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在“Elsevier电子期刊”中，命中：519条，耗时：0.0110297 秒

在所有数据库中总计命中：1,937条

1.Optimal process parameters for phosphorus spin-on-doping of germanium

作者：Virginia Boldrini^a ; ^b ; Sara Maria Carturan^a ; ^b ; ^{sara.carturan@lnl.infn.it" class="auth_mail" title="E-mail the corresponding author} ; ^{saramaria.carturan@unipd.it" class="auth_mail" title="E-mail the corresponding author} ; Gianluigi Maggioni^a ; ^b ; Enrico Napolitani^a ; ^b ; Daniel Ricardo Napoli^b ; Riccardo Camattari^c ; Davide De Salvador^a ; ^b

关键词：Germanium ; Spin-on-doping ; Curing ; Phosphorus diffusion ; Electrical activation ; Surface corrosion

刊名：Applied Surface Science

出版年：2017

2.Deep Diffusion of Phosphorus in Silicon using Microsecond-pulsed Laser Doping

作者：Som Mondal ; ^{s_mondal@iitb.ac.in} ; Chetan Singh Solanki ^{chetanss@iitb.ac.in}

关键词：Deep diffusion ; EBIC ; Junction depth ; Laser doping

刊名：Materials Science in Semiconductor Processing

出版年：2017

3.Insight into highly efficient simultaneous photocatalytic removal of Cr(VI) and 2,4-diclorophenol under visible light irradiation by phosphorus doped porous ultrathin g-C₃N₄ nanosheets from aqueous media: Performance and reaction mechanism

作者：Yaocheng Deng^a ; ^b ; Lin Tang^a ; ^b ; ^{tanglin@hnu.edu.cn} ; Guangming Zeng^a ; ^b ; ^{zgming@hnu.edu.cn} ; Zhejing Zhu^a ; ^b ; Ming Yan^a ; ^b ; Yaoyu Zhou^c ; Jiajia Wang^a ; ^b ; Yani Liu^a ; ^b ; Jingjing Wang^a ; ^b

关键词：g-C3N4 ; Phosphorus doping ; Pores and nanosheets ; Cr(VI) reduction ; 2 ; 4-Diclorophenol oxidation

刊名：Applied Catalysis B: Environmental

出版年：2017

4.Boron and phosphorus co-doped carbon counter electrode for efficient hole-conductor-free perovskite solar cell

作者：Ming Chen^a ; ^{chenming19830618@126.com} ; Ru-Hua Zha^a ; Zhong-Yong Yuan^b ; Qiang-Shan Jing^a ; ^c ; Zhong-Yuan Huang^a ; Xing-Kun Yang^a ; Shu-Ming Yang^a ; Xiang-Hua Zhao^a ; Dong-Li Xu^a ; Guo-Dong Zou^a

关键词：Perovskite solar cell ; Hole-conductor free ; Carbon counter electrode ; Boron and phosphorus co-doping ; Work function

刊名：Chemical Engineering Journal

出版年：2017

5.3D modeling of doping from the atmosphere in floating zone silicon crystal growth

作者：A. Sabanskis ; ^{andrejs.sabanskis@lu.lv} ; K. Surovovs ; J. Virbulis

关键词：A1. Computer simulation ; A1. Convection ; A1. Doping ; A1. Surface processes ; A2. Floating zone technique ; B2. Semiconducting silicon

刊名：Journal of Crystal Growth

出版年：2017

6.Static refractive index engineering of a singlewalled carbon nanotube through co-doping: A theoretical study

作者：Deepa Sharma^a ; ^{bhargava.dp@gmail.com} ; Neena Jaggi^b ; ^{neena_jaggi@rediffmail.com}

关键词：Single-walled carbon nanotubes ; Co-doping ; Optical properties ; Density functional theory ; CASTEP ; Material studio

刊名：Optik - International Journal for Light and Electron Optics

出版年：2017

7.Nitrogen and phosphorus co-doped graphene quantum dots as a nano-sensor for highly sensitive and selective imaging detection of nitrite in live cell

作者：Rongjun Liu^a ; ^bAuthor Vitae ; Jingjin Zhao^a ; ^{jzhao12@163.com}Author Vitae ; Zirong Huang^aAuthor Vitae ; Liangliang Zhang^aAuthor Vitae ; Mengbing Zou^aAuthor Vitae ; Bingfang Shi^aAuthor Vitae ; Shulin Zhao^a ; ^{zhaoshulin001@163.com}Author Vitae

关键词：Doped graphene quantum dots ; Nitrogen ; Phosphorus ; Detection of nitrite ; Live cell imaging

刊名：Sensors and Actuators B: Chemical

出版年：2017

8.Three-dimensional phosphorus-doped graphene as an efficient metal-free electrocatalyst for electrochemical sensing

作者：Ye Tian^a ; ^{tianyehnu@163.com}Author Vitae ; Zhen Wei^bAuthor Vitae ; Kehui Zhang^cAuthor Vitae ; Shuo Peng^dAuthor Vitae ; Xiao Zhang^dAuthor Vitae ; Wuming Liu^eAuthor Vitae ; Ke Chu^f ; ^{chukelut@163.com}Author Vitae

关键词：Three-dimensional graphene ; Phosphorus-doped graphene ; Electrocatalytic activity ; Electrochemical sensor

刊名：Sensors and Actuators B: Chemical

出版年：2017

9.H₂-Ar dilution for improved c-Si quantum dots in P-doped SiN_x:H thin film matrix

作者：Jia Liu^a ; Weijia Zhang^b ; ^{zwjghx@126.com} ; Shengzhong (Frank) Liu^a ; ^c ; ^{szliu@dicp.ac.cn} ; ^{liusz@snnu.edu.cn}

关键词：c-Si quantum dot ; SiNx ; H thin film ; Phosphorus-doping ; PECVD

刊名：Applied Surface Science

出版年：2017

10.Behavior of volatile dopants (P, Sb) in Czochralski silicon growth

作者：M. Porrini ; R. Scala ; V.V. Voronkov

关键词：A2. Czochralski method ; B2. Semiconducting silicon ; A1. Doping ; A2. Industrial Crystallization

刊名：Journal of Crystal Growth

出版年：2017

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