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在“Elsevier电子期刊”中，命中：780条，耗时：0.0529725 秒

在所有数据库中总计命中：413条

1.Trap states extraction of p-channel SnO thin-film transistors based on percolation and multiple trapping carrier conductions

作者：Lei Qiang^a ; Wuguang Liu^a ; ¹ ; Yanli Pei^a ; ^{peiyanli@mail.sysu.edu.cn} ; Gang Wang^a ; ^{stswangg@mail.sysu.edu.cn} ; Ruohe Yao^b

关键词：Trap states ; Tin monoxide ; Temperature effect ; Thin-film transistors (TFTs)

刊名：Solid-State Electronics

出版年：2017

2.Stability enhancement of low temperature thin-film transistors with atomic-layer-deposited ZnO:Al channels

作者：Wen-Jun Liu ; You-Hang Wang ; Li-Li Zheng ; Hong-Liang Lu ; Shi-Jin Ding ; ^{sjding@fudan.edu.cn}

关键词：ZnO ; Al ; Thin-film transistor ; Atomic layer deposition ; Stability

刊名：Microelectronic Engineering

出版年：2017

3.Bottom-gate poly-Si thin-film transistors by nickel silicide seed-induced lateral crystallization with self-aligned lightly doped layer

作者：Sol Kyu Lee ; Ki Hwan Seok ; Hee Jae Chae ; Yong Hee Lee ; Ji Su Han ; Hyeon Ah Jo ; Seung Ki Joo ; ^{skjoo@snu.ac.kr}

关键词：Bottom-gate ; Polycrystalline silicon (poly-Si) ; Thin-film transistor (TFT) ; Self-aligned ; Hot-carrier ; Kink-effect

刊名：Solid-State Electronics

出版年：2017

4.Direct patterning of silver electrodes with 2.4 μm channel length by piezoelectric inkjet printing

作者：Honglong Ning ; Ruiqiang Tao ; Zhiqiang Fang ; Wei Cai ; Jianqiu Chen ; Yicong Zhou ; Zhennan Zhu ; Zeke Zheng ; Rihui Yao ; ^{yaorihui@scut.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Miao Xu ; Lei Wang ; Linfeng Lan ; Junbiao Peng ; ^{psjbpeng@scut.edu.cn" class="auth_mail" title="E-mail the corresponding author}

关键词：Short channel length ; Inkjet printing ; Direct patterning ; Untreated substrate ; Thin film transistors

刊名：Journal of Colloid and Interface Science

出版年：2017

5.High mobility thin film transistors based on zinc nitride deposited at room temperature

作者：Miguel A. Dominguez^a ; ^{madominguezj@gmail.com} ; Jose Luis Pau^b ; ^{joseluis.pau@uam.es} ; Mayte Gó ; mez-Castañ ; o^b ; Jose A. Luna-Lopez^a ; Pedro Rosales^c

关键词：Zinc nitride ; Thin-film transistors ; Room-temperature deposition

刊名：Thin Solid Films

出版年：2016

6.Properties of hafnium-aluminum-zinc-oxide thin films for the application of oxide-transistors

作者：Sang-Hyuk Lee ; Hyun-Sik Jun ; Ju-Hee Park ; Won Kim ; Saeroonter Oh ; Jin-Seok Park ; ^{jinsp@hanyang.ac.kr}

关键词：Hafnium-aluminum-zinc-oxide (HAZO) ; Co-sputtering ; Sputtering power ; Thin film transistors (TFTs) ; Structural property ; Electrical property ; Optical property ; Chemical bonding

刊名：Thin Solid Films

出版年：2016

7.Performance improvement of poly-Si tunnel thin-film transistor by NH₃ plasma treatment

作者：William Cheng-Yu Ma^a ; ^{williammaa@mail.ee.nsysu.edu.tw" class="auth_mail" title="E-mail the corresponding author} ; Yi-Hsuan Chen^b ; Zheng-Yi Lin^a ; Yao-Sheng Huang^a ; Bo-Siang Huang^a ; Zheng-Da Wu^a

关键词：Thin-film transistors (TFTs) ; Tunnel-FETs ; Plasma passivation

刊名：Thin Solid Films

出版年：2016

8.High performance top-gated indium-zinc-oxide thin film transistors with in-situ formed HfO₂ gate insulator

作者：Yang Song^a ; ^{yang_song@brown.edu" class="auth_mail" title="E-mail the corresponding author} ; A. Zaslavsky^a ; ^b ; D.C. Paine^b

关键词：Indium zinc oxide ; Top gate ; In-situ process ; Thin film transistors ; Hafnium ; HfO2 gate insulator

刊名：Thin Solid Films

出版年：2016

9.Atomic layer deposited p-type copper oxide thin films and the associated thin film transistor properties

作者：Wanjoo Maeng^a ; Seung-Hwan Lee^b ; Jung-Dae Kwon^c ; ^{jdkwon@kims.re.kr" class="auth_mail" title="E-mail the corresponding author} ; Jozeph Park^d ; ¹ ; ^{jozeph.park@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Jin-Seong Park^b ; ^{jsparklime@hanyang.ac.kr" class="auth_mail" title="E-mail the corresponding author}

关键词：Copper oxide ; Atomic layer deposition ; Ozone ; Thin film transistors ; p-type ; Annealing

刊名：Ceramics International

出版年：2016

10.Al-doped ZnO thin films deposited by confocal sputtering as electrodes in ZnO-based thin-film transistors

作者：N. Hernandez-Como^a ; ^{nohernandezc@ipn.mx" class="auth_mail" title="E-mail the corresponding author} ; A. Morales-Acevedo^b ; M. Aleman^a ; I. Mejia^c ; M.A. Quevedo-Lopez^c

关键词：Al-doped zinc oxide ; Thin film transistors ; RF sputtering ; Specific contact resistance

刊名：Microelectronic Engineering

出版年：2016

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