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CNKI学位论文(3305)
CNKI期刊论文0611(3)
知网期刊论文(379)
在“
Elsevier电子期刊
”中,
命中:
121
条,耗时:0.1869096 秒
在所有数据库中总计命中:
3,687
条
1.
Performance investigation of bandgap,
gate
material
work
function
and
gate
dielectric engineered TFET with device reliability improvement
作者:
Bhagwan Ram Raad
;
bhagwanramraad@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Kaushal Nigam
kaushalnigam3@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Dheeraj Sharma
dheeraj24482@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
P.N. Kondekar
pnkondekar@iiitdmj.ac.in" class="auth_mail" title="E-mail the corresponding author
关键词:
Band to band tunneling (BTBT)
;
Bandgap
engineering
;
Gate
material
work
function
engineering
;
Gate
dielectric
engineering
刊名:Superlattices and Microstructures
出版年:2016
2.
Development of Field Programmable
Gate
Array-based Reactor Trip
Function
s Using Systems
Engineering
Approach
作者:
Jaecheon Jung
;
jcjung@kings.ac.kr" class="auth_mail" title="E-mail the corresponding author
;
Ibrahim Ahmed
关键词:
Field Programmable
Gate
Array
;
Finite State Machine with Data Path
;
Reactor Trip
Function
s
;
Systems
Engineering
刊名:Nuclear
Engineering
and Technology
出版年:2016
3.
A novel
gate
and drain engineered charge plasma tunnel field-effect transistor for low sub-threshold swing and ambipolar nature
作者:
Dharmendra Singh Yadav
tech.dharmendra26@gmail.com
;
Bhagwan Ram Raad
;
bhagwanramraad@gmail.com
;
Dheeraj Sharma
dheeraj24482@gmail.com
关键词:
Ambipolar conduction
;
Charge plasma
;
Sub-threshold swing
;
Gate
to drain capacitance
;
Work
function
engineering
刊名:Superlattices and Microstructures
出版年:2016
4.
QoS-aware multi-plane routing method for OSPF-based IP access net
work
s
作者:
Alexandre Jaron
;
alexandre.jaron@kcl.ac.uk" class="auth_mail" title="E-mail the corresponding author
Author Vitae
;
Andrej MihailovicAuthor Vitae
;
A.H. Aghvami
1
Author Vitae
关键词:
Multi-plane routing
;
Traffic
engineering
;
Open Shortest Path First
;
Access net
work
s
;
Routing
刊名:Computer Net
work
s
出版年:2016
5.
Hardware design and implementation of a novel ANN-based chaotic generator in FPGA
作者:
Murat Alç
;
ın
a
;
muratalcin@anadolu.edu.tr" class="auth_mail" title="E-mail the corresponding author
;
İhsan Pehlivan
b
;
ipehlivan@sakarya.edu.tr" class="auth_mail" title="E-mail the corresponding author
;
İsmail Koyuncu
c
;
ismailkoyuncu@duzce.edu.tr" class="auth_mail" title="E-mail the corresponding author
关键词:
Artificial Neural Net
work
s
;
VHDL
;
Field Programmable
Gate
Arrays
;
Chaotic systems
刊名:Optik - International Journal for Light and Electron Optics
出版年:2016
6.
Engineering
neural systems for high-level problem solving
作者:
Jared Sylvester
jared@jsylvest.com" class="auth_mail" title="E-mail the corresponding author
;
James Reggia
;
reggia@cs.umd.edu" class="auth_mail" title="E-mail the corresponding author
关键词:
Neuro
engineering
;
Attractor neural net
work
s
;
Gate
d neural net
work
s
;
Top-down vs. bottom-up AI
;
Neural net
work
problem solving
刊名:Neural Net
work
s
出版年:2016
7.
Influence of
gate
overlap
engineering
on ambipolar and high frequency characteristics of tunnel-CNTFET
作者:
Ahmed Shaker
a
;
Mahmoud Ossaimee
a
;
m_ossaimee@yahoo.com" class="auth_mail" title="E-mail the corresponding author
;
A. Zekry
b
;
Mohamed Abouelatta
b
关键词:
T-CNTFET
;
Gate
overlapping
;
Band-to-band-tunneling (BTBT)
;
Subthreshold swing (SS)
;
Unit-gain cutoff frequency (fT)
刊名:Superlattices and Microstructures
出版年:2015
8.
Investigating doping effects on high-¦Ê metal
gate
stack for effective
work
function
engineering
作者:
C. Leroux
;
S. Baudot
;
M. Charbonnier
;
A. Van Der Geest
;
P. Caubet
;
A. Toffoli
;
Ph. Blaise
;
G. Ghibaudo
;
F. Martin
;
G. Reimbold
关键词:
High-k
;
Metal
gate
;
Work
function
;
CV
;
Roll-off
;
Internal photon emission
刊名:Solid-State Electronics
出版年:2013
9.
Low-power DRAM-compatible Replacement
Gate
High-k/Metal Gate Stacks
作者:
R. Ritzenthaler
a
;
romain.ritzenthaler@imec.be
;
T. Schram
a
;
E. Bury
a
;
c
;
A. Spessot
b
;
C. Caillat
b
;
V. Srividya
b
;
F. Sebaai
a
;
J. Mitard
a
;
L.-Å
;
. Ragnarsson
a
;
G. Groeseneken
a
;
c
;
N. Horiguchi
a
;
P. Fazan
b
;
A. Thean
a
关键词:
DRAM periphery transistors
;
RMG (Replacement Metal
Gate
)
;
Work
Function
Engineering
刊名:Solid-State Electronics
出版年:2013
10.
Gate
-last integration on planar FDSOI for low-V
Tp
and low-EOT MOSFETs
作者:
S. Morvan
a
;
simeon.morvan@cea.fr
;
F. Andrieu
a
;
C. Leroux
a
;
X. Garros
a
;
M. Cassé
;
a
;
F. Martin
a
;
R. Gassilloud
a
;
Y. Morand
b
;
C. Le Royer
a
;
P. Besson
b
;
M.-C. Roure
a
;
C. Euvrard
a
;
M. Rivoire
b
;
A. Seignard
a
;
L. Desvoivres
a
;
S. Barnola
a
;
N. Allouti
a
;
P. Caubet
b
;
U. Weber
c
;
P.K. Baumann
c
;
O. Weber
a
;
L. Tosti
a
;
P. Perreau
a
;
F. Ponthenier
a
;
G. Ghibaudo
d
;
T. Poiroux
a
关键词:
MOSFET
;
SOI
;
Replacement
gate
;
EOT
;
Metal
gate
work
function
刊名:Microelectronic
Engineering
出版年:2013
1
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