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CNKI会议论文(1)
CNKI学位论文(185)
知网期刊论文(62)
在“
Elsevier电子期刊
”中,
命中:
49
条,耗时:0.0109946 秒
在所有数据库中总计命中:
248
条
1.
Spectral sensitivity of graphene/silicon heterojunction photodetectors
作者:
Sarah Riazimehr
a
;
Andreas Bablich
a
;
Daniel Schneider
a
;
Satender Kataria
a
;
Vikram Passi
a
;
Chanyoung Yim
b
;
Georg S. Duesberg
b
;
Max C. Lemme
a
;
max.lemme@uni-siegen.de" class="auth_mail" title="E-mail the corresponding author
关键词:
Graphene
;
Molybdenum disulfide
;
Schottky
barrier
diode
;
Photodiode
;
Responsivity
;
Spectral response
刊名:Solid State Electronics
出版年:2016
2.
Chemical and electrical characteristics of annealed Ni/Au and Ni/Ir/Au contacts on AlGaN
作者:
P.N.M. Ngoepe
a
;
phuti.ngoepe@up.ac.za" class="auth_mail" title="E-mail the corresponding author
;
W.E. Meyer
a
;
F.D. Auret
a
;
E. Omotoso
a
;
M. Diale
a
;
H.C. Swart
b
;
M.M. Duvenhage
b
;
E. Coetsee
b
关键词:
Annealing
;
Schottky
photodiode
;
AlGaN
刊名:Physica B: Physics of Condensed Matter
出版年:2016
3.
Transparent conductor-embedding high-sensitive germanium NIR photodetector
作者:
Ju-Hyung Yun
a
;
Melvin David Kumar
a
;
d
;
Malkeshkumar Patel
a
;
Yun Chang Park
b
;
Byung Soo Kim
c
;
Joondong Kim
a
;
joonkim@incheon.ac.kr" class="auth_mail" title="E-mail the corresponding author
关键词:
Transparent conductors (ITO/AZO)
;
Ge
Schottky
Photodetector
;
NIR detection
;
Band bending
刊名:Materials Science in Semiconductor Processing
出版年:2016
4.
Optical and electrical characterization of AlGaN based
Schottky
photodiode
s after annealing at different temperatures
作者:
PNM Ngoepe
;
phuti.ngoepe@up.ac.za" class="auth_mail
;
WE Meyer
;
M Diale
;
FD Auret
;
L van Schalkwyk
关键词:
Annealing
;
Schottky
photodiode
;
AlGaN
刊名:Physica B
出版年:15 April, 2014
5.
Photovoltaic characteristics of Au/PVA (Bi-doped)/n-Si
Schottky
barrier
diodes (SBDs) at various temperatures
作者:
H.G. Ç
;
etinkaya
a
;
H. Tecimer
a
;
huseyintecimer@gmail.com
;
H. Uslu
b
;
?. Alt?ndal
a
关键词:
Au/n-Si SBDs with Bi-doped PVA interfacial layer
;
Temperature and illumination effects
;
Main electrical parameters of diode
刊名:Current Applied Physics
出版年:2013
6.
Characterization of AlGaN-based metal-semiconductor solar-blind UV
photodiode
s with IrO
2
Schottky
contacts
作者:
L. van Schalkwyk
;
Louwrens.VanSchalkwyk@up.ac.za
;
W.E. Meyer
;
F.D. Auret
;
J.M. Nel
;
P.N.M. Ngoepe
;
M. Diale
关键词:
AlGaN
;
Solar-blind
;
Ultraviolet
;
Iridium oxide
;
Schottky
;
Photodiode
;
Optoelectronic
刊名:Physica B
出版年:2012
7.
Electrical and photoresponse properties of Al/p-CuFeO
2
/p-Si/Al MTCOS
photodiode
作者:
R.K. Gupta
a
;
ramguptamsu@gmail.com
;
M. Cavas
b
;
Ahmed A. Al-Ghamdi
c
;
Z.H. Gafer
d
;
F. El-Tantawy
e
;
F. Yakuphanoglu
c
;
f
;
fyhanoglu@firat.edu.tr
关键词:
CuFeO2
;
Band gap
;
Schottky
diode
;
Sol&ndash
;
gel
;
Junction properties
;
Capacitance
刊名:Solar Energy
出版年:2013
8.
Optoelectronic characterization of Au/Ni/n-AlGaN
photodiode
s after annealing at different temperatures
作者:
P.N.M. Ngoepe
;
phuti.ngoepe@up.ac.za
;
W.E. Meyer
;
M. Diale
;
F.D. Auret
;
L. van Schalkwyk
关键词:
Annealing
;
Schottky
photodiode
;
AlGaN
刊名:Physica B
出版年:2012
9.
Photodiode
s based on graphene oxide-silicon junctions
作者:
D.-T. Phan
;
R.K. Gupta
;
G.-S. Chung
;
A.A. Al-Ghamdi
;
Omar A. Al-Hartomy
;
F. El-Tantawy
;
F. Yakuphanoglu
关键词:
Graphene oxide
;
Schottky
diode
;
Photoconductor
;
Ideality factor
;
Barrier
height
刊名:Solar Energy
出版年:2012
10.
GaN
Schottky
barrier
photodiode
on Si (1 1 1) with low-temperature-grown cap layer
作者:
L.S. Chuah
;
Z. Hassan
;
H. Abu Hassan
;
N.M. Ahmed
关键词:
AlN
;
GaN
;
Photodiode
;
Schottky
barrier
height
;
Thermal annealing
刊名:Journal of Alloys and Compounds
出版年:2009
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