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在“Elsevier电子期刊”中，命中：16,615条，耗时：0.1189304 秒

在所有数据库中总计命中：48,652条

1.Doping of semiconductors by molecular monolayers: monolayer formation, dopant diffusion and applications

作者：Liang Ye^a ; ^b ; Michel P. de Jong^b ; Tibor Kudernac^a ; Wilfred G. van der Wiel^b ; Jurriaan Huskens^a ; ^{j.huskens@utwente.nl" class="auth_mail" title="E-mail the corresponding author}

关键词：Monolayer doping ; Silicon ; Germanium ; Group III-V semiconductors ; Dopant ; Transistor

刊名：Materials Science in Semiconductor Processing

出版年：2017

2.The FEM analysis of FGM piezoelectric semiconductor problems

作者：J. Sladek^a ; ^{jan.sladek@savba.sk} ; V. Sladek^a ; H.H.-H. Lu^b ; D.L. Young^b

关键词：Finite element method ; Functionally graded materials ; Piezoelectric semiconductors

刊名：Composite Structures

出版年：2017

3.N-type doping strategies for InGaAs

作者：Henry Aldridge Jr^a ; ; Aaron G. Lind^a ; Cory C. Bomberger^b ; Yevgeniy Puzyrev^c ; Joshua M.O. Zide^b ; Sokrates T. Pantelides^c ; Mark E. Law^a ; Kevin S. Jones^a

关键词：III&ndash ; V semiconductors ; Semiconductor processing ; Thermal processing ; Dopant activation ; Dopant diffusion

刊名：Materials Science in Semiconductor Processing

出版年：2017

4.Study on cobalt doped tin based perovskite material with enhanced air stability

作者：Jiongliang Yuan^a ; ^{yuanjiongliang@163.com" class="auth_mail" title="E-mail the corresponding author} ; Bo Li^b ; Cunjiang Hao^c

关键词：Semiconductors ; Tin based perovskite ; Cobalt doping ; Air stability ; Bandgap

刊名：Materials Science in Semiconductor Processing

出版年：2017

5.A study of ultrasonic spray pyrolysis deposited rutile-TiO₂-based metal-semiconductor-metal ultraviolet photodetector

作者：Han-Yin Liu^a ; ^{hyliu@fcu.edu.tw" class="auth_mail" title="E-mail the corresponding author} ; Wei-Hsun Lin^a ; Wen-Ching Sun^b ; Sung-Yen Wei^b ; Sheng-Min Yu^b

关键词：Metal-semiconductor-metal (MSM) ; Photodetector ; Rutile ; Titanium dioxide (TiO2) ; Ultraviolet

刊名：Materials Science in Semiconductor Processing

出版年：2017

6.Variable range hopping and positive magnetoresistance in n type semiconductor CuIn₃Se₅

作者：S.M. Wasim^a ; L. Essaleh^b ; ^{lessaleh@gmail.com} ; ^{l.essaleh@uca.ma} ; G. Marí ; n^c ; J. Galibert^d

关键词：A. semiconductors ; A. electronic materials ; B. semiconductivity ; C. X-ray diffraction ; D. electrical properties ; D. defects ; D. electronic structure

刊名：Materials Research Bulletin

出版年：2017

7.Optical properties of a new Bi₃₈Mo₇O₇₈ semiconductor with fluorite-type δ-Bi₂O₃ structure

作者：Zuoshan Wang^a ; Shala Bi^a ; Yingpeng Wan^a ; Pengjie Huang^b ; Min Zheng^b ; ^{zhengmin@suda.edu.cn}

关键词：Semiconductors ; Bismuth oxide ; Luminescence ; Solar materials ; Photocatalysis ; Optical properties

刊名：Applied Surface Science

出版年：2017

8.Electrical and thermal response of silicon oxycarbide materials obtained by spark plasma sintering

作者：M. Alejandra Mazo^a ; ^{sandra@icv.csic.es} ; Aitana Tamayo^a ; Amador C. Caballero^b ; Juan Rubio^a

关键词：Silicon oxycarbide material ; Spark plasma sintering ; HRTEM ; Electrical conductivity ; Thermal conductivity

刊名：Journal of the European Ceramic Society

出版年：2017

9.Theoretical study of pyrene derivatives as high performance organic semiconductor materials

作者：Ya-Rui Shi ; Hui-ling Wei ; Ya-ting Shi ; Yu-Fang Liu ; ^{liuyufang2005@126.com}

关键词：Organic semiconductor ; Electronic devices ; Pyrene

刊名：Synthetic Metals

出版年：2017

10.Compositionally graded ferroelectrics as wide band gap semiconductors: Electrical domain structures and the origin of low dielectric loss

作者：I.B. Misirlioglu^a ; ^{burc@sabanciuniv.edu" class="auth_mail" title="E-mail the corresponding author} ; S.P. Alpay^b ; ^c

关键词：Graded thin films ; Ferroelectric ; Dielectric constant ; Semiconductor ; Thermodynamics

刊名：Acta Materialia

出版年：2017

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