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内部出版物
知网期刊论文(8)
在“
Elsevier电子期刊
”中,
命中:
7
条,耗时:小于0.01 秒
在所有数据库中总计命中:
8
条
1.
Investigation of low-frequency noise of 28-nm technology process of
high
-k/metal
gate
p-MOSFETs with fluorine incorporation
作者:
Tsung-Hsien Kao
a
;
Shoou-Jinn Chang
a
;
changsj@mail.ncku.edu.tw" class="auth_mail" title="E-mail the corresponding author
;
Yean-Kuen Fang
a
;
Po-Chin Huang
a
;
Bo-Chin Wang
a
;
Chung-Yi Wu
b
;
San-Lein Wu
b
关键词:
Random telegraph noise (RTN)
;
High
-k/metal
gate
(HK/MG)
;
Fluorine incorporation
刊名:Solid State Electronics
出版年:2016
2.
Process optimizations to recessed e-SiGe source/drain for performance enhancement in 22 nm all-last
high
-k/metal-
gate
pMOSFETs
作者:
Changliang Qin
a
;
Guilei Wang
a
;
Peizhen Hong
a
;
Jinbiao Liu
a
;
Huaxiang Yin
a
;
yinhuaxiang@ime.ac.cn" class="auth_mail" title="E-mail the corresponding author
;
Haizhou Yin
a
;
Xiaolong Ma
a
;
Hushan Cui
a
;
Yihong Lu
a
;
Lingkuan Meng
a
;
Jinjuan Xiang
a
;
Huicai Zhong
a
;
Huilong Zhu
a
;
Qiuxia Xu
a
;
Junfeng Li
a
;
Jian Yan
a
;
Chao Zhao
a
;
Henry H. Radamson
b
关键词:
Mosfet
;
SiGe
;
Source/drain recess
;
Epitaxy
;
Source/drain extension implant
;
22
;
nm node
刊名:Solid State Electronics
出版年:2016
3.
Low-power DRAM-compatible Replacement
Gate
High
-k/Metal Gate Stacks
作者:
R. Ritzenthaler
a
;
romain.ritzenthaler@imec.be
;
T. Schram
a
;
E. Bury
a
;
c
;
A. Spessot
b
;
C. Caillat
b
;
V. Srividya
b
;
F. Sebaai
a
;
J. Mitard
a
;
L.-Å
;
. Ragnarsson
a
;
G. Groeseneken
a
;
c
;
N. Horiguchi
a
;
P. Fazan
b
;
A. Thean
a
关键词:
DRAM periphery transistors
;
RMG (Replacement Metal
Gate
)
;
Work Function Engineering
刊名:Solid-State Electronics
出版年:2013
4.
Analysis of USJ formation with combined RTA/laser annealing conditions for 28 nm
high
-k/metal
gate
CMOS technology using advanced TCAD for process and device simulation
作者:
E.M. Bazizi
a
;
elmehdibazizi@globalfoundries.com
;
A. Zaka
a
;
F. Benistant
b
关键词:
28
;
nm
HKMG
;
Spike
;
Laser
;
Implantation
;
Activation
;
Simulation
刊名:Solid-State Electronics
出版年:2013
5.
Substrate dependent mobility and strain effects for silicon and SiGe transistor channels with
HKMG
first stacks
作者:
S. Flachowsky
;
T. Herrmann
;
J. H?ntschel
;
R. Illgen
;
S.Y. Ong
;
M. Wiatr
关键词:
CMOS
;
Mobility enhancement
;
SiGe channel
;
Strained silicon
;
Stress
;
Substrate orientation
刊名:Solid-State Electronics
出版年:2013
6.
Characterization of
high
-K/metal
gate
using picosecond ultrasonics
作者:
D.B. Hsieh
a
;
T.C. Tsai
a
;
S.F. Huang
a
;
Y.R. Yang
a
;
C.L. Yang
a
;
J.Y. Wu
a
;
J. Dai
b
;
Johnny.Dai@Rudolphtech.com
;
J. Chen
c
;
J. Tan
c
;
P. Mukundhan
b
关键词:
Picosecond ultrasonics
;
HKMG
;
CMP
;
Thickness
;
Edge profile
刊名:Microelectronic Engineering
出版年:2011
7.
The progress and challenges of threshold voltage control of
high
-k
作者:
Hsing-Huang Tseng
;
Paul Kirsch
;
C.S. Park
;
Gennadi Bersuker
;
Prashant Majhi
;
Muhammad Hussain
;
Raj Jammy
关键词:
High
-
k
;
Metal
gate
;
Threshold voltage control
;
Capping layer
;
CMOS
;
EOT
刊名:Microelectronic Engineering
出版年:2009
1
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