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内部出版物
在“
Elsevier电子期刊
”中,
命中:
21
条,耗时:小于0.01 秒
1.
Improved light-output power of InGaN-based multiple-quantum-well light-emitting diodes by GaN/
InAlGaN
/GaN multi-barrier
作者:
Jongmin Kim
a
;
Bong Kyun Kang
b
;
Sung-Nam Lee
c
;
Jehyuk Choi
a
;
Keun Man Song
a
;
keunman.song@kanc.re.kr" class="auth_mail" title="E-mail the corresponding author
关键词:
InAlGaN
;
Multi-layer barrier
;
Light-emitting diode (LED)
刊名:Current Applied Physics
出版年:2016
2.
Characterization of temperature-dependent photoluminescence properties of
InAlGaN
quaternary alloys
作者:
S.Y. Hu
;
Y.C. Lee
;
Y.H. Weng
;
I.T. Ferguson
;
Z.C. Feng
关键词:
InAlGaN
alloy
;
Photoluminescence
;
X-ray diffraction
;
Stress
刊名:Journal of Alloys and Compounds
出版年:25 February, 2014
3.
Homogeneity and composition of AlInGaN: A multiprobe nanostructure study
作者:
Florian F. Krause
a
;
f.krause@ifp.uni-bremen.de" class="auth_mail" title="E-mail the corresponding author
;
Jan-Philipp Ahl
b
;
Darius Tytko
c
;
Pyuck-Pa Choi
c
;
Ricardo Egoavil
d
;
Marco Schowalter
a
;
Thorsten Mehrtens
a
;
Knut Mü
;
ller-Caspary
a
;
Johan Verbeeck
d
;
Dierk Raabe
c
;
Joachim Hertkorn
b
;
Karl Engl
b
;
Andreas Rosenauer
a
关键词:
HAADF STEM
;
AlInGaN
;
Homogeneity
;
InAlGaN
;
EDX
;
APT
;
AlGaInN
刊名:Ultramicroscopy
出版年:2015
4.
Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions
作者:
Jeomoh Kim
;
Zachary Lochner
;
Mi-Hee Ji
;
Suk Choi
;
Hee Jin Kim
;
Jin Soo Kim
;
Russell D. Dupuis
;
Alec M. Fischer
;
Reid Juday
;
Yu Huang
;
Ti Li
;
Jingyi Y. Huang
;
Fern
;
o A. Ponce
;
Jae-Hyun Ryou
关键词:
A1. Characterization
;
A1. Growth models
;
A3. Metalorganic chemical vapor deposition
;
B1. Nitrides
;
B2. Semiconducting III&ndash
;
V materials
刊名:Journal of Crystal Growth
出版年:15 February, 2014
5.
Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors
作者:
Masanobu Hiroki
;
Yasuhiro Oda
;
Noriyuki Watanabe
;
Narihiko Maeda
;
Haruki Yokoyama
;
Kazuhide Kumakura
;
Hideki Yamamoto
关键词:
A1. Semiconducting III&ndash
;
V materials
;
A2. Metalorganic vapor phase epitaxy
;
B1. Nitrides
;
B2. Semiconducting indium compounds
刊名:Journal of Crystal Growth
出版年:2013
6.
MOVPE growth and characterization of
InAlGaN
films and InGaN/InAlGaN MQW structures
作者:
S. Suihkonen
;
O. Svensk
;
P.T. Tö
;
rmä
;
M. Ali
;
M. Sopanen
;
H. Lipsanen
;
M.A. Odnoblyudo
;
V.E. Bougrov
关键词:
A3. Metalorganic vapor phase epitaxy
;
A3. Quantum wells
;
B1.
InAlGaN
刊名:Journal of Crystal Growth
出版年:2008
7.
RBS/PIXE channeling for
InAlGaN
epitaxial layers
作者:
H. Sakuta
;
T. Miyachi
;
S. Kurai
;
T. Taguchi
关键词:
RBS
;
PIXE
;
MOVPE
;
InAlGaN
;
Channeling
刊名:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
出版年:2007
8.
Performance characteristics of
InAlGaN
laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapordeposition
作者:
Jianping Liu
a
;
Yun Zhang
a
;
Zachary Lochner
a
;
Seong-Soo Kim
a
;
Hyunsoo Kim
b
;
Jae-Hyun Ryou
a
;
jaehyun.ryou@gatech.edu
;
Shyh-Chiang Shen
a
;
P. Doug Yoder
c
;
Russell D. Dupuis
a
;
d
;
Qiyuan Y. Wei
e
;
Kewei W. Sun
e
;
Alec M. Fischer
e
;
Fernando A. Ponce
e
关键词:
A3. Metalorganic chemical vapor deposition
;
B2. Semiconducting III–
;
V materials
;
B3. Laser diodes
刊名:Journal of Crystal Growth
出版年:2011
9.
Anomalous luminescence behavior in the
InAlGaN
thin film
作者:
Sheng-Yao Hu
a
;
shenghu2729@yahoo.com
;
Yueh-Chien Lee
b
;
Zhe-Chuan Feng
c
;
Shi-Hong Yang
d
关键词:
Nitride material
;
Optical properties
;
Luminescence
刊名:Journal of Alloys and Compounds
出版年:2011
10.
InGaN-based true green laser diodes on novel semi-polar GaN substrates
作者:
Masaki Ueno
;
a
;
ueno-masaki@sei.co.jp
;
Yusuke Yoshizumi
a
;
Yohei Enya
a
;
Takashi Kyono
a
;
Masahiro Adachi
a
;
Shinpei Takagi
a
;
Shinji Tokuyama
a
;
Takamichi Sumitomo
a
;
Kazuhide Sumiyoshi
a
;
Nobuhiro Saga
a
;
Takatoshi Ikegami
a
;
Koji Katayama
a
;
Takao Nakamura
a
关键词:
A3. Metalorganic chemical vapor deposition
;
B1. Nitrides
;
B3. Laser diodes
刊名:Journal of Crystal Growth
出版年:2011
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