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CNKI学位论文(66)
知网期刊论文(4)
在“
Elsevier电子期刊
”中,
命中:
8
条,耗时:小于0.01 秒
在所有数据库中总计命中:
70
条
1.
First-principles study of oxygen and aluminum defects in 尾-Si
3
N
4
: Compensation and charge trapping
作者:
Maria Elena Grillo
;
Simon D. Elliott
;
Jes煤s Rodr铆guez
;
Rafael A帽ez
;
David Santiago Coll
;
Amit Suhane
;
Leurent Breuil
;
Antonio Arreghini
;
Robin
Degraeve
;
Ahmed Shariq
;
Volkhard Beyer
;
Malte Czernohorsky
关键词:
Silicon clusters
;
Silicon nitrides
;
Charge traps
;
Oxygen defects
;
Al defects
;
Charge transitions
刊名:Computational Materials Science
出版年:January, 2014
2.
A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique
作者:
Moonju Cho
;
Robin
Degraeve
;
Philippe Roussel
;
Bogdan Govoreanu
;
Ben Kaczer
;
Mohammed B. Zahid
;
Eddy Simoen
;
Antonio Arreghini
;
Malgorzata Jurczak
;
Jan Van Houdt
;
Guido Groeseneken
关键词:
Modeling
;
Charge trapping
;
Non-volatile memory
;
Trap profile
刊名:Solid-State Electronics
出版年:2010
3.
Distribution and generation of traps in SiO
2
/Al
2
O
3
gate stacks
作者:
Isodiana Crupi
;
Robin
Degraeve
;
Bogdan Govoreanu
;
David P. Brunco
;
Philippe Roussel
;
Jan Van Houdt
刊名:Microelectronics Reliability
出版年:2007
4.
Profiling of traps in SiO
2
/Al
2
O
3
gate stack by the charge pumping technique
作者:
Isodiana Crupi
;
Robin
Degraeve
;
Bogdan Govoreanu
;
David P. Brunco
;
Philippe Roussel
;
Jan Van Houdt
关键词:
High-k materials
;
Charge pumping
;
Traps distribution
;
Traps generation
刊名:Materials Science in Semiconductor Processing
出版年:2006
5.
Charge trapping in MOSFETs with HfSiON dielectrics during electrical stressing
作者:
Robert O’
;
Connor
;
Greg Hughes
;
Robin
Degraeve
;
Ben Kaczer
关键词:
Hafnium silicate
;
High-
k
;
Reliability
;
Charge trapping
刊名:Microelectronic Engineering
出版年:2005
6.
Scaling CMOS: Finding the gate stack with the lowest leakage current
作者:
Kauerauf
;
Thomas
;
Govoreanu
;
Bogdan
;
Degraeve
;
Robin
;
Groeseneken
;
Guido
;
Maes
;
Herman
关键词:
High-
k
;
Gate dielectric
;
Leakage current
;
k
-Value
;
Barrier height
刊名:Solid State Electronics
出版年:2005
7.
Weibull slope and voltage acceleration of ultra-thin (1.1–1.45 nm EOT) oxynitrides
作者:
O'Connor
;
Robert
;
Degraeve
;
Robin
;
Kaczer
;
Ben
;
Veloso
;
Anabela
;
Hughes
;
Greg
;
Groeseneken
;
Guido
关键词:
Silicon oxynitride
;
Reliability
;
Weibull slope
;
Voltage acceleration
;
Trap generation
刊名:Microelectronic Engineering
出版年:2004
8.
Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance
作者:
OaaaConnor
;
Robert
;
Hughes
;
Greg
;
Degraeve
;
Robin
;
Kaczer
;
Ben
刊名:Microelectronics Reliability
出版年:2005
1
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