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内部出版物
在“
Elsevier电子期刊
”中,
命中:
9
条,耗时:小于0.01 秒
1.
Time-dependent-dielectric-breakdown characteristics of Hf-doped Ta
2
O
5
/SiO
2
stack
作者:
E. Atanassova
;
N.
Novkovski
;
D. Spassov
;
A. Paskaleva
;
A. Skeparovski
刊名:Microelectronics Reliability
出版年:February, 2014
2.
Constant current stress-induced leakage current in mixed HfO
2
–Ta
2
O
5
stacks
作者:
E. Atanassova
;
N.
Novkovski
;
A. Paskaleva
;
D. Spassov
刊名:Microelectronics Reliability
出版年:2010
3.
Analysis of the improvement of Al–Ta
2
O
5
/SiO
2
–Si structures reliability by Si substrate plasma nitridation in N
2
O
作者:
N.
Novkovski
关键词:
Tantalum oxide
;
Dielectric properties
;
Nitridation
;
Interfaces
;
Metal-oxide semiconductor structure(MOS)
刊名:Thin Solid Films
出版年:2009
4.
Effects of the metal gate on the stress-induced traps in Ta
2
O
5
/SiO
2
stacks
作者:
E. Atanassova
;
A. Paskaleva
;
N.
Novkovski
关键词:
Mineral management
;
Regional pilots
;
Riparian buffer zones
;
Stimulating instruments
;
Water Framework Directive
刊名:Microelectronics Reliability
出版年:2008
5.
Stress-induced leakage currents of the RF sputtered Ta
2
O
5
on N-implanted silicon
作者:
N.
Novkovski
;
E. Atanassova
;
A. Paskaleva
关键词:
Constant current stress
;
Tantalum pentoxide
;
N-implantation
;
Silicon
刊名:Applied Surface Science
出版年:2007
6.
Limitations in the methods of determination of conduction mechanisms in high-permittivity dielectric nano-layers
作者:
N.
Novkovski
关键词:
Determination of conduction mechanisms
;
Leakage current analysis
;
Ultrathin interfacial layers
刊名:Physica B
出版年:2007
7.
Wear-out of Al–Ta
2
O
5
/SiO
2
–Si structures under dynamic stress
作者:
N.
Novkovski
and E. Atanassova
关键词:
ac stress
;
High-
k
dielectric
;
Charge trap
;
Metal gate
刊名:Applied Surface Science
出版年:2006
8.
Electrical properties of thin RF sputtered Ta
2
O
5
films after constant current stress
作者:
Pecovska-Gjorgjevich
;
M.
;
Novkovski
;
N.
;
Atanassova
;
E.
刊名:Microelectronics Reliability
出版年:2003
9.
Oxygen annealing modification of conduction mechanism in thin rf sputtered Ta
2
O
5
on Si
作者:
Atanassova
;
E.
;
Novkovski
;
N.
;
Paskaleva
;
A.
;
Pecovska-Gjorgjevich
;
M.
刊名:Solid-State Electronics
出版年:2002
1
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