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内部出版物
在“
Elsevier电子期刊
”中,
命中:
23
条,耗时:小于0.01 秒
1.
Interface properties of MBE grown epitaxial oxides on GaAs
作者:
R. Contreras-Guerrero
;
M. Edirisooriya
;
O.C. Noriega
;
R.
Droopad
关键词:
A1. Reflection high energy diffraction
;
A3. Molecular beam epitaxy
;
B1. Oxides
;
B1. Perovskites
;
B2. Dielectric materials
刊名:Journal of Crystal Growth
出版年:2013
2.
Growth of heterostructures on InAs for high mobility device applications
作者:
R. Contreras-Guerrero
;
S. Wang
;
M. Edirisooriya
;
W. Priyantha
;
J.S. Rojas-Ramirez
;
K. Bhuwalka
;
G. Doornbos
;
M. Holl
;
R. Oxl
;
G. Vellianitis
;
M. Van Dal
;
B. Duriez
;
M. Passlack
;
C.H. Diaz
;
R.
Droopad
关键词:
A1. Atomic force microscopy
;
A3. Molecular beam epitaxy
;
B1. Antimonides
;
B2. Semiconducting ternary compounds
;
B2. Semiconducting indium compounds
刊名:Journal of Crystal Growth
出版年:2013
3.
Reversible and irreversible reactions of three oxygen precursors on InAs(0 0 1)-(4 × 2)/c(8 × 2)
作者:
Jonathon B. Clemens
;
Ravi
Droopad
;
Andrew C. Kummel
关键词:
Scanning tunneling microscopy
;
Indium arsenide
;
Semiconducting surfaces
;
Surface chemical reaction
;
Atomic layer deposition
;
Oxidants
刊名:Surface Science
出版年:2010
4.
Structural and electronic properties of group III Rich In
0.53
Ga
0.47
As(001)
作者:
Jian Shen
;
Jonathon B. Clemens
;
Evgueni A. Chagarov
;
Darby L. Feldwinn
;
Wilhelm Melitz
;
TaoSong
;
Sarah R. Bishop
;
Andrew C. Kummel
;
Ravi
Droopad
关键词:
Density functional calculations
;
Scanning tunneling microscopy
;
Scanning tunneling spectroscopies
;
Semiconducting surfaces
;
Surface relaxation and reconstruction
;
Indium gallium arsenide
;
Bader charge
刊名:Surface Science
出版年:2010
5.
Initial stages of the autocatalytic oxidation of the InAs(0 0 1)-(4 × 2)/c
作者:
Jonathon B. Clemens
;
Sarah R. Bishop
;
Darby L. Feldwinn
;
Ravi
Droopad
;
Andrew C. Kummel
关键词:
Density functional calculations
;
Monte Carlo simulations
;
Scanning tunneling microscopy
;
Chemisorption
;
Oxidation
;
Indium arsenide
;
Oxygen
;
Semi conducting surfaces
刊名:Surface Science
出版年:2009
6.
Anomalous hybridization in the In-rich InAs(0 0 1) reconstruction
作者:
Darby L. Feldwinn
;
Jonathon B. Clemens
;
Jian Shen
;
Sarah R. Bishop
;
Tyler J. Grassman
;
Andrew C. Kummel
;
Ravi
Droopad
;
Matthias Passlack
关键词:
Density functional calculations
;
Scanning tunneling microscopy
;
Indium arsenide
;
Semiconducting surfaces
;
Surface relaxation and reconstruction
刊名:Surface Science
出版年:2009
7.
Characteristics of thin lanthanum lutetium oxide high-k dielectrics
作者:
Dina H. Triyoso
;
David C. Gilmer
;
Jack Jiang
;
Ravi
Droopad
关键词:
Lanthanum
;
Lutetium
;
High-k dielectrics
;
Semiconductor
;
Molecular beam epitaxy
;
Thin film deposition
刊名:Microelectronic Engineering
出版年:2008
8.
Monte Carlo simulations of InGaAs nano-MOSFETs
作者:
K. Kalna
;
R.
Droopad
;
M. Passlack
;
A. Asenov
关键词:
III-V MOSFETs
;
High-
κ
;
;
δ
;
-doped heterostructure
;
Monte Carlo simulations
刊名:Microelectronic Engineering
出版年:2007
9.
Monte Carlo simulations of InGaAs nano-MOSFETs
作者:
K. Kalna
;
R.
Droopad
;
M. Passlack
;
A. Asenov
关键词:
III-V MOSFETs
;
High-
κ
;
;
δ
;
-doped heterostructure
;
Monte Carlo simulations
刊名:Microelectronic Engineering
出版年:2007
10.
Development of GaAs-based MOSFET using molecular beam epitaxy
作者:
Ravi
Droopad
;
Karthik Rajagopalan
;
Jon Abrokwah
;
Liz Adams
;
Nate Engl
;
Dave Uebelhoer
;
Peter Fejes
;
Peter Zurcher
;
Matthias Passlack
关键词:
A1. Enhancement mode MOSFET
;
B1. GaAs MOSFET
;
B2. Compound semiconductors
;
B2. Gate dielectric
刊名:Journal of Crystal Growth
出版年:2007
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