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在“Elsevier电子期刊”中，命中：1,664条，耗时：0.1909095 秒

在所有数据库中总计命中：1,543条

1.Monte Carlo simulation of the kinetic effects on GaAs/GaAs(001) MBE growth

作者：Oleg A. Ageev ; Maxim S. Solodovnik ; ^{solodovnikms@sfedu.ru} ; Sergey V. Balakirev ; Ilya A. Mikhaylin ; Mikhail M. Eremenko

关键词：A1. Computer simulation ; A1. Surface processes ; A3. Molecular beam epitaxy ; B2. Semiconducting III&ndash ; V materials

刊名：Journal of Crystal Growth

出版年：2017

2.Tuning the growth for a selective nucleation of chains of Quantum Dots behaving as single photon emitters

作者：V. Latini^a ; E. Tisbi^a ; E. Placidi^a ; ^b ; ^{ernesto.placidi@ism.cnr.it} ; F. Patella^a ; F. Biccari^c ; M. Gurioli^c ; A. Vinattieri^c ; F. Arciprete^a

关键词：A1. Low dimensional structures ; A3. Molecular Beam Epitaxy ; A3. Selective epitaxy ; B2. Semiconducting III&ndash ; V materials

刊名：Journal of Crystal Growth

出版年：2017

3.Semipolar AlN and GaN on Si(100): HVPE technology and layer properties

作者：V. Bessolov^a ; A. Kalmykov^a ; E. Konenkova^a ; ^{lena@triat.ioffe.rssi.ru} ; S. Kukushkin^b ; A. Myasoedov^a ; N. Poletaev^a ; S. Rodin^a

关键词：B1. Silicon ; B1. Silicon carbide ; B2. Semiconducting III&ndash ; V materials ; A3. Hydride vapor phase epitaxy

刊名：Journal of Crystal Growth

出版年：2017

4.A RHEED/MBE-STM investigation of the static and dynamic InAs(001) surface

作者：J.J. Bomphrey ; ^{J.J.Bomphrey@Warwick.ac.uk} ; M.J. Ashwin ; T.S. Jones

关键词：Reflection high energy electron diffraction ; Molecular beam epitaxy ; Arsenides ; Semiconducting III-V materials

刊名：Journal of Crystal Growth

出版年：2017

5.Miscut dependent surface evolution in the process of N-polar growth under N-rich condition

作者：Filip Krzyżewski^a ; ^{fkrzy@ifpan.edu.pl} ; Magdalena A. Załuska-Kotur^a ; ^b ; ^{zalum@ifpan.edu.pl} ; Henryk Turski^c ; Marta Sawicka^c ; Czesław Skierbiszewski^c

关键词：A1. Diffusion ; A1. Growth models ; A1. Surface structure ; A3. Molecular beam epitaxy ; B1. Nitrides ; B2. Semiconducting III&ndash ; V materials

刊名：Journal of Crystal Growth

出版年：2017

6.Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing

作者：Maud Nemoz^a ; ^{mn@crhea.cnrs.fr} ; Roy Dagher^a ; Samuel Matta^a ; ^b ; Adrien Michon^a ; Philippe Venné ; gu&egrave ; s^a ; Julien Brault^a

关键词：B1. Nitrides ; B2. Semiconducting III-V materials ; A3. Molecular beam epitaxy ; A1. X-ray diffraction ; A1. Atomic force microscopy

刊名：Journal of Crystal Growth

出版年：2017

7.Fe-doped semi-insulating GaN with solid Fe source grown on (110) Si substrates by NH₃ molecular beam epitaxy

作者：Young Kyun Noh^a ; ^c ; ^{young.k.noh@gmail.com} ; Sang Tae Lee^b ; Moon Deock Kim^b ; Jae Eung Oh^a

关键词：A1.Characterization ; A1.Doping ; A3.Molecular beam epitaxy ; B1.Nitrides ; B2.Semiconducting III-V materials ; B3. Heterojunction semiconductor devices

刊名：Journal of Crystal Growth

出版年：2017

8.The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device

作者：Lian Ji^a ; ^b ; Ming Tan^b ; Chao Ding^a ; Kazuki Honda^c ; Ryo Harasawa^c ; Yuya Yasue^c ; Yuanyuan Wu^b ; Pan Dai^b ; Atsushi Tackeuchi^c ; Lifeng Bian^b ; Shulong Lu^b ; ^{sllu2008@sinano.ac.cn} ; Hui Yang^a ; ^b

关键词：A3. Molecular beam epitaxy ; B2. Semiconducting III-V materials ; B3. Solar cells

刊名：Journal of Crystal Growth

出版年：2017

9.Thick nonpolar m-plane and semipolar GaN on an ammonothermal seed by tri-halide vapor-phase epitaxy using GaCl₃

作者：Kenji Iso ; ^{isokenji@cc.tuat.ac.jp} ; Karen Matsuda ; Nao Takekawa ; Kazuhiro Hikida ; Naoto Hayashida ; Hisashi Murakami ; Akinori Koukitu

关键词：A1. Substrates ; A3. Hydride vapor-phase epitaxy ; B1. Nitrides ; B2. Semiconducting III-V materials

刊名：Journal of Crystal Growth

出版年：2017

10.III-V site-controlled quantum dots on Si patterned by nanoimprint lithography

作者：S. Hussain^a ; ^b ; A. Pozzato^a ; M. Tormen^a ; V. Zannier^a ; G. Biasiol^a ; ^{biasiol@iom.cnr.it" class="auth_mail" title="E-mail the corresponding author}

关键词：A1. Nanostructures ; A1. Characterization ; A1. Surface structure ; A3. Molecular beam epitaxy ; B2. Semiconducting III&ndash ; V materials ; B2. Semiconducting silicon

刊名：Journal of Crystal Growth

出版年：2016

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