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内部出版物
CNKI学位论文(41)
知网期刊论文(73)
在“
Elsevier电子期刊
”中,
命中:
55
条,耗时:小于0.01 秒
在所有数据库中总计命中:
114
条
1.
Process modules for GeSn nanoelectronics with
high
Sn-contents
作者:
C. Schulte-Braucks
a
;
c.schulte-Braucks@fz-juelich.de
;
S. Glass
a
;
E. Hofmann
a
;
D. Stange
a
;
N. von den Driesch
a
;
J.M. Hartmann
b
;
c
;
Z. Ikonic
d
;
Q.T. Zhao
a
;
D. Buca
a
;
S. Mantl
a
关键词:
GeSn
;
MOSFET
;
High
-k/metal
gate
;
NiGeSn
刊名:Solid-State Electronics
出版年:2017
2.
Investigation of low-frequency noise of 28-nm technology process of
high
-k/metal
gate
p-MOSFETs with fluorine incorporation
作者:
Tsung-Hsien Kao
a
;
Shoou-Jinn Chang
a
;
changsj@mail.ncku.edu.tw" class="auth_mail" title="E-mail the corresponding author
;
Yean-Kuen Fang
a
;
Po-Chin Huang
a
;
Bo-Chin Wang
a
;
Chung-Yi Wu
b
;
San-Lein Wu
b
关键词:
Random telegraph noise (RTN)
;
High
-k/metal
gate
(HK/MG)
;
Fluorine incorporation
刊名:Solid State Electronics
出版年:2016
3.
Analytical modeling and numerical simulation of novel double-
gate
InGaAs vertical nanowire transistor device for threshold voltage tuning and improved performance
作者:
Subha Subramaniam
a
;
b
;
subha.sakec@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Sangeeta M. Joshi
c
;
R.N. Awale
a
关键词:
Vertical nanowire
;
DG-VNWT
;
High
-k
gate
stack
;
Leakage current
;
Analytical model
刊名:Engineering Science and Technology,an International Journal
出版年:2016
4.
Process optimizations to recessed e-SiGe source/drain for performance enhancement in 22 nm all-last
high
-k/metal-
gate
pMOSFETs
作者:
Changliang Qin
a
;
Guilei Wang
a
;
Peizhen Hong
a
;
Jinbiao Liu
a
;
Huaxiang Yin
a
;
yinhuaxiang@ime.ac.cn" class="auth_mail" title="E-mail the corresponding author
;
Haizhou Yin
a
;
Xiaolong Ma
a
;
Hushan Cui
a
;
Yihong Lu
a
;
Lingkuan Meng
a
;
Jinjuan Xiang
a
;
Huicai Zhong
a
;
Huilong Zhu
a
;
Qiuxia Xu
a
;
Junfeng Li
a
;
Jian Yan
a
;
Chao Zhao
a
;
Henry H. Radamson
b
关键词:
Mosfet
;
SiGe
;
Source/drain recess
;
Epitaxy
;
Source/drain extension implant
;
22
;
nm node
刊名:Solid State Electronics
出版年:2016
5.
Effect of Halo structure variations on the threshold voltage of a 22 nm
gate
length NMOS transistor
作者:
A.H. Afifah Maheran
;
P.S. Menon
;
I. Ahmad
;
S. Shaari
关键词:
22
;
nm
Gate
length
;
NMOS
;
High
-k/metal
gate
;
Silvaco
;
Taguchi method
刊名:Materials Science in Semiconductor Processing
出版年:January, 2014
6.
Low-power DRAM-compatible Replacement
Gate
High
-k/Metal Gate Stacks
作者:
R. Ritzenthaler
a
;
romain.ritzenthaler@imec.be
;
T. Schram
a
;
E. Bury
a
;
c
;
A. Spessot
b
;
C. Caillat
b
;
V. Srividya
b
;
F. Sebaai
a
;
J. Mitard
a
;
L.-Å
;
. Ragnarsson
a
;
G. Groeseneken
a
;
c
;
N. Horiguchi
a
;
P. Fazan
b
;
A. Thean
a
关键词:
DRAM periphery transistors
;
RMG (Replacement Metal
Gate
)
;
Work Function Engineering
刊名:Solid-State Electronics
出版年:2013
7.
Electrical characterization of thulium silicate interfacial layers for integration in
high
-k/metal
gate
CMOS technology
作者:
Eugenio Dentoni Litta
;
eudl@kth.se" class="auth_mail
;
Per-Erik Hellströ
m ;
Christoph Henkel
1
;
Mikael Ö
;
stling
关键词:
TmSiO
;
LaSiO
;
Silicate
;
Interfacial layer
;
High
-k
刊名:Solid-State Electronics
出版年:August 2014
8.
Atom probe tomography for advanced metallization
作者:
D. Mangelinck
a
;
dominique.mangelinck@im2np.fr" class="auth_mail
;
F. Panciera
a
;
b
;
K. Hoummada
a
;
M. El Kousseifi
a
;
C. Perrin
a
;
M. Descoins
a
;
A. Portavoce
a
关键词:
Atom probe tomography
;
Metallization
;
Ni silicide
;
High
K/metal
gate
;
Nanowire
;
Transistor
刊名:Microelectronic Engineering
出版年:25 May, 2014
9.
Backside medium energy ion scattering study of the lanthanum diffusion in advanced
gate
stacks for the 32 nm node
作者:
F. Pierre
;
D. Jalabert
;
R. Boujamaa
;
M. Py
;
J.P. Barnes
;
F. Bertin
关键词:
High
-k/metal
gate
stack
;
Threshold voltage tuning
;
LaOx capping layer
;
Lanthanum diffusion
;
Backside preparation and analysis
;
MEIS
刊名:Microelectronic Engineering
出版年:2013
10.
The impact of interface/border defect on performance and reliability of
high
-k/metal-
gate
CMOSFET
作者:
Wen-Kuan Yeh
a
;
wkyeh@nuk.edu.tw
;
Po-Ying Chen
b
;
Kwang-Jow Gan
c
;
Jer-Chyi Wang
d
;
Chao Sung Lai
d
刊名:Microelectronics Reliability
出版年:2013
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