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在“
Elsevier电子期刊
”中,
命中:
9,186
条,耗时:0.1329298 秒
在所有数据库中总计命中:
32,806
条
1.
Surface chemistry of a hydrogenated mesoporous p-
type
silicon
作者:
El-Mahdi Media
belhadidz@tahoo.fr
;
Ratiba Outemzabet
;
oratiba@hotmail.com
;
oratiba@gmail.com
关键词:
Surface passivation
;
Hydrogenated
silicon
surface
;
SiO2
;
SiHx
;
FTIR
刊名:Applied Surface Science
出版年:2017
2.
Influence of
silicon
on high-temperature (600 °C) chlorosilane interactions with iron
作者:
Josh Aller
a
;
Josh.aller@yahoo.com
;
Nolan Swain
b
;
Michael Baber
a
;
Greg Tatar
b
;
Nathan Jacobson
c
;
Paul Gannon
b
关键词:
SiCl4
;
STC
;
Silicon
Tetrachloride
;
HSiCl3
;
TCS
;
Trichlorosilane
;
H2SiCl2
;
DCS
;
Dichlorosilane
;
MG-Si
;
Metallurgical Grade
Silicon
;
FEM
;
Field Emission Scanning Electron Microscope
;
EDS
;
Energy Dispersive X-Ray Spectroscopy
;
XRD
;
X-Ray Diffraction
刊名:Solar Energy Materials and Solar Cells
出版年:2017
3.
Low frequency noise in hydrogenated p-
type
amorphous
silicon
thin films
作者:
V.C. Lopes
;
vincent.lopes@unt.edu
;
A.J. Syllaios
;
C.L. Littler
关键词:
Amorphous
silicon
;
1/f noise
;
Low frequency noise
;
Mott variable range hopping
;
Hydrogen dilution
;
Boron dopant
刊名:Journal of Non-Crystalline Solids
出版年:2017
4.
Precipitation of Cu and Ni in n- and p-
type
Czochralski-grown
silicon
characterized by photoluminescence imaging
作者:
Chang Sun
;
chang.sun@anu.edu.au
;
Hieu T. Nguyen
;
Fiacre E. Rougieux
;
Daniel Macdonald
关键词:
A1. Characterisation
;
A1. Photoluminescence imaging
;
A1. Metal precipitates
;
A1. Point defects
;
A1. Doping
;
B2. Semiconducting
silicon
刊名:Journal of Crystal Growth
出版年:2017
5.
Removal rate and surface quality of the GLSI
silicon
substrate during the CMP process
作者:
Jiao Hong
;
hongjiao072095@163.com
;
Xinhuan Niu
;
xhniu@hebut.edu.cn
;
Yuling Liu
;
Chenwei Wang
;
Baoguo Zhang
;
Ming Sun
;
Juan Wang
;
Liying Han
;
Wenqian Zhang
关键词:
Silicon
substrate CMP
;
Alkaline slurry
;
Silicon
removal rate
;
Surface roughness
;
Haze
刊名:Microelectronic Engineering
出版年:2017
6.
Silicon
reflectors for external cavity lasers based on ring resonators
作者:
Chao Wang
;
Xia Li
;
Hao Jin
;
Hui Yu
;
Jianyi Yang
;
Xiaoqing Jiang
;
iseejxq@zju.edu.cn" class="auth_mail" title="E-mail the corresponding author
关键词:
Silicon
reflectors
;
External cavity lasers
;
Ring resonators
;
Silicon
photonic
刊名:Optics Communications
出版年:2017
7.
Effect of binder
type
s on the properties of the mullite fibrous ceramics prepared by TBA-based gel-casting method
作者:
Xiaojing Xu
a
;
Xue Dong
b
;
xuedong@tju.edu.cn" class="auth_mail" title="E-mail the corresponding author
;
Anran Guo
b
;
Mingchao Wang
b
;
Guofa Sui
b
;
Jiachen Liu
b
关键词:
Fiber
;
Mullite
;
Silicon
;
Mechanical properties
;
Structural application
刊名:Ceramics International
出版年:2017
8.
Porous
silicon
nanoparticle as a stabilizing support for chondroitinase
作者:
Sara Daneshjou
a
;
Bahareh Dabirmanesh
b
;
Fereshteh Rahimi
c
;
Khosro Khajeh
a
;
b
;
khajeh@modares.ac.ir
关键词:
Chondroitinase ABC I
;
Porous
silicon
;
Immobilization
;
Stability
刊名:International Journal of Biological Macromolecules
出版年:2017
9.
Preservative loss from
silicon
e tubing during filling processes
作者:
Verena Saller
a
;
Julia Matilainen
b
;
Christian Rothkopf
b
;
Daniel Serafin
c
;
Karoline Bechtold- Peters
b
;
Hanns-Christian Mahler
b
;
1
;
Wolfgang Friess
a
;
Wolfgang.Friess@lrz.uni-muenchen.de
关键词:
Silicon
e tubing
;
Peristaltic pumping
;
Filling processes
;
Preservative
;
Sorption
;
Diffusion
;
Permeability
;
Fluoropolymer tubing
刊名:European Journal of Pharmaceutics and Biopharmaceutics
出版年:2017
10.
Anomalous radial and angular strain relaxation around dilute p-, isoelectronic-, and n-
type
dopants in Si crystal
作者:
Mingshu Zhao
a
;
Juncai Dong
b
;
dongjc@ihep.ac.cn
;
Dongliang Chen
b
关键词:
Silicon
doping
;
Local lattice distortion
;
Strain relaxation mechanism
;
Charge localization
;
DFT
刊名:Physica B: Condensed Matter
出版年:2017
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