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在“Elsevier电子期刊”中，命中：277条，耗时：0.0210341 秒

在所有数据库中总计命中：2,766条

1.Acoustic phonon modes in asymmetric Al_xGa_1−xN/GaN/Al_yGa_1−yN quantum wells

作者：Y.H. Zan ; S.L. Ban ; ^{slban@imu.edu.cn} ; Y.J. Chai ; Y. Qu

关键词：Acoustic phonon ; Asymmetric quantum well ; AlxGa1&minus ; xN/GaN/Al1&minus ; yGayN

刊名：Superlattices and Microstructures

出版年：2017

2.Optical gain spectra of 1.55 μm GaAs/GaN_.58yAs_1-1.58yBi_y/GaAs single quantum well

作者：I. Guizani ; C. Bilel ; M.M. Habchi ; A. Rebey ; ^{ahmed.rebey@fsm.rnu.tn}

关键词：GaAs/GaN.58yAs1-1.58yBiy/GaAs SQW ; Optical gain ; p-i-n type SQW ; BAC model ; Self-consistent calculation

刊名：Superlattices and Microstructures

出版年：2017

3.Reprint of: Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field

作者：J.A. Budagosky^a ; N. Garro^a ; ^{nuria.garro@uv.es" class="auth_mail" title="E-mail the corresponding author} ; A. Cros^a ; A. Garcí ; a-Cristó ; bal^a ; S. Founta^b ; B. Daudin^b

关键词：Non-polar quantum dots ; Photoluminescence ; Electronic structure ; Stark effect ; Stacking faults

刊名：Materials Science in Semiconductor Processing

出版年：2016

4.Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field

作者：J.A. Budagosky^a ; N. Garro^a ; ^{nuria.garro@uv.es" class="auth_mail" title="E-mail the corresponding author} ; A. Cros^a ; A. Garcí ; a-Cristó ; bal^a ; S. Founta^b ; B. Daudin^b

关键词：Non-polar quantum dots ; Photoluminescence ; Electronic structure ; Stark effect ; Stacking faults

刊名：Materials Science in Semiconductor Processing

出版年：2016

5.Electric field effect on the quadratic electro optic effects and electro absorption process in GaN/AlGaN spherical quantum dot

作者：Mohammad Kouhi ; ^{kouhi@iaut.ac.ir" class="auth_mail" title="E-mail the corresponding author}

关键词：Quantum dot ; Third order susceptibility ; Electro-absorption ; Electric field

刊名：Optik - International Journal for Light and Electron Optics

出版年：2016

6.Optical absorption coefficint of GaN/AlN multi-shells quantum dots: Optical intensity and magnetic field effects

作者：M. Solaimani ; ^{solaimani@qut.ac.ir" class="auth_mail" title="E-mail the corresponding author} ; ^{solaimani.mehdi@gmail.com" class="auth_mail" title="E-mail the corresponding author}

关键词：Constant total effective radius multi-wells quantum dots ; Absorption coefficient ; Optical intensity ; Magnetic field

刊名：Optik - International Journal for Light and Electron Optics

出版年：2016

7.Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing

作者：R. Woscholski ; ^{ronja.woscholski@physik.uni-marburg.de" class="auth_mail" title="E-mail the corresponding author} ; M.K. Shakfa ; S. Gies ; M. Wiemer ; A. Rahimi-Iman ; M. Zimprich ; S. Reinhard ; K. Jandieri ; S.D. Baranovskii ; W. Heimbrodt ; K. Volz ; W. Stolz ; M. Koch

关键词：Lattice-matched III&ndash ; V/Si semiconductors ; Heterostructures ; Dilute nitride Ga(NAsP) ; Rapid thermal annealing ; Time-resolved photoluminescence ; Carrier dynamics

刊名：Thin Solid Films

出版年：2016

8.Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum dots

作者：Charlotte Rothfuchs^a ; ^{Charlotte.Rothfuchs@ruhr-uni-bochum.de" class="auth_mail" title="E-mail the corresponding author} ; Nadezhda Kukharchyk^a ; Tristan Koppe^b ; Fabrice Semond^c ; Sarah Blumenthal^d ; Hans-Werner Becker^e ; Donat J. As^d ; Hans C. Hofsä ; ss^b ; Andreas D. Wieck^a ; Arne Ludwig^a

关键词：GaN/AlN ; Quantum dots ; Ion beam implantation ; Photoluminescence ; Quantum confined Stark effect

刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

出版年：2016

9.Finite element modelling of nonlinear piezoelectricity in wurtzite GaN/AlN quantum dots

作者：Grzegorz Jurczak ; ^{gjurcz@ippt.pan.pl" class="auth_mail" title="E-mail the corresponding author} ; Pawe艂 D艂u偶ewski

关键词：Piezoelectricity ; Heterostructure ; Nonlinearity ; Quantum dot

刊名：Computational Materials Science

出版年：2016

10.GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source

作者：Yvon Cordier^a ; ^{yc@crhea.cnrs.fr" class="auth_mail" title="E-mail the corresponding author} ; Benjamin Damilano^a ; Phannara Aing^b ; Catherine Chaix^b ; Florence Linez^c ; Filip Tuomisto^c ; Philippe Venné ; guè ; s^a ; Eric Frayssinet^a ; Denis Lefebvre^a ; Marc Portail^a ; Maud Nemoz^a

关键词：A1. Crystal morphology ; A1. Impurities ; A1. Point defects ; A3. Molecular beam epitaxy ; A3. Quantum wells ; B1. Nitrides

刊名：Journal of Crystal Growth

出版年：2016

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