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在“
Elsevier电子期刊
”中,
命中:
27
条,耗时:小于0.01 秒
1.
Resistive switching behaviors of Ti nano-layer embedded TaO
x
-based devices
作者:
Heeyoung Jeon
a
;
Jingyu Park
a
;
Woochool Jang
b
;
Hyunjung Kim
a
;
Kunyoung Lee
b
;
Changhee Shin
a
;
Jaemin Lee
a
;
Hyeongtag
Jeon
a
;
b
;
hjeon@hanyang.ac.kr
关键词:
Resistive switching
;
Interface
;
TaOx
;
Non-linear
;
Current compliance
刊名:Current Applied Physics
出版年:2017
2.
Investigation of ultrathin Pt/ZrO
2
-Al
2
O
3
-ZrO
2
/TiN DRAM capacitors Schottky barrier height by internal photoemission spectroscopy
作者:
Sang Yeon Lee
a
;
Jaewan Chang
b
;
Jaehyung Choi
b
;
Younsoo Kim
b
;
HanJin Lim
b
;
Hyeongtag
Jeon
c
;
hjeon@hanyang.ac.kr
;
Hyungtak Seo
a
;
d
;
hseo@ajou.ac.kr
关键词:
MIM capacitor
;
Internal photoemission spectroscopy
;
Schottky barrier height
刊名:Current Applied Physics
出版年:2017
3.
The effect of ozone concentration during atomic layer deposition on the properties of ZrO
2
films for capacitor applications
作者:
Hyoseok Song
a
;
Heeyoung Jeon
b
;
Changhee Shin
b
;
Seokyoon Shin
a
;
Woochool Jang
a
;
Joohyun Park
b
;
Jaewan Chang
c
;
Jae Hyoung Choi
c
;
Younsoo Kim
c
;
HanJin Lim
c
;
Hyungtak Seo
d
;
e
;
hseo@ajou.ac.kr
;
Hyeongtag
Jeon
a
;
hjeon@hanyang.ac.kr
关键词:
Dynamic random access memory
;
Atomic layer deposition
;
High-κ dielectrics
;
Zirconia
;
ZrO2
;
Oxygen vacancyκ
刊名:Thin Solid Films
出版年:2016
4.
Characteristics of Al
2
O
3
/ZrO
2
laminated films deposited by ozone-based atomic layer deposition for organic device encapsulation
作者:
Juhong Oh
a
;
Seokyoon Shin
a
;
Joohyun Park
b
;
Giyul Ham
a
;
Hyeongtag
Jeon
a
;
hjeon@hanyang.ac.kr" class="auth_mail" title="E-mail the corresponding author
关键词:
Thin film encapsulation
;
Ozone
;
Atomic layer deposition
;
Al2O3
;
ZrO2
;
Laminated films
;
WVTR
刊名:Thin Solid Films
出版年:2016
5.
Resistive switching behaviors of Cu/TaO
x
/TiN device with combined oxygen vacancy/copper conductive filaments
作者:
Heeyoung Jeon
a
;
Jingyu Park
a
;
Woochool Jang
b
;
Hyunjung Kim
a
;
Hyoseok Song
b
;
Honggi Kim
a
;
Hyungtak Seo
c
;
hseo@ajou.ac.kr" class="auth_mail" title="E-mail the corresponding author
;
Hyeongtag
Jeon
b
;
hjeon@hanyang.ac.kr" class="auth_mail" title="E-mail the corresponding author
关键词:
RRAM
;
CBRAM
;
Resistive switching
;
TaOx
;
Conductive filament
刊名:Current Applied Physics
出版年:2015
6.
Permeation barrier properties of an Al
2
O
3
/ZrO
2
multilayer deposited by remote plasma atomic layer deposition
作者:
Sanghun Lee
a
;
Hagyoung Choi
a
;
Seokyoon Shin
a
;
Joohyun Park
b
;
Giyul Ham
a
;
Hyunsoo Jung
a
;
c
;
Hyeongtag
Jeon
a
;
hjeon@hanyang.ac.kr" class="auth_mail
关键词:
Remote plasma atomic layer deposition
;
Encapsulation
;
Al2O3
;
ZrO2
刊名:Current Applied Physics
出版年:April, 2014
7.
Detection of oxygen ion drift in Pt/Al
2
O
3
/TiO
2
/Pt RRAM using interface-free single-layer graphene electrodes
作者:
Heeyoung Jeon
a
;
Jingyu Park
a
;
Woochool Jang
b
;
Hyunjung Kim
a
;
Seungbae Ahn
c
;
Ki-Joon Jeon
c
;
Hyungtak Seo
d
;
hseo@ajou.ac.kr" class="auth_mail
;
Hyeongtag
Jeon
a
;
b
;
hjeon@hanyang.ac.kr" class="auth_mail
刊名:Carbon
出版年:August 2014
8.
Gadolinium nitride films deposited using a PEALD based process
作者:
Ziwen Fang
a
;
Paul A. Williams
b
;
Rajesh Odedra
b
;
Hyeongtag
Jeon
c
;
Richard J. Potter
a
;
rjpott@liverpool.ac.uk
关键词:
A1. Auger electron spectroscopy
;
A1. Medium energy ion scattering
;
A3. Atomic layer deposition
;
B1. Gadolinium compounds
;
B1. Nitrides
;
B2. Magnetic materials
刊名:Journal of Crystal Growth
出版年:2012
9.
Luminescent mechanism of Eu
3+
-doped epitaxial Gd
2
O
3
films grown on a Si (111) substrate using an effusion cell
作者:
Moon Hyung Jang
a
;
1
;
Yoon Ki Choi
b
;
Kwun Bum Chung
c
;
Hyeongtag
Jeon
d
;
Mann-Ho Cho
a
;
mh.cho@yonsei.ac.kr"" rel=""nofollow
关键词:
Rare-earth phosphor
;
Gd
2
O
3
;
Eu
3+
;
Luminescent mechanism
刊名:Current Applied Physics
出版年:2011
10.
The effects of post-annealing on the performance of ZnO thin film transistors
作者:
Seokhwan Bang
a
;
Seungjun Lee
a
;
Joohyun Park
a
;
Soyeon Park
a
;
Youngbin Ko
a
;
Changhwan Choi
a
;
Hojung Chang
b
;
Hyungho Park
c
;
Hyeongtag
Jeon
a
;
;
hjeon@hanyang.ac.kr
关键词:
Atomic layer deposition
;
Zinc oxide
;
Thin film transistor
;
Annealing
刊名:Thin Solid Films
出版年:2011
1
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