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CNKI期刊论文0611(1)
在“
Elsevier电子期刊
”中,
命中:
906
条,耗时:0.0129938 秒
在所有数据库中总计命中:
3,615
条
1.
Effect of spacer dielectric engineering on Asymmetric Source Underlapped Double
Gate
MOSFET using Gate
Stack
作者:
Ankush Chattopadhyay
b
;
Arpan Dasgupta
b
;
arpan24470367@gmail.com
;
Rahul Das
b
;
Atanu Kundu
a
;
Chandan K. Sarkar
b
关键词:
Source underlap
;
Gate
Stack
;
Analog and RF analysis
;
Non Quasi Static
;
Single stage amplifier
刊名:Superlattices and Microstructures
出版年:2017
2.
Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge
gate
stack
s by nitrogen incorporation
作者:
J. Gao
a
;
b
;
G. He
a
;
ganghe01@issp.ac.cn
;
Z.B. Fang
c
;
csfzb@usx.edu.cn
;
J.G. Lv
d
;
jglv@hftc.edu.cn
;
M. Liu
e
;
Z.Q. Sun
a
关键词:
High
-k
gate
dielectrics
;
Interface quality
;
Band alignment
;
Electrical properties
;
Leakage current mechanism
刊名:Journal of Alloys and Compounds
出版年:2017
3.
Two methods of tuning threshold voltage of bulk FinFETs with replacement
high
-k metal-
gate
stack
s
作者:
Miao Xu
a
;
b
;
Huilong Zhu
a
;
zhuhuilong@ime.ac.cn
;
Yanbo Zhang
a
;
zhangyanbo@ime.ac.cn
;
Qiuxia Xu
a
;
Yongkui Zhang
a
;
Changliang Qin
a
;
b
;
Qingzhu Zhang
a
;
b
;
Huaxiang Yin
a
;
b
;
Hao Xu
a
;
b
;
Shuai Chen
a
;
Jun Luo
a
;
b
;
Chunlong Li
a
;
Chao Zhao
a
;
b
;
Tianchun Ye
a
;
b
关键词:
FinFET
;
Halo
;
Work function
;
Punch through stop pocket
;
Threshold voltage
;
High
k metal
gate
刊名:Solid-State Electronics
出版年:2017
4.
Reliable
gate
stack
and substrate parameter extraction based on C-V measurements for 14 nm node FDSOI technology
作者:
B. Mohamad
a
;
b
;
blend.mohamad@cea.fr
;
C. Leroux
a
;
D. Rideau
c
;
M. Haond
c
;
G. Reimbold
a
;
G. Ghibaudo
b
关键词:
Effective work function
;
Equivalent oxide thickness
;
Channel thickness
;
Buried oxide thickness
;
Fully depleted silicon on insulator
刊名:Solid-State Electronics
出版年:2017
5.
Depth profiling investigation by pARXPS and MEIS of advanced transistor technology
gate
stack
作者:
L. Fauquier
a
;
b
;
c
;
laurent.fauquier@st.com
;
B. Pelissier
b
;
c
;
D. Jalabert
b
;
d
;
F. Pierre
b
;
e
;
R. Gassilloud
b
;
e
;
D. Doloy
a
;
C. Beitia
b
;
e
;
T. Baron
b
;
c
关键词:
Depth profiling
;
pARXPS
;
MEIS
;
HfON
;
SiON
;
HKMG
刊名:Microelectronic Engineering
出版年:2017
6.
Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al
2
O
3
/Si
gate
stack
by annealing temperature
作者:
J. Gao
a
;
b
;
G. He
a
;
ganghe01@issp.ac.cn" class="auth_mail" title="E-mail the corresponding author
;
M. Liu
c
;
mliu@issp.ac.cn" class="auth_mail" title="E-mail the corresponding author
;
J.G. Lv
d
;
jglv@hftc.edu.cn" class="auth_mail" title="E-mail the corresponding author
;
Z.Q. Sun
a
;
C.Y. Zheng
a
;
P. Jin
a
;
D.Q. Xiao
a
;
X.S. Chen
e
关键词:
High
-k dielectric
;
Interface thermal stability
;
Atomic-layer-deposition
;
Band alignment
;
Electrical properties
;
Leakage current mechanism
刊名:Journal of Alloys and Compounds
出版年:2017
7.
Monitoring of vancomycin in human plasma via portable microchip electrophoresis with contactless conductivity detector and multi-
stack
ing strategy
作者:
Kah Chun Chong
a
;
b
;
Lee Yien Thang
a
;
b
;
Joselito P. Quirino
c
;
d
;
jquirino@utas.edu.au
;
Hong Heng See
a
;
b
;
hhsee@ibnusina.utm.my
;
hhsee@utm.my
关键词:
Micelle-to-solvent
stack
ing
;
Field-enhance sample injection
;
Microchip electrophoresis
;
Vancomycin
;
Contactless conductivity detection
刊名:Journal of Chromatography A
出版年:2017
8.
Reconfigurable ultra-thin film GDNMOS device for ESD protection in 28 nm FD-SOI technology
作者:
Sotirios Athanasiou
a
;
b
;
athanasiou.sotiris@gmail.com
;
Charles-Alexandre Legrand
a
;
Sorin Cristoloveanu
b
;
Philippe Galy
a
关键词:
CMOS
;
Electrostatic discharges
;
ESD
;
FD-SOI
;
Gate
d diode
;
LBJT
;
MOSFET
;
SOI
;
Thyristor
刊名:Solid-State Electronics
出版年:2017
9.
Optimization of
high
-k and
gate
metal workfunction for improved analog and intermodulation performance of Gate
Stack
(GS)-GEWE-SiNW MOSFET
作者:
Neha Gupta
nehagupta@dtu.ac.in" class="auth_mail" title="E-mail the corresponding author
;
Rishu Chaujar
;
rishu.phy@dce.edu" class="auth_mail" title="E-mail the corresponding author
关键词:
Gate
stack
;
Gate
electrode workfunction engineering
;
Analog
;
Linearity
;
Harmonic distortion
;
Silicon nanowire
刊名:Superlattices and Microstructures
出版年:2016
10.
Process modules for GeSn nanoelectronics with
high
Sn-contents
作者:
C. Schulte-Braucks
a
;
c.schulte-Braucks@fz-juelich.de
;
S. Glass
a
;
E. Hofmann
a
;
D. Stange
a
;
N. von den Driesch
a
;
J.M. Hartmann
b
;
c
;
Z. Ikonic
d
;
Q.T. Zhao
a
;
D. Buca
a
;
S. Mantl
a
关键词:
GeSn
;
MOSFET
;
High
-k/metal
gate
;
NiGeSn
刊名:Solid-State Electronics
出版年:2017
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