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内部出版物
CNKI学位论文(20)
知网期刊论文(5)
在“
Elsevier电子期刊
”中,
命中:
7
条,耗时:小于0.01 秒
在所有数据库中总计命中:
25
条
1.
Investigation of heavily nitrogen-doped n
作者:
Noboru Ohtani
;
Masakazu Katsuno
;
Masashi Nakabayashi
;
Tatsuo Fujimoto
;
Hiroshi Tsuge
;
Hirokatsu Yashiro
;
Takashi
Aigo
;
Hosei Hirano
;
Taizo Hoshino
;
Kohei Tatsumi
关键词:
A1. Defects
;
A1. Doping
;
A1. Surface structure
;
A2. Growth from vapor
;
B2. Semiconducting silicon compounds
刊名:Journal of Crystal Growth
出版年:2009
2.
Propagation behavior of threading dislocations during physical vapor transport growth of silicon carbide (SiC) single crystals
作者:
Noboru Ohtani
;
Masakazu Katsuno
;
Hiroshi Tsuge
;
Tatsuo Fujimoto
;
Masashi Nakabayashi
;
Hirokatsu Yashiro
;
Mitsuru Sawamura
;
Takashi
Aigo
and Taizo Hoshino
关键词:
A1. Defects
;
A2. Growth from vapor
;
B1. Silicon carbide
刊名:Journal of Crystal Growth
出版年:2006
3.
Dislocation processes during SiC bulk crystal growth
作者:
Noboru Ohtani
;
Masakazu Katsuno
;
Hiroshi Tsuge
;
Tatsuo Fujimoto
;
Masashi Nakabayashi
;
Hirokatsu Yashiro
;
Mitsuru Sawamura
;
Takashi
Aigo
and Taizo Hoshino
关键词:
Silicon carbide
;
Growth from vapor
;
Dislocations
;
Polytype
刊名:Microelectronic Engineering
出版年:2006
4.
Growth of large high-quality SiC single crystals
作者:
Ohtani
;
Noboru
;
Fujimoto
;
Tatsuo
;
Katsuno
;
Masakazu
;
Aigo
;
Takashi
;
Yashiro
;
Hirokatsu
关键词:
61.70.At
;
61.70.Ng
;
68.35.Bs
;
68.55.Ce
;
A1.Defects
;
A2.Growth from vapor
;
A2.Single crystal growth
;
B1.Inorganic compounds
;
B2.Semiconducting silicon compounds
刊名:Journal of Crystal Growth
出版年:2002
5.
Surface step model for micropipe formation in SiC
作者:
Ohtani
;
Noboru
;
Katsuno
;
Masakazu
;
Fujimoto
;
Tatsuo
;
Aigo
;
Takashi
;
Yashiro
;
Hirokatsu
关键词:
61.70.At
;
68.35.Bs
;
A1.Defects
;
A1.Morphological stability
;
A1.Surface structure
;
A2.Growth from vapor
;
A2.Single crystal growth
;
B2.Semiconducting silicon compounds
刊名:Journal of Crystal Growth
出版年:2001
6.
Structural properties of subgrain boundaries in bulk SiC crystals
作者:
Katsuno
;
Masakazu
;
Ohtani
;
Noboru
;
Aigo
;
Takashi
;
Fujimoto
;
Tatsuo
;
Tsuge
;
Hiroshi
;
Yashiro
;
Hirokatsu
;
et. al.
关键词:
61.10.&minus
i ;
61.70.Jc
;
61.70.Ng
;
Silicon carbide
;
Subgrain boundaries
;
HRXRD
;
Defect-selective etching
刊名:Journal of Crystal Growth
出版年:2000
7.
Step bunching behaviour on the {0001} surface of hexagonal SiC
作者:
Ohtani
;
Noboru
;
Katsuno
;
Masakazu
;
Aigo
;
Takashi
;
Fujimoto
;
Tatsuo
;
Tsuge
;
Hiroshi
;
Yashiro
;
Hirokatsu
;
et. al.
关键词:
68.35.Bs
;
61.50.Cj
;
81.10.Bk
;
Silicon carbide
;
Growth surface morphology
;
Step bunching
;
Step repulsive interaction
刊名:Journal of Crystal Growth
出版年:2000
1
按检索点细分(7)
作者(7)
按出版年细分(7)
2009年(1)
2006年(2)
2002年(1)
2001年(1)
2000年(2)
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