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CNKI期刊论文0611(1)
知网期刊论文(290)
在“
Elsevier电子期刊
”中,
命中:
345
条,耗时:0.0279876 秒
在所有数据库中总计命中:
1,146
条
1.
The effects of reactor design on the synthesis of titanium carbide-derived carbon
作者:
Michael R. Dutzer
a
;
Michael C. Mangarella
a
;
Jennifer A. Schott
b
;
Sheng Dai
b
;
c
;
dais@ornl.gov
;
Krista S. Walton
a
;
krista.walton@chbe.gatech.edu
关键词:
Carbide-derived carbon
;
Titanium
;
Partial
etching
;
Reactor design
;
Core-shell extraction
刊名:Chemical Engineering Science
出版年:2017
2.
Anti-sintering silica-coating CuZnAlZr catalyst for methanol synthesis from CO hydrogenation
作者:
Qiufeng Zhu
a
;
zhuqiufeng@btbu.edu.cn
;
Qingcheng Zhang
b
;
Lixiong Wen
b
关键词:
Anti-sintering catalyst
;
CuZnAlZr mixed oxides
;
Silica-coating layer
;
Methanol synthesis
刊名:Fuel Processing Technology
出版年:2017
3.
Synthesis and characterization of aluminum carbide-derived carbon with residual aluminum-based nanoparticles
作者:
Colton M. Moran
a
;
Robert M. Marti
b
;
Sophia E. Hayes
b
;
hayes@wustl.edu
;
Krista S. Walton
a
;
krista.walton@chbe.gatech.edu
刊名:Carbon
出版年:2017
4.
Ghost microstructure evolution and identification in the coarse grain heat affected zone of 2.25Cr-1Mo-V-Ti steel using tint
etching
作者:
Kyongwoon Lee
a
;
Seonghyeong Lee
b
;
Hyesung Na
b
;
Chungyun Kang
b
;
kangcy@pusan.ac.kr" class="auth_mail" title="E-mail the corresponding author
关键词:
Cr-Mo steel
;
Welding
;
CGHAZ
;
Ghost microstructure
;
Tint
etching
;
M23C6 carbide
刊名:Materials Characterization
出版年:2016
5.
New Al
0.25
Ga
0.75
N/GaN high electron mobility transistor with
partial
etched AlGaN layer
作者:
Song Yuan
;
yuansong1013@163.com" class="auth_mail" title="E-mail the corresponding author
;
Baoxing Duan
bxduan@163.com" class="auth_mail" title="E-mail the corresponding author
;
Xiaoning Yuan
;
Zhen Cao
icaozhen@163.com" class="auth_mail" title="E-mail the corresponding author
;
Haijun Guo
guohj0822@163.com" class="auth_mail" title="E-mail the corresponding author
;
Yintang Yang
ytyang@xidian.edu.cn" class="auth_mail" title="E-mail the corresponding author
关键词:
HEMT
;
Electric field modulation effect
;
Power device
刊名:Superlattices and Microstructures
出版年:2016
6.
Selective demineralisation of dentine extrafibrillar minerals—A potential method to eliminate water-wet bonding in the etch-and-rinse technique
作者:
Bingqing Li
a
;
Xiaoming Zhu
a
;
Lin Ma
b
;
Fangping Wang
c
;
Xiaoqiang Liu
a
;
Xu Yang
a
;
Jianfeng Zhou
a
;
dentistzjf@163.com" class="auth_mail" title="E-mail the corresponding author
;
Jianguo Tan
a
;
tanwume@vip.sina.com" class="auth_mail" title="E-mail the corresponding author
;
David H. Pashley
d
;
Franklin R. Tay
d
;
ftay@augusta.edu" class="auth_mail" title="E-mail the corresponding author
关键词:
Collagen matrix
;
Etch-and-rinse
;
Interfibrillar space
;
Intrafibrillar mineral
;
Selective demineralisation
刊名:Journal of Dentistry
出版年:2016
7.
Assessing the effect of sequential extraction on the uranium-series isotopic composition of a basaltic weathering profile
作者:
Davide Menozzi
a
;
dm791@uowmail.edu.au" class="auth_mail" title="E-mail the corresponding author
;
Anthony Dosseto
a
;
Leslie P.J. Kinsley
b
关键词:
Uranium-series isotopes
;
Soil production rates
;
Sequential extraction
;
Basaltic regolith
刊名:Chemical Geology
出版年:2016
8.
Facile fabrication of porous carbon film/Ni foil double-layer structure for high-rate and high-power flexible electrochemical capacitor
作者:
Yuhao Liu
;
Minglei Hu
;
Yang Yue
;
Daming Zhu
;
Helin Wei
;
hlwei@hust.edu.cn" class="auth_mail" title="E-mail the corresponding author
关键词:
Porous carbon film/Ni
;
Ambient pressure CVD
;
Flexible electrochemical capacitor
刊名:Journal of Electroanalytical Chemistry
出版年:2016
9.
Chemically Modified Electrodes for Recessed Microelectrode Array
作者:
N.A. Mohd Said
a
;
b
;
nazurams@mardi.gov.my" class="auth_mail" title="E-mail the corresponding author
;
V.I. Ogurtsov
a
;
K. Twomey
a
;
L.C. Nagle
a
;
G. Herzog
c
关键词:
Electrochemically assisted self-assembly
;
Mesoporous silica films
;
Nanoporous gold
;
Recessed microelectrode array
;
Electrochemical impedance spectroscopy
刊名:Procedia Chemistry
出版年:2016
10.
Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors
作者:
M. Capriotti
a
;
mattia.capriotti@infineon.com" class="auth_mail" title="E-mail the corresponding author
;
E. Bahat Treidel
b
;
C. Fleury
a
;
O. Bethge
a
;
C. Ostermaier
c
;
M. Rigato
a
;
S.L.C. Lancaster
a
;
F. Brunner
b
;
H. Detz
a
;
O. Hilt
b
;
J. Wü
;
rfl
b
;
D. Pogany
a
;
G. Strasser
a
刊名:Solid State Electronics
出版年:2016
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