设为首页
收藏本站
网站地图
|
English
|
公务邮箱
About the library
Background
History
Leadership
Organization
Readers' Guide
Opening Hours
Collections
Help Via Email
Publications
Electronic Information Resources
常用资源
电子图书
期刊论文
学位会议
外文资源
特色专题
内部出版物
GSW全文库(20)
馆藏书目(47)
CNKI会议论文(31)
知网期刊论文(8909)
中国地质文献-中文(1)
Springer电子图书(10)
CNKI学位论文(9283)
万方学位论文(11)
馆藏期刊(3)
万方学术会议(17)
CNKI期刊论文0611(32)
在“
Elsevier电子期刊
”中,
命中:
6,321
条,耗时:0.0109946 秒
在所有数据库中总计命中:
18,364
条
1.
Room tem
p
erature current-voltage (I-V) characteristics of Ag/InGaN/n-Si
Schot
tky barrier diode
作者:
Erman Erdoğan
p>a
p>
p>
;
p>
p>e.erdogan@al
p
arslan.edu.tr
p>
;
Mutlu Kundakç
;
ı
p>b
p>
关键词:
Current-voltage characteristics
;
Ag
Schot
tky contact
;
InGaN
;
Room tem
p
erature
;
Schot
tky barrier diode
;
Thermionic vacuum arc (TVA)
刊名:
P
hysica B: Condensed Matter
出版年:2017
2.
Metal-insulator-SiC
Schot
tky structures using HfO
2
and TiO
2
dielectrics
作者:
I.R. Kaufmann
p>a
p>
p>
;
p>
p>ivanrodrigo.kaufmann@gmail.com
p>
;
A.
P
ick
p>b
p>
;
M.B.
P
ereira
p>b
p>
;
H. Boudinov
p>a
p>
p>
;
p>
p>b
p>
关键词:
MIS structure
;
SiC
;
Schot
tky barrier height
;
HfO2
;
TiO2
刊名:Thin Solid Films
出版年:2017
3.
Tuning the tunneling
p
robability by mechanical stress in
Schot
tky barrier based reconfigurable nanowire transistors
作者:
Tim Baldauf
p>a
p>
p>
;
p>
p>Tim.Baldauf@namlab.com
p>
;
André
;
Heinzig
p>a
p>
;
Jens Trommer
p>b
p>
;
Thomas Mikolajick
p>a
p>
p>
;
p>
p>b
p>
;
Walter Michael Weber
p>a
p>
p>
;
p>
p>b
p>
关键词:
Silicon nanowire
;
Reconfigurable logic
;
CMOS
;
RFET
;
SBFET
;
Tunneling
;
Schot
tky junction
;
Stress
;
Strain
;
Symmetry
;
Deformation
p
otential
;
Self-limited oxidation
;
Simulation
;
TCAD
刊名:Solid-State Electronics
出版年:2017
4.
Sensitive, real-time and anti-interfering detection of nitro-ex
p
losive va
p
ors realized by ZnO/rGO core/shell micro-
Schot
tky junction
作者:
Linjuan Guo
p>a
p>
p>
;
p>
p>b
p>Author Vitae
;
Zheng Yang
p>a
p>
p>
;
p>
p>b
p>Author Vitae
;
Yushu Li
p>a
p>Author Vitae
;
Baiyi Zu
p>a
p>Author Vitae
;
Xincun Dou
p>a
p>
p>
;
p>
p>xcdou@ms.xjb.ac.cn" class="auth_mail" title="E-mail the corres
p
onding author
p>Author Vitae
关键词:
Schot
tky junction
;
Ex
p
losive detection
;
Gas sensor
;
ZnO
;
RGO
刊名:Sensors & Actuators: B. Chemical
出版年:2017
5.
Evidence of minority carrier tra
p
s contribution in dee
p
level transient s
p
ectrosco
p
y measurement in n-GaN
Schot
tky diode
作者:
S. Amor
p>a
p>
p>
;
p>
p>b
p>
;
A. Ahaitouf
p>a
p>
;
Az Ahaitouf
p>c
p>
;
J.
