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CNKI期刊论文0611(1)
知网期刊论文(207)
在“
Elsevier电子期刊
”中,
命中:
376
条,耗时:小于0.01 秒
在所有数据库中总计命中:
731
条
1.
Ab-initio study
of
surface
segregation
in aluminum alloys
作者:
Yifa Qin
;
yfqin10s@imr.ac.cn
;
Shaoqing Wang
关键词:
Aluminum
;
Surface
segregation
;
Ab-initio calculation
刊名:Applied Surface Science
出版年:2017
2.
Modelling and experiments for the convecto-diffusive removal
of
impurities
from the solidification front
作者:
J. Altenberend
;
jochen.altenberend@gmail.com
;
Y. Delannoy
;
A. Nehari
;
G. Chichignoud
;
K. Zaidat
关键词:
Solar grade silicon
;
Segregation
;
Silicon refining
;
Turbulence
;
Taylor-Couette flow
刊名:Journal
of
Crystal Growth
出版年:2017
3.
A TEM study
of
Ni interfaces formed during activation
of
SOFC anodes in H
2
: Influence
of
grain boundary symmetry and
segregation
of
impurities
作者:
Q. Jeangros
a
;
b
;
quentin.jeangros@epfl.ch" class="auth_mail" title="E-mail the corresponding author
;
A.B. Aebersold
a
;
C. Hé
;
bert
a
;
J. Van Herle
c
;
A. Hessler-Wyser
a
;
b
关键词:
Solid oxide fuel cells
;
Transmission electron microscopy
;
Diffraction
;
Energy-dispersive X-ray spectroscopy
刊名:Acta Materialia
出版年:2016
4.
Modeling
of
impurities
segregation
phenomenon in the melt crystallization process by the continuous cellular automata technique
作者:
Liliya Shumylyak
a
;
lshumylyak@mail.ru" class="auth_mail" title="E-mail the corresponding author
;
Vladimir Zhikharevich
b
;
vzhikhar@mail.ru" class="auth_mail" title="E-mail the corresponding author
;
Sergiy Ostapov
b
;
sergey.ostapov@gmail.com" class="auth_mail" title="E-mail the corresponding author
关键词:
Cellular automata
;
Phase transition
;
Segregation
;
Concentration overcooling
刊名:Applied Mathematics and Computation
出版年:2016
5.
Stress influence on substitutional impurity
segregation
on dislocation loops in IV-IV semiconductors
作者:
A. Portavoce
a
;
alain.portavoce@im2np.fr" class="auth_mail" title="E-mail the corresponding author
;
J. Perrin Toinin
b
;
K. Hoummada
b
;
L. Raymond
b
;
G. Tré
;
glia
c
关键词:
Silicon
;
Germanium
;
Dislocation
;
Segregation
;
Simulation
刊名:Computational Materials Science
出版年:2016
6.
Atomic-scale
segregation
behavior
of
Sn/Ti and O at Σ3[11¯0](111) grain boundary in niobium
作者:
Zenghui Liu
;
Jiaxiang Shang
;
shangjx@buaa.edu.cn" class="auth_mail" title="E-mail the corresponding author
关键词:
Grain bounday
segregation
;
First-principles
;
Niobium alloys
;
Alloying elements
刊名:Progress in Natural Science
出版年:2016
7.
Effect
of
alternating magnetic field on the removal
of
metal
impurities
in silicon ingot by directional solidification
作者:
Pengting Li
a
;
b
;
Shiqiang Ren
a
;
b
;
Dachuan Jiang
a
;
b
;
Jiayan Li
a
;
b
;
Lei Zhang
c
;
Yi Tan
a
;
b
;
tanyi@dlut.edu.cn" class="auth_mail" title="E-mail the corresponding author
关键词:
A1. Directional solidification
;
A1. Magnetic field
;
B1. Silicon
;
Metal
impurities
;
Diffusion layer
刊名:Journal
of
Crystal Growth
出版年:2016
8.
Effects
of
alloying on the behavior
of
B and S at Σ5 (2 1 0) grain boundary in γ-Fe
作者:
Yuping Li
a
;
b
;
yupingli123@163.com" class="auth_mail" title="E-mail the corresponding author
;
Cheng Han
a
;
b
;
Caili Zhang
a
;
b
;
zcl2016@126.com" class="auth_mail" title="E-mail the corresponding author
;
Kun Jia
a
;
Peide Han
a
;
b
;
Xiaolei Wu
c
关键词:
Alloying
;
Impurities
segregation
;
γ-Fe
;
Grain boundary cohesion
;
DFT
刊名:Computational Materials Science
出版年:2016
9.
Separation behavior
of
impurities
and selenium reduction by the reactive zone refining process using high-frequency induction heating to purify Te
作者:
Moonsoo Shim
a
;
Young-Min Kim
b
;
Huk-Hee Lee
c
;
Soon-Jik Hong
d
;
Jong-Hyeon Lee
a
;
b
;
e
;
jonglee@cnu.ac.kr
关键词:
A1. Directional solidification
;
A1. Purification
;
A1.
Segregation
;
B1. Metals
刊名:Journal
of
Crystal Growth
出版年:2016
10.
Atomic investigation
of
alloying Cr, Ti, Y additions in a grain boundary
of
vanadium
作者:
Pengbo Zhang
a
;
b
;
zhangpb@dlmu.edu.cn" class="auth_mail" title="E-mail the corresponding author
;
Xiaojie Li
b
;
Jijun Zhao
b
;
Pengfei Zheng
c
;
Jiming Chen
c
关键词:
Grain boundary
;
Alloying element
;
Vanadium
;
Embrittlement
刊名:Journal
of
Nuclear Materials
出版年:2016
1
2
3
4
5
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