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内部出版物
CNKI学位论文(24)
知网期刊论文(6)
在“
Elsevier电子期刊
”中,
命中:
10
条,耗时:0.1079477 秒
在所有数据库中总计命中:
30
条
1.
Atomic layer deposition for high aspect ratio through silicon vias
作者:
Martin Knaut
;
Martin.Knaut@tu-dresden.de
;
Marcel Junige
;
Volker Neumann
;
Henry
W
ojcik
;
Thomas Henke
;
Christoph Hossbach
;
André
;
Hiess
;
Matthias Albert
;
Johann
W
.
Bartha
关键词:
TSV
;
ALD
;
Aluminum oxide
;
Tantalum nitride
;
Ruthenium
;
High aspect ratio
刊名:Microelectronic Engineering
出版年:2013
2.
In-situ analysis on the initial gro
w
th of ultra-thin ruthenium films
w
ith atomic layer deposition
作者:
Marion Geidel
;
marion.geidel@tu-dresden.de
;
Marcel Junige
;
Matthias Albert
;
Johann
W
.
Bartha
关键词:
In-situ XPS
;
In-vacuo XPS
;
In-situ AFM
;
In-vacuo AFM
;
Initial gro
w
th
;
Initial reaction mechanism
;
Thermal ALD of Ru
;
ECPR
刊名:Microelectronic Engineering
出版年:2013
3.
Enhanced gro
w
th and Cu diffusion barrier properties of thermal ALD TaNC films in Cu/lo
w
-k interconnects
作者:
Henry
W
ojcik
;
Christoph Hossbach
;
Christoph Kubasch
;
Patrick Verdonck
;
Yohan Barbarin
;
Ulrich. Merkel
;
Johann
W
.
Bartha
;
Rene H¨¹bner
;
Hans-J¨¹rgen Engelmann
;
Michael Friedemann
关键词:
ALD TaN
;
Cu diffusion barrier
;
Triangular voltage s
w
eep
;
Plasma treatment
;
Lo
w
-k
刊名:Microelectronic Engineering
出版年:2013
4.
Pad roughness evolution during break-in and its abrasion due to the pad-
w
afer contact in oxide CMP
作者:
Boris Vasilev
;
Sascha Bott
;
Rol
;
Rzehak
;
Johann
W
.
Bartha
关键词:
Chemical&ndash
;
mechanical planarization
;
CMP
;
Pad roughness
;
Asperities radius of curvature
;
Break-in
刊名:Microelectronic Engineering
出版年:2013
5.
Evaluation of direct patternable inorganic spin-on hard mask materials using electron beam lithography
作者:
Xaver Thrun
;
Kang-Hoon Choi
;
Martin Freitag
;
Andre
w
Grenville
;
Manuela Gutsch
;
Christoph Hohle
;
Jason K. Sto
w
ers
;
Johann
W
.
Bartha
关键词:
Inorganic resist
;
E-beam direct
w
rite
;
Direct patterned spin on hard mask
;
High resolution
;
22
;
nm SRAM
刊名:Microelectronic Engineering
出版年:2012
6.
Microstructure in copper interconnects – Influence of plating additive concentration
作者:
Jü
;
rgen Neuner
;
Inka Zienert
;
Anita Peeva
;
Axel Preuß
e ;
Peter Kü
;
cher
;
Johann
W
.
Bartha
关键词:
Copper
;
Electrochemical deposition
;
Additive concentration
;
Self-annealing
;
Grain gro
w
th
刊名:Microelectronic Engineering
出版年:2010
7.
Fast backscattering parameter determination in e-beam lithography
w
ith a modified doughnut test
作者:
Katja Keil
;
Marc Hauptmann
;
Kang-Hoon Choi
;
Johann
es Kretz
;
Lukas M. Eng
;
Johann
W
.
Bartha
关键词:
E-beam
;
Backscattering
;
Proximity effect correction
;
Doughnut test
刊名:Microelectronic Engineering
出版年:2009
8.
Novel enhanced stressors
w
ith graded encapsulated SiGe embedded in the source and drain areas
作者:
Andreas Naumann
;
Stephan Kronholz
;
Anthony Mo
w
ry
;
Ina Ostermay
;
Helmut Bierstedt
;
Bernhard Trui
;
Kornelia Dittmar
;
Peter Kü
;
cher
;
Johann
W
.
Bartha
;
Thorsten Kammler
关键词:
SiGe
;
CMOS
;
Stressor
;
Epitaxy
;
Erosion
;
CVD
刊名:Materials Science and Engineering: B
出版年:2008
9.
Crystallization behavior of thin ALD-Al
2
O
3
films
作者:
Jakschik
;
Stefan
;
Schroeder
;
U
w
e
;
Hecht
;
Thomas
;
Gutsche
;
Martin
;
Seidl
;
Harald
;
Bartha
;
Johann
W
.
关键词:
Al
2
O
3
;
Crystallization
;
Atomic layer deposition (ALD)
;
Dielectric constant
刊名:Thin Solid Films
出版年:2003
10.
Lo
w
temperature etching of Si in high density plasma using
作者:
Bartha
;
Johann
W
.
;
Greschner
;
Johann
;
Puech
;
M.
;
Maquin
;
P.
刊名:Microelectronic Engineering
出版年:1995
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