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在“
Elsevier电子期刊
”中,
命中:
75
条,耗时:0.0390158 秒
在所有数据库中总计命中:
551
条
1.
Estimation of
HF
artificial ionospheric turbulence characteristics using comparison of calculated plasma wave decay rates with the measured decay rates of the stimulated electromagnetic emission
作者:
D.D. Bareev
;
V.G. Gavrilenko
;
S.M. Grach
;
sgrach@rf.unn.ru" class="auth_mail" title="E-mail the corresponding author
;
E.N. Sergeev
1
关键词:
Ionosphere
;
HF
pumping
;
Stimulated electromagnetic emission
;
Plasma waves
;
Damping rate
刊名:Advances in Space Research
出版年:2016
2.
Modification of the high latitude ionosphere F region by X-mode powerful
HF
radio waves: Experimental results from multi-instrument diagnostics
作者:
N.F. Blagoveshchenskaya
a
;
nataly@aari.nw.ru" class="auth_mail" title="E-mail the corresponding author
;
T.D. Borisova
a
;
T.K. Yeoman
b
;
I. Hä
;
ggströ
;
m
c
;
A.S. Kalishin
a
关键词:
Ionosphere (active experiments)
;
Radio Science (nonlinear phenomena)
刊名:Journal of Atmospheric and Solar-Terrestrial Physics
出版年:2015
3.
Pumping
properties of Ti-Zr-
Hf
-V non-evaporable getter coating
作者:
O.B. Malyshev
;
R. Valizadeh
;
A.N. Hannah
关键词:
Non-evaporable getter (NEG)
;
Coating
;
Activation
;
Pumping
;
Sticking probability
刊名:Vacuum
出版年:2014
4.
Stress induced defect generation implications of doping
Hf
O
2
with Al
作者:
R. O&rsquo
;
Connor
a
;
robert.p.oconnor@dcu.ie
;
T. Kauerauf
b
;
H. Arimura
b
;
c
;
L.A. Ragnarsson
b
关键词:
High-k
;
Mosfet
;
TDDB
;
Silc
刊名:Microelectronic Engineering
出版年:2013
5.
A comparative study of depth profiling of interface states using charge
pumping
and low frequency noise measurement in SiO
2
/
Hf
O
2
gate stack nMOSFETs
作者:
Kyong Taek
;
Lee
a
;
Chang Yong
;
Kang
b
;
Hyun-Sik
;
Choi
a
;
Seung-Ho
;
Hong
a
;
Gil-Bok
;
Choi
a
;
Jae Chul
;
Kim
a
;
Seung-Hyun
;
Song
a
;
Rock-Hyun
;
Baek
a
;
Min-Sang
;
Park
a
;
Hyun Chul
;
Sagong
a
;
Byoung Hun
;
Lee
b
;
Gennadi
;
Bersuker
b
;
Hsing-Huang
;
Tseng
b
;
Raj
;
Jammy
b
;
Yoon-Ha
;
Jeong
a
;
;
yhjeong@postech.ac.kr
关键词:
Low frequency noise
;
Charge
pumping
;
Hf
O
2
/SiO
2
gate stack
;
HCI
;
PBTI
刊名:Microelectronic Engineering
出版年:2011
6.
Investigation of spatial and energetic trap distributions in 1 nm EOT SiO
2
/
Hf
O
2
by discharging-sweep mode amplitude charge
pumping
作者:
Eun-Ae Chung
a
;
d
;
Kab-Jin Nam
a
;
Young-Pil Kim
a
;
Ji-Young Min
a
;
Moonju Cho
b
;
Hyungseok Hong
a
;
Jeong Han
a
;
Jae-Duk Lee
c
;
Yu-Gyun Shin
a
;
Siyoung Choi
a
;
Sangsig Kim
d
;
sangsig@korea.ac.kr"" rel=""nofollow
关键词:
Charge de-trapping
;
High-k gate stack
;
Trap profile
;
Charge
pumping
;
MOSFET
刊名:Solid State Sciences
出版年:2011
7.
Effect of coating morphology on the electron stimulated desorption from Ti-Zr-
Hf
-V nonevaporable-getter-coated stainless steel
作者:
O.B. Malyshev
;
R. Valizadeh
;
R.M.A. Jones
;
A. Hannah
关键词:
Electron stimulated desorption
;
Non-evaporable getter (NEG)
;
Coating
;
Activation
;
Pumping
刊名:Vacuum
出版年:2012
8.
Detailed analysis of charge
pumping
and I
d
V
g
hysteresis for profiling traps in SiO
2
/
Hf
SiO(N)
作者:
S. Sahhaf
;
R. Degraeve
;
M. Cho
;
K. De Brabanter
;
Ph.J. Roussel
;
M.B. Zahid
;
G. Groeseneken
关键词:
Charge
pumping
;
Hf
SiO(N)
;
Energy and spatial distribution of traps
刊名:Microelectronic Engineering
出版年:2010
9.
Comparison of positive and negative bias-temperature instability on MOSFETs with
Hf
O
2
/LaO
x
and HfO
2
/AlO
x
dielectric stacks
作者:
Chun-Chang Lu
;
Kuei-Shu Chang-Liao
;
Che-Hao Tsao
;
Tien-Ko Wang
关键词:
Charge
pumping
;
High-κ
;
Trap generation
;
BTI
;
MOS device
刊名:Solid-State Electronics
出版年:2010
10.
On-chip two-phase cooling of datacenters: Cooling system and energy recovery evaluation
作者:
Jackson Braz Marcinichen
;
jackson.marcinichen@epfl.ch
;
Jonathan Albert Olivier
;
John Richard Thome
关键词:
Datacenter
;
Microprocessor
;
Hybrid two-phase cooling cycle
;
Micro-evaporator
;
Power plant
;
Energy recovery
刊名:Applied Thermal Engineering
出版年:2012
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