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CNKI期刊论文0611(730)
标准(4)
在“
Elsevier电子期刊
”中,
命中:
53,227
条,耗时:0.2758617 秒
在所有数据库中总计命中:
167,492
条
1.
Evolution effects of the copper
surface
morphology on the nucleation density and
growth
of graphene domains at different
growth
pressures
作者:
Seyed Mahdi Hedayat
a
;
Javad Karimi-Sabet
b
;
j_karimi@alum.sharif.edu
;
Mojtaba Shariaty-Niassar
a
;
mshariat@ut.ac.ir
关键词:
Cu
surface
morphology
;
Electropolishing
;
Graphene CVD
growth
;
Nucleation density
;
Surface
evolution
;
Growth
pressure
刊名:Applied
Surface
Science
出版年:2017
2.
Miscut dependent
surface
evolution in the process of N-polar
growth
under N-rich condition
作者:
Filip Krzyżewski
a
;
fkrzy@ifpan.edu.pl
;
Magdalena A. Załuska-Kotur
a
;
b
;
zalum@ifpan.edu.pl
;
Henryk Turski
c
;
Marta Sawicka
c
;
Czesław Skierbiszewski
c
关键词:
A1. Diffusion
;
A1.
Growth
models
;
A1.
Surface
structure
;
A3. Molecular beam epitaxy
;
B1. Nitrides
;
B2. Semiconducting III&ndash
;
V materials
刊名:Journal of Crystal
Growth
出版年:2017
3.
Adsorption and interlayer diffusion controlled
growth
and unique
surface
patterned
growth
of polyelectrolyte multilayers
作者:
Jing Yu
;
Brooke M. Meharg
;
Ilsoon Lee
;
leeil@egr.msu.edu
关键词:
Polyelectrolyte multilayers
;
Film
growth
;
Adsorption
;
Interlayer diffusion
;
Surface
morphology
刊名:Polymer
出版年:2017
4.
Step density waves on growing vicinal crystal
surface
s - Theory and experiment
作者:
Bogdan Ranguelov
a
;
rangelov@ipc.bas.bg
;
Pierre Mü
;
ller
b
;
Jean-Jacques Metois
b
;
Stoyan Stoyanov
a
关键词:
A1.
Growth
models
;
A1. Morphological stability
;
A1.
Surface
processes
;
A1.
Surface
structure
;
A2.
Growth
from vapor
;
B2. Semiconducting silicon
刊名:Journal of Crystal
Growth
出版年:2017
5.
Modification of the
surface
morphology of 4H-SiC by addition of Sn and Al in solution
growth
with SiCr solvents
作者:
Naoyoshi Komatsu
a
;
Takeshi Mitani
a
;
t-mitani@aist.go.jp
;
Yuichiro Hayashi
a
;
Tomohisa Kato
a
;
Shunta Harada
b
;
Toru Ujihara
b
;
Hajime Okumura
a
关键词:
A1. Roughening
;
A1. Solvents
;
A1.
Surface
structure
;
A2.
Growth
from solution
;
B1. Silicon carbide
刊名:Journal of Crystal
Growth
出版年:2017
6.
Effects of
surface
reconstruction on the epitaxial
growth
of III-Sb on GaAs using interfacial misfit array
作者:
Bo Wen Jia
;
jiab0001@e.ntu.edu.sg
;
Kian Hua Tan
;
Wan Khai Loke
;
Satrio Wicaksono
;
Soon Fatt Yoon
关键词:
Epitaxial
growth
;
Surface
reconstruction
;
AFM
;
Reciprocal space map
;
TEM
;
Hall measurement
刊名:Applied
Surface
Science
出版年:2017
7.
The impact of the
growth
of thermally grown oxide layer on the propagation of
surface
cracks within thermal barrier coatings
作者:
JunNan Lv
;
XueLing Fan
;
Qun Li
;
qunli@mail.xjtu.edu.cn
关键词:
Thermal barrier coating
;
Thermally grown oxide
;
Surface
crack
;
Material configurational forces
;
Jk-integral
刊名:
Surface
and Coatings Technology
出版年:2017
8.
Nonlinear mechanics of
surface
growth
for cylindrical and spherical elastic bodies
作者:
Fabio Sozio
a
;
b
;
Arash Yavari
b
;
c
;
arash.yavari@ce.gatech.edu
关键词:
Surface
growth
;
Accretion mechanics
;
Geometric mechanics
;
Nonlinear elasticity
;
Residual stress
刊名:Journal of the Mechanics and Physics of Solids
出版年:2017
9.
Different
growth
mechanisms of Ge by Stranski-Krastanow on Si (111) and (001)
surface
s: An STM study
作者:
S.A. Teys
teys@isp.nsc.ru" class="auth_mail" title="E-mail the corresponding author
关键词:
Stranski-Krastanow mechanism
;
Ge-Si
;
Surface
reconstructions
;
Scanning tunneling microscopy
;
Molecular beam epitaxy
刊名:Applied
Surface
Science
出版年:2017
10.
Role of
surface
reconstruction on Stranski-Krastanov
growth
illustrated using a modified solid-on-solid model
作者:
Paramita Ghosh
;
Madhav Ranganathan
;
madhavr@iitk.ac.in
关键词:
A1. Computer Simulation
;
A1. Roughening
;
A1. Stresses
;
A1.
Surface
Processes
;
A3. Molecular beam epitaxy
;
B1. Germanium silicon alloys
刊名:Journal of Crystal
Growth
出版年:2017
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