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CNKI学位论文(130)
知网期刊论文(51)
在“
Elsevier电子期刊
”中,
命中:
11
条,耗时:0.0269874 秒
在所有数据库中总计命中:
181
条
1.
Diamond-shaped body contact for on-state breakdown voltage improvement of SOI LDMOSFET
作者:
Arash Daghighi
;
daghighi-a@eng.sku.ac.ir
;
Hadi Hematian
hadi9827@gmail.com
关键词:
Breakdown voltage
;
Body resistance
;
Body contact
;
Lateral
BJT
;
SOI LDMOSFET
刊名:Solid-State Electronics
出版年:2017
2.
A comparative experimental investigation on responsivity and response speed of photo-diode and photo-
BJT
structures integrated in a low-cost standard CMOS process
作者:
Nikola Katic
;
nikola.katic@epfl.ch" class="auth_mail" title="E-mail the corresponding author
;
Alexandre Schmid
;
Yusuf Leblebici
关键词:
Photo-diode
;
Photo-transistor
;
Responsivity
;
Standard CMOS
刊名:Microelectronics Journal
出版年:2015
3.
Highly sensitive ion sensor based on the MOSFET-
BJT
hybrid mode of a gated
lateral
BJT
作者:
Heng Yuan
a
Author Vitae
;
Hyurk-Choon Kwon
a
Author Vitae
;
Byoung-Ho Kang
b
Author Vitae
;
In-Man Kang
c
Author Vitae
;
Dae-Hyuk Kwon
d
Author Vitae
;
Shin-Won Kang
c
;
swkang@knu.ac.kr
Author Vitae
关键词:
Gated
lateral
bipolar junction transistor
;
MOSFET&ndash
;
BJT
hybrid
;
Ion sensor
;
Highly sensitive
;
High transconductance
;
High current gain
刊名:Sensors and Actuators B: Chemical
出版年:2013
4.
Room temperature VOC gas detection using a gated
lateral
BJT
with an assembled solvatochromic dye
作者:
Heng Yuan
;
Byoung-Ho Kang
;
Hyun-Min Jeong
;
Hyurk-Choon Kwon
;
Se-Hyuk Yeom
;
Jae-Sung Lee
;
Dae-Hyuk Kwon
;
Shin-Won Kang
关键词:
Volatile organic compounds (VOCs)
;
Gated
lateral
BJT
;
MOSFET&ndash
;
BJT
hybrid
;
sensor
;
Charge-transfer (CT)
;
Self-assembled monolayer (SAM)
刊名:Sensors and Actuators B: Chemical
出版年:2013
5.
MOSFET¨C
BJT
hybrid mode of the gated
lateral
bipolar junction transistor for C-reactive protein detection
作者:
Heng
;
Yuan
a
;
Hyurk-Choon
;
Kwon
a
;
Se-Hyuk
;
Yeom
a
;
Dae-Hyuk
;
Kwon
b
;
Shin-Won
;
Kang
c
;
;
swkang@knu.ac.kr
关键词:
Lateral
bipolar junction transistor
;
C-reactive protein (CRP)
;
Biosensor
;
Self-assembled monolayer (SAM)
刊名:Biosensors and Bioelectronics
出版年:2011
6.
A high current gain gate-controlled
lateral
bipolar junction transistor with 90 nm CMOS technology for future RF SoC applications
作者:
Shuo-Mao Chen
;
Yean-Kuen Fang
;
Wen-Kuan Yeh
;
I.C. Lee
;
Yen-Ting Chiang
关键词:
Lateral
BJT
;
System-on-chip
;
CMOS
;
Radio frequency
刊名:Solid-State Electronics
出版年:2008
7.
Influence of the extrinsic base on the base current kink in SiGe
BJT
s
作者:
Sadovnikov
;
Alexei
;
Krakowski
;
Tracey
;
El-Diwany
;
Monir
关键词:
85.30P
;
SiGe
BJT
;
Base current kink
;
Extrinsic base
刊名:Applied Surface Science
出版年:2004
8.
Electrothermal simulations of high-power SOI vertical DMOS transistors with
lateral
drain contacts under unclamped inductive switching test
作者:
Pinardi
;
Kuntjoro
;
Heinle
;
Ulrich
;
Bengtsson
;
Stefan
;
Olsson
;
Jö
;
rgen
;
Colinge
;
Jean-Pierre
关键词:
Vertical DMOS transistor
;
Unclamped inductive switching
;
Self-heating effect
;
Parasitic bipolar transistor effect
;
Silicon on insulator
;
High Power
;
Integration
刊名:Solid-State Electronics
出版年:2004
9.
2D-simulation and analysis of
lateral
SiC N-emitter SiGe P-base Schottky metal-collector (NPM) HBT on SOI
作者:
Jagadesh Kumar
;
M.
;
Linga Reddy
;
C.
刊名:Microelectronics Reliability
出版年:2003
10.
Substrate-triggered ESD clamp devices for use in power-rail ESD clamp circuits
作者:
Ker
;
Ming-Dou
;
Chen
;
Tung-Yang
;
Wu
;
Chung-Yu
关键词:
Electrostatic discharge
;
Substrate-triggered technique
;
Electrostatic discharge clamp circuit
;
Secondary breakdown current (
I
t2
)
;
Bipolar junction transistor
刊名:Solid-State Electronics
出版年:2002
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