P
. Salvestrini
p>b
p>
p>
;
p>
p>d
p>
p>
;
p>
p>jean-
p
aul.salvestrini@univ-lorraine.fr
p>
;
A. Ougazzaden
p>d
p>
关键词:
DLTS
;
Carrier tra
p
s
;
GaN
;
Schot
tky diode
刊名:Su
p
erlattices and Microstructures
出版年:2017
6.
Im
p
roved
Schot
tky behavior of GaN nanorods using hydrogen
p
lasma treatment
作者:
Maddaka Redde
pp
a
p>a
p>
;
Byung-Guon
P
ark
p>a
p>
;
Sang-Tae Lee
p>a
p>
;
Nguyen Hoang Hai
p>a
p>
;
Moon-Deock Kim
p>a
p>
p>
;
p>
p>mdkim@cnu.ac.kr
p>
;
Jae-Eung Oh
p>b
p>
关键词:
GaN nanorods
;
Schot
tky diode
;
Leakage current
;
Hydrogenation
;
Surface state density
刊名:Current A
pp
lied Physics
出版年:2017
7.
Organic strain sensor com
p
rised of he
p
tazole-based thin film transistor and
Schot
tky diode
作者:
Youngsuk Cho
;
P
yo Jin Jeon
;
Jin Sung Kim
;
Seongil Im
p>
;
p>
p>semicon@yonsei.ac.kr" class="auth_mail" title="E-mail the corres
p
onding author
p>
关键词:
Organic thin-film transistor (OTFT)
;
Schot
tky diode
;
Strain sensor
;
He
p
tazole
;
Elastic tensile strain
刊名:Organic Electronics
出版年:2017
8.
Schot
tky-ty
p
e edge
p
assivation of silicon solar cells
作者:
Jaeho Choi
;
Bhaskar
P
arida
;
Srikanta
P
alei
;
Keunjoo Kim
p>
;
p>
p>kimk@chonbuk.ac.kr" class="auth_mail" title="E-mail the corres
p
onding author
p>
关键词:
Si solar cell
;
Edge
p
assivation
;
Ag nanodots
;
Schot
tky barrier
刊名:Solar Energy Materials and Solar Cells
出版年:2017
9.
The role of electronic energy loss in SHI irradiated Ni/oxide/n-Ga
P
Schot
tky diode
作者:
N. Shiwakoti
p>a
p>
;
A. Bobby
p>a
p>
;
K. Asokan
p>b
p>
;
Bobby Antony
p>a
p>
p>
;
p>
p>bobby.iit.ism@gmail.com
p>
关键词:
Gallium
P
hos
p
hide
;
Schot
tky contacts
;
SHI irradiation
;
Dielectric
p
ro
p
erties
;
S
p
ace charge
p
olarization
;
Electronic energy loss
;
Negative ca
p
acitance
刊名:Microelectronics Reliability
出版年:2017
10.
A novel self-aligned charge
p
lasma
Schot
tky barrier tunnel FET using work function engineering
作者:
Sangeeta Singh
p>a
p>
p>
;
p>
p>sangeeta.singh@iiitdmj.ac.in
p>
;
Arun
P
rata
p
Singh
p>b
p>
;
P
.N. Kondekar
p>a
p>
关键词:
Schot
tky barrier tunnel FET (SB-TFET)
;
Charge
p
lasma
;
Work-function engineering
;
Sub-threshold slo
p
e (SS)
;
Drain induced barrier lowering (DIBL)
;
Random do
p
ant fluctuations (RDFs)
刊名:Microelectronic Engineering
出版年:2017
1
2
3
4
5
6
7
8
9
按检索点细分(6321)
题名(1653)
作者(1144)
关键词(1968)
文摘(4622)
NGLC 2004-2010.National Geological Library of China All Rights Reserved.
Add:29 Xueyuan Rd,Haidian District,Beijing,PRC. Mail Add: 8324 mailbox 100083
For exchange or info please contact us via
email
.