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CNKI期刊论文0611(2)
知网期刊论文(665)
在“
Elsevier电子期刊
”中,
命中:
561
条,耗时:0.118944 秒
在所有数据库中总计命中:
1,772
条
1.
Mechanical strain induced changes in electrical characteristics of flexible,
non
-
volatile
ferroelectric OFET based
memory
作者:
Damien Thuau
;
damien.thuau@u-bordeaux.fr" class="auth_mail" title="E-mail the corresponding author
;
Mamatimin Abbas
;
Guillaume Wantz
;
Lionel Hirsch
;
Isabelle Dufour
;
Cé
;
dric Ayela
;
cedric.ayela@u-bordeaux.fr" class="auth_mail" title="E-mail the corresponding author
关键词:
Poly(VinyliDene Fluoride/TriFluoroEthylene)
;
Ferroelectric organic field effect transistor
;
Flexible
memory
;
Mechanical strain
刊名:Organic Electronics
出版年:2017
2.
First principles study of mixed-stack charge-transfer pyromellitic diimide - diamino pyrene (PMDI - DAP) derivative
作者:
Varun Bheemireddy
b.varun163@gmail.com
关键词:
Organic ferroelectric
;
Charge transfer complex
;
DFT
;
Non
-
volatile
memory
刊名:Chemical Physics Letters
出版年:2017
3.
Ultra-low power
non
-
volatile
resistive crossbar
memory
based on pull up resistors
作者:
Shawkat Ali
a
;
Jinho Bae
a
;
baejh@jejunu.ac.kr
;
Chong Hyun Lee
a
;
Sangho Shin
b
;
Nobuhiko P. Kobayashi
c
关键词:
NVRRAM
;
PVP
;
EHD
;
Resistive switching
;
Pull-up resistor
刊名:Organic Electronics
出版年:2017
4.
Evaluation of a new MgO barrier based on CoFeB/MgO/CoFeB structure for advanced MRAM applications
作者:
E. Smirnov
a
;
e.smirnov@crocusnano.com
;
T. Sedoykina
a
;
A. Orlov
a
;
C. Portemont
b
;
C. Ducruet
b
;
J. Alvarez-Hé
;
rault
b
;
J. Pereira
b
;
E. Danilkin
a
关键词:
MRAM
;
PVD
;
Spintronics
;
Tunnel magnetoresistance
;
Non
-
volatile
memory
;
Magnetic multilayers
;
Magnetic tunnel junctions
刊名:Microelectronic Engineering
出版年:2017
5.
Polarization reversal and
memory
effect in anti-ferroelectric materials
作者:
Melvin M. Vopson
a
;
1
;
melvin.vopson@port.ac.uk" class="auth_mail" title="E-mail the corresponding author
;
G. Caruntu
b
;
Xiaoli Tan
c
关键词:
Anti-ferroelectric
memory
;
Antiphase domains
;
Ferroelectricity
;
Ferroelectric materials
;
Electroceramics
刊名:Scripta Materialia
出版年:2017
6.
Self-directed channel memristor for high temperature operation
作者:
Kristy A. Campbell
kriscampbell@boisestate.edu
关键词:
Memristor
;
Chalcogenide
;
Ion-conductor
;
Neuromorphic
;
Non
-
volatile
memory
;
RRAM
刊名:Microelectronics Journal
出版年:2017
7.
Resistive switching in graphene-organic device: Charge transport properties of graphene-organic device through electric field induced optical second harmonic generation and charge modulation spectroscopy
作者:
Mohan V. Jacob
a
;
Mohan.Jacob@jcu.edu.au
;
Dai Taguchi
b
;
Mitsumasa Iwamoto
b
;
Kateryna Bazaka
a
;
c
;
Rajdeep Singh Rawat
d
关键词:
Graphene
;
Resistive random access
memory
;
Plasma-enhanced chemical vapour deposition
刊名:Carbon
出版年:2017
8.
Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for
nonvolatile
memory
applications
作者:
Jer-Chyi Wang
a
;
b
;
m
;
Kai-Ping Chang
a
;
Chih-Ting Lin
a
;
Ching-Yuan Su
c
;
Fethullah Gü
;
neş
d
;
Mohamed Boutchich
e
;
Chang-Hsiao Chen
f
;
Ching-Hsiang Chen
g
;
Ching-Shiun Chen
h
;
Lain-Jong Li
i
;
j
;
lance.li@kaust.edu.sa
;
Chao-Sung Lai
a
;
k
;
l
;
cslai@mail.cgu.edu.tw
刊名:Carbon
出版年:2017
9.
A review of emerging
non
-
volatile
memory
(NVM) technologies and applications
作者:
An Chen
an.chen@aya.yale.edu" class="auth_mail" title="E-mail the corresponding author
关键词:
Nonvolatile
memory
;
PCM
;
STTRAM
;
RRAM
;
FeFET
;
Storage
;
Memory
hierarchy
;
Emerging architecture
;
Selector
;
Neuromorphic computing
;
Hardware security
刊名:Solid State Electronics
出版年:2016
10.
A unified framework for designing high performance in-
memory
and hybrid
memory
file systems
作者:
Xianzhang Chen
a
;
xzchen.cq@gmail.com" class="auth_mail" title="E-mail the corresponding author
Author Vitae
;
Edwin H.-M. Sha
;
a
;
edwinsha@gmail.com" class="auth_mail" title="E-mail the corresponding author
Author Vitae
;
Qingfeng Zhuge
a
;
qfzhuge@gmail.com" class="auth_mail" title="E-mail the corresponding author
Author Vitae
;
Weiwen Jiang
a
;
jiang.wwen@gmail.com" class="auth_mail" title="E-mail the corresponding author
Author Vitae
;
Junxi Chen
a
;
cjxsimon@gmail.com" class="auth_mail" title="E-mail the corresponding author
Author Vitae
;
Jun Chen
a
;
newdays.chenjun@gmail.com" class="auth_mail" title="E-mail the corresponding author
Author Vitae
;
Jun Xu
b
;
xujun09@huawei.com" class="auth_mail" title="E-mail the corresponding author
Author Vitae
关键词:
In-
memory
file systems
;
Hybrid
memory
file systems
;
Non
-
volatile
memory
;
Flash
memory
;
Performance
刊名:Journal of Systems Architecture
出版年:2016
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