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知网期刊论文(2)
在“
Elsevier电子期刊
”中,
命中:
7
条,耗时:小于0.01 秒
在所有数据库中总计命中:
2
条
1.
Modeling and analysis of capacitance in consideration of the deformation in RF MEMS shunt switch
作者:
Saurabh Agarwal
;
saurabhagarwalshanu@gmail.com
;
Richik Kashyap
;
Koushik Guha
;
Srimanta
Baishya
关键词:
Microelectromechanical systems
;
Modeling
;
Capacitance
;
Capacitive shunt switch
;
RF MEMS
刊名:Superlattices and Microstructures
出版年:2017
2.
Tri-gate heterojunction SOI Ge-FinFETs
作者:
Rajashree Das
;
rajashree18das@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Rupam Goswami
;
Srimanta
Baishya
关键词:
Heterojunction
;
Single gate material dual dielectric FinFET
;
Dual gate material dual dielectric FinFET
;
DIBL
刊名:Superlattices and Microstructures
出版年:2016
3.
Effect of scaling on noise in Circular Gate TFET and its application as a digital inverter
作者:
Rupam Goswami
;
rup.gos@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Brinda Bhowmick
;
Srimanta
Baishya
关键词:
Circular Gate Tunnel FET
;
Flicker noise
;
Generation-recombination noise
;
Diffusion noise
;
Interface traps
;
Digital inverter
刊名:Microelectronics Journal
出版年:2016
4.
Electrical noise in Circular Gate Tunnel FET in presence of interface traps
作者:
Rupam Goswami
;
rup.gos@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Brinda Bhowmick
;
Srimanta
Baishya
关键词:
Tunnel FET
;
Flicker noise
;
Diffusion noise
;
Generation&ndash
;
recombination noise
;
TCAD
刊名:Superlattices and Microstructures
出版年:2015
5.
A modified capacitance model of RF MEMS shunt switch incorporating fringing field effects of perforated beam
作者:
Koushik Guha
;
koushikguha2009@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Mithlesh Kumar
;
Saurabh Agarwal
;
Srimanta
Baishya
关键词:
Up-state capacitance
;
Down-state capacitance
;
Fringing field capacitance
;
Ligament efficiency
;
Perforated switch
;
RF MEMS
刊名:Solid State Electronics
出版年:2015
6.
A threshold voltage model for short-channel MOSFETs taking into account the varying depth of channel depletion layers around the source and drain
作者:
Srimanta
Baishya
;
Abhijit Mallik
;
Ch
;
an Kumar Sarkar
关键词:
Robots
;
Hierarchical fuzzy control
;
Oscillatory bases
刊名:Microelectronics Reliability
出版年:2008
7.
Subthreshold surface potential and drain current models for short-channel pocket-implanted MOSFETs
作者:
Srimanta
Baishya
;
Abhijit Mallik
;
Ch
;
an Kumar Sarkar
关键词:
Depletion layer depth
;
Pocket implanted (double-halo) MOSFETs
;
Subthreshold surface potential
;
Subthreshold drain current
刊名:Microelectronic Engineering
出版年:2007
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