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馆藏书目(2)
CNKI学位论文(114)
知网期刊论文(23)
在“
Elsevier电子期刊
”中,
命中:
14
条,耗时:0.02099 秒
在所有数据库中总计命中:
139
条
1.
III-V compound semiconductors: Growth and structures
作者:
Thomas
F
.
Kuech
;
t
fkuech
@wisc.edu" class="auth_mail" title="E-mail the corresponding author
关键词:
epitaxy
;
compound semiconductor
;
III-V semiconductors
;
crystal growth
刊名:Progress in Crystal Growth and Characterization o
f
Materials
出版年:2016
2.
Low temperature growth o
f
GaAs
1?
y
Bi
y
epitaxial layers
作者:
Kamran
F
orghani
;
Amita An
;
Luke J. Mawst
;
Thomas
F
.
Kuech
关键词:
A1. High resolution X-ray di
ff
raction
;
A3. Metalorganic vapor phase epitaxy
;
B1. Bismuth compounds
;
B2. Semiconducting III&ndash
;
V materials
;
B2. Semiconducting ternary compounds
;
B2. Semiconducting Gallium Arsenide
刊名:Journal o
f
Crystal Growth
出版年:2013
3.
Aerial survey and spatial analysis o
f
sources o
f
light pollution in Berlin, Germany
作者:
Helga U.
Kuech
ly
;
Christopher C.M. Kyba
;
Thomas
Ruhtz
;
Carsten Lindemann
;
Christian Wolter
;
J¨¹rgen
F
ischer
;
F
ranz H?lker
关键词:
Light pollution
;
Arti
f
icial lighting
;
Urban analysis
;
Remote sensing
;
GIS
;
Darkness
;
Spatial analysis
;
Light at night
刊名:Remote Sensing o
f
Environment
出版年:2012
4.
Controlled
f
ormation o
f
GaAs pn junctions during hydride vapor phase epitaxy o
f
GaAs
作者:
Kevin L. Schulte
;
William L. Rance
;
Robert C. Reedy
;
Aaron J. Ptak
;
David L. Young
;
Thomas
F
.
Kuech
关键词:
A1. Doping
;
A1. Impurities
;
A1. Inter
f
aces
;
A3. Hydride vapor phase epitaxy
;
B2. Semiconducting gallium arsenide
;
B3. Solar cells
刊名:Journal o
f
Crystal Growth
出版年:2012
5.
Chairpersons' pre
f
ace
作者:
Thomas
F
.
Kuech
;
a
;
kuech
@engr.wisc.edu
刊名:Journal o
f
Crystal Growth
出版年:2011
6.
Multiple paths to nanocrystalline high silica beta zeolite
作者:
Dorothy E.
Kuech
l
;
Annabelle I. Benin
;
Lisa M. Knight
;
Hayim Abrevaya
;
Stephen T. Wilson
;
Wharton Sinkler
;
Thomas
M. Mezza
;
Richard R. Willis
关键词:
Nanozeolite
;
Mechanism
;
Colloidal
;
Template
刊名:Microporous and Mesoporous Materials
出版年:2010
7.
A theoretical comparative study o
f
the sur
f
actant e
ff
ect o
f
Sb and Bi on GaN growth
作者:
Amit A. Gokhale
;
Thomas
F
.
Kuech
;
Manos Mavrikakis
关键词:
A1. Di
ff
usion
;
A1. Kinetics
;
A1. Pre
f
erential sidewall
f
acets
;
A1. Thermodynamics
;
A3. LEO
;
B1. Antimony
;
B1. Bismuth
;
B1. GaN(0 0 0 1)
;
B1.
;
B1. SbN
;
B1. BiN
刊名:Journal o
f
Crystal Growth
出版年:2007
8.
Growth behavior o
f
GaSb by metal–organic vapor-phase epitaxy
作者:
Manish K. Rathi
;
Brian E. Hawkins and
Thomas
F
.
Kuech
关键词:
A1. Adsorption
;
A1. Computer simulation
;
A1. Desorption
;
A1. Growth Models
;
A3. Metal–
;
organic vapor-phase epitaxy
;
B1. Antimonides
刊名:Journal o
f
Crystal Growth
出版年:2006
9.
Sur
f
actant e
ff
ect o
f
Sb on GaN growth
作者:
Amit A. Gokhale
;
Thomas
F
.
Kuech
and Manos Mavrikakis
关键词:
A1. Density
f
unctional theory
;
A1. Di
ff
usion
;
A1. Phase diagram
;
A1. Sur
f
actant
;
A2. LEO
;
B1. Antimony
;
B1. GaN(0 0 0 1)
;
B1. GaN(
f=""/science?_ob=MathURL&_method=retrieve&_udi=B6TJ6-4H9PNCS-3&_mathId=mml11&_user=10&_cdi=5302&_rdo
刊名:Journal o
f
Crystal Growth
出版年:2005
10.
F
ISH banding in tumor cytogenetics
作者:
Thomas
Liehr
;
Madeleine Gross
;
Constanze Karst
;
Melanie Glaser
;
Kristin Mrasek
;
Heike Starke
;
Anja Weise
;
Hasmik Mkrtchyan and Alma
Kuech
ler
刊名:Cancer Genetics and Cytogenetics
出版年:2006
1
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