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内部出版物
在“
Elsevier电子期刊
”中,
命中:
44
条,耗时:小于0.01 秒
1.
Uniformly strained AlGaSb/
InGaSb
/AlGaSb quantum well on GaAs substrates for balanced complementary metal-oxide-semiconductors
作者:
Il Pyo Roh
a
;
b
;
1
;
Sang Hyeon Kim
b
;
1
;
Yun Heub Song
a
;
yhsong2008@hanyang.ac.kr
;
Jin Dong Song
b
;
jdsong@kist.re.kr
关键词:
InGaSb
;
Balanced CMOS
;
High mobility
;
Strain
刊名:Current Applied Physics
出版年:2017
2.
An investigation of near-infrared photoluminescence from AP-MOVPE grown InSb/GaSb quantum dot structures
作者:
C.C. Ahia
a
;
;
N. Tile
a
;
Z.N. Urgessa
a
;
J.R. Botha
a
;
J.H. Neethling
b
关键词:
A1. Defects
;
A1. Nucleation
;
A1. Substrates
;
A3. Metalorganic vapor phase epitaxy
;
A3. Quantum wells
刊名:Journal of Crystal Growth
出版年:2017
3.
GaP/InGaAs/
InGaSb
triple junction current matched photovoltaic cell with optimized thickness and quantum efficiency
作者:
B. Tiwari
;
M.J. Hossain
;
I. Bhattacharya
;
ibhattacharya@tntech.edu" class="auth_mail" title="E-mail the corresponding author
关键词:
Multijunction solar cell
;
Quantum efficiency
;
High efficiency solar cell
;
Current matching
刊名:Solar Energy
出版年:2016
4.
Parameterization of the dielectric functions of
InGaSb
alloys
作者:
Tae Jung Kim
a
;
Jun Seok Byun
a
;
Soon Yong Hwang
a
;
Han Gyeol Park
a
;
Yu Ri Kang
a
;
Jae Chan Park
a
;
Young Dong Kim
a
;
ydkim@khu.ac.kr" class="auth_mail
;
David E. Aspnes
b
关键词:
InGaSb
;
Dielectric function
;
Parametric model
;
Ellipsometry
刊名:Current Applied Physics
出版年:May 2014
5.
Uncooled
InGaSb
photovoltaic infrared detectors for gas sensing
作者:
Takashi Katsumata
;
Ryosuke Nishimura
;
Keisuke Yamaoka
;
Edson Gomes Camargo
;
Tomohiro Morishita
;
Koichiro Ueno
;
Seiichi Tokuo
;
Hiromasa Goto
;
Naohiro Kuze
关键词:
A3. Molecular beam epitaxy
;
B2. Semiconducting III&ndash
;
V materials
;
B3. Infrared devices
刊名:Journal of Crystal Growth
出版年:2013
6.
Numerical simulation of
InGaSb
crystal growth by temperature gradient method under normal- and micro-gravity fields
作者:
Masahiro Nobeoka
;
Youhei Takagi
;
Yasunori Okano
;
Yasuhiro Hayakawa
;
Sadik Dost
关键词:
A1. Computer simulation
;
A2. Growth from melt
;
A2. Microgravity conditions
;
B1. Alloys
刊名:Journal of Crystal Growth
出版年:1 January, 2014
7.
Long-wavelength infrared photoluminescence from
InGaSb
/InAs quantum dots
作者:
O. Gustafsson
a
;
ogus@kth.se
;
A. Karim
b
;
Q. Wang
b
;
J. Berggren
a
;
C. Asplund
c
;
J.Y. Andersson
b
;
M. Hammar
a
关键词:
InGaSb
;
QD
;
MOVPE
;
LWIR
刊名:Infrared Physics and Technology
出版年:2013
8.
Thermal properties of molten InSb, GaSb, and In
x
Ga
1鈭?/sub>
x
Sb alloy semiconductor materials in preparation for crystal growth experiments on the international space station
作者:
Kaoruho Sakata
;
Midori Mukai
;
Govindasamy Rajesh
;
Mukannan Arivan
;
han
;
Yuko Inatomi
;
Takehiko Ishikawa
;
Yasuhiro Hayakawa
关键词:
Viscosity
;
Wetting property
;
Evaporation rate
;
Indium gallium antimonide
;
Gallium antimonide
;
Indium antimonide
刊名:Advances in Space Research
出版年:15 February, 2014
9.
Indium gallium zinc oxide (IGZO)-based Ohmic contact formation on n-type gallium antimony (GaSb)
作者:
Jeong-Hun Shin
;
Hyun-Wook Jung
;
Woo-Shik Jung
;
Jin-Hong Park
关键词:
A. Alloys
;
A. Semiconductors
;
A. Oxides
;
D. Electrical properties
刊名:Materials Chemistry and Physics
出版年:14 February, 2014
10.
Enhanced hole mobility and density in GaSb quantum wells
作者:
Brian R. Bennett
;
brian.bennett@nrl.navy.mil
;
Theresa F. Chick
;
Mario G. Ancona
;
J. Brad Boos
关键词:
Molecular beam epitaxy
;
Quantum wells
;
Semiconducting III&ndash
;
V materials
;
Field-effect transistors
;
GaSb
刊名:Solid-State Electronics
出版年:2013
1
2
3
4
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