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内部出版物
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在“
Elsevier电子期刊
”中,
命中:
10,338
条,耗时:小于0.01 秒
在所有数据库中总计命中:
1
条
1.
Comparison of airflow, coal combustion, NO
x
emissions, and slagging characteristics among three large-scale
MBE
L down-fired boilers manufactured at different times
作者:
Zhongqian Ling
a
;
Bo Ling
a
;
Min Kuang
b
;
kmwust2000@163.com
;
Zhengqi Li
c
;
Ye Lu
d
关键词:
MBE
L down-fired boiler
;
Flow-field deflection
;
Asymmetric combustion
;
NOx emissions
;
Slagging
刊名:Applied Energy
出版年:2017
2.
Varying nitrogen background pressure; an efficient approach to improve electrical properties of
MBE
-grown GaAs
1−x
N
x
thin films with less atomic disorder
作者:
Mahitosh Biswas
a
;
Nilesh Shinde
b
;
Roshan Lal Makkar
c
;
Anuj Bhatnagar
c
;
Subhananda Chakrabarti
b
;
subho@ee.iitb.ac.in
关键词:
SS-
MBE
;
GaAs1&minus
;
xNx
;
Electron mobility
;
Raman spectroscopy
;
Atomic disorder
;
Annealing
刊名:Journal of Alloys and Compounds
出版年:2017
3.
The Stein-Strö
mbe
rg covering theorem in metric spaces
作者:
J.M. Aldaz
jesus.munarriz@uam.es
jesus.munarriz@icmat.es
关键词:
Covering theorem
;
Maximal functions
刊名:Journal of Mathematical Analysis and Applications
出版年:2017
4.
The striking influence of rapid thermal annealing on InGaAsP grown by
MBE
: material and photovoltaic device
作者:
Lian Ji
a
;
b
;
Ming Tan
b
;
Chao Ding
a
;
Kazuki Honda
c
;
Ryo Harasawa
c
;
Yuya Yasue
c
;
Yuanyuan Wu
b
;
Pan Dai
b
;
Atsushi Tackeuchi
c
;
Lifeng Bian
b
;
Shulong Lu
b
;
sllu2008@sinano.ac.cn
;
Hui Yang
a
;
b
关键词:
A3. Molecular beam epitaxy
;
B2. Semiconducting III-V materials
;
B3. Solar cells
刊名:Journal of Crystal Growth
出版年:2017
5.
Monte Carlo simulation of the kinetic effects on GaAs/GaAs(001)
MBE
growth
作者:
Oleg A. Ageev
;
Maxim S. Solodovnik
;
solodovnikms@sfedu.ru
;
Sergey V. Balakirev
;
Ilya A. Mikhaylin
;
Mikhail M. Eremenko
关键词:
A1. Computer simulation
;
A1. Surface processes
;
A3. Molecular beam epitaxy
;
B2. Semiconducting III&ndash
;
V materials
刊名:Journal of Crystal Growth
出版年:2017
6.
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires
作者:
Cesare Frigeri
a
;
frigeri@imem.cnr.it
;
David Scarpellini
b
;
c
;
Alexey Fedorov
d
;
Sergio Bietti
b
;
Claudio Somaschini
b
;
Vincenzo Grillo
a
;
e
;
Luca Esposito
b
;
Marco Salvalaglio
b
;
Anna Marzegalli
b
;
Francesco Montalenti
b
;
Stefano Sanguinetti
b
;
d
关键词:
Nanowires
;
InAs/GaAs
;
Self-assisted
;
MBE
;
TEM
;
FEM
刊名:Applied Surface Science
出版年:2017
7.
Dislocation densities reduction in
MBE
-grown AlN thin films by high-temperature annealing
作者:
Maud Nemoz
a
;
mn@crhea.cnrs.fr
;
Roy Dagher
a
;
Samuel Matta
a
;
b
;
Adrien Michon
a
;
Philippe Venné
;
guè
;
s
a
;
Julien Brault
a
关键词:
B1. Nitrides
;
B2. Semiconducting III-V materials
;
A3. Molecular beam epitaxy
;
A1. X-ray diffraction
;
A1. Atomic force microscopy
刊名:Journal of Crystal Growth
出版年:2017
8.
Self-assembled strained GeSiSn nanoscale structures grown by
MBE
on Si(100)
作者:
A.I. Nikiforov
a
;
b
;
nikif@isp.nsc.ru
;
V.A. Timofeev
a
;
A.R. Tuktamyshev
a
;
A.I. Yakimov
a
;
b
;
V.I. Mashanov
a
;
A.K. Gutakovskii
a
关键词:
A1. Nanostructures
;
A1. Surfaces
;
A3. Molecular beam epitaxy
;
B1. Germanium silicon alloys
;
B3. Infrared devices
刊名:Journal of Crystal Growth
出版年:2017
9.
Using nanoindentation and cathodoluminescence to identify the bundled effect of gallium nitride grown by PA-
MBE
作者:
Hua-Chiang Wen
a
;
a091316104@gmail.com
;
Wu-Ching Chou
a
;
wuchingchou@mail.nctu.edu.tw
;
Tun-Yuan Chiang
b
;
Yeau-Ren Jeng
c
;
Wen-Chung Fan
a
关键词:
Molecular beam epitaxy
;
Gallium nitride
;
Desorption
;
Cathodoluminescence
刊名:Journal of Alloys and Compounds
出版年:2017
10.
Ambidexterity as a dynamic capability in the globalization of the multinational business enterprise (
MBE
): Case studies of AB Volvo and IKEA
作者:
Jan-Erik Vahlne
a
;
jan-erik.vahlne@handels.gu.se
;
Anna Jonsson
b
;
anna.jonsson@fek.lu.se
关键词:
Ambidexterity
;
Dynamic capabilities
;
Globalization
;
Uppsala model
;
IKEA
;
AB Volvo
刊名:International Business Review
出版年:2017
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