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内部出版物
在“
Elsevier电子期刊
”中,
命中:
147
条,耗时:小于0.01 秒
1.
Influence of Pre-
trimethylindium
flow treatment on blue light emitting diode
作者:
Bing Xu
;
Jun Liang Zhao
;
Hai Tao Dai
;
Shu Guo Wang
;
Ray-Ming Lin
;
Fu-Chuan Chu
;
Chou-Hsiung Huang
;
Sheng-Fu Yu
;
Xiao Wei Sun
关键词:
Light emitting diodes
;
Trimethylindium
treatment
;
Opto-electronics
刊名:Thin Solid Films
出版年:31 January, 2014
2.
The impact of
trimethylindium
treatment time during growth interruption on the carrier dynamics of InGaN/GaN multiple quantum wells
作者:
Shih-Wei Feng
a
;
swfeng@nuk.edu.tw"" rel=""nofollow
;
Hung-Cheng Lin
b
;
Jen-Inn Chyi
b
;
Chin-Yi Tsai
a
;
C.J. Huang
a
;
Hsiang-Chen Wang
c
;
Fann-Wei Yang
d
;
Yen-Sheng Lin
e
关键词:
Trimethylindium
(TMIn) treatment
;
Growth interruption
;
InGaN/GaN
;
Indium gallium nitride
;
Gallium nitride
;
Multiple quantum wells
;
Carrier dynamic
;
Photoluminescence
刊名:Thin Solid Films
出版年:2011
3.
Fabrication of m-axial InGaN nanocolumn arrays on silicon substrates using triethylgallium precursor chemical vapor deposition approach
作者:
Chia-Ming Liu
a
;
Yian Tai
a
;
ytai@mail.ntust.edu.tw" class="auth_mail
;
Kuei-Hsien Chen
b
;
Li-Chyong Chen
c
关键词:
InGaN
;
m-Axial
;
MOCVD
;
Nanocolumn
;
Triethylgallium
刊名:Applied Surface Science
出版年:April, 2014
4.
Optical properties of InGaN/GaN multiple quantum wells with
trimethylindium
treatment during growth interruption
作者:
Shih-Wei Feng
a
;
swfeng@nuk.edu.tw"" rel=""nofollow
;
Chin-Yi Tsai
a
;
Hsiang-Chen Wang
b
;
Hung-Cheng Lin
c
;
Jen-Inn Chyi
c
关键词:
B1. TMIn treatment
;
A2. Growth interruption
;
B1. InGaN/GaN multiple quantum wells
;
B2. Solid-state lighting
;
A1. V-shaped defect
;
B1. Green InGaN LED
刊名:Journal of Crystal Growth
出版年:2011
5.
MOVPE Growth of In
x
Ga
1?
x
N (x?¡«?0.4) and Fabrication of Homo-junction Solar Cells
作者:
Md. Rafiqul Islam
1
;
rafiq043@yahoo.com
;
Md. Rejvi Kaysir
1
;
Md. Jahirul Islam
1
;
A. Hashimoto
2
;
A. Yamamoto
2
关键词:
InGaN
;
Metal organic vapor phase epitaxy (MOVPE)
;
Growth
;
Film quality
;
Doping
;
p&ndash
;
n junction
刊名:Journal of Materials Science & Technology
出版年:2013
6.
AP-MOVPE GaInSb: Influence of V/III ratio on quality and indium incorporation
作者:
S.S. Miya
;
senzo.miya@nmmu.ac.za
;
V. Wagener
;
J.R. Botha
关键词:
A2. Growth from vapour
;
A3. Metal organic vapour phase epitaxy
;
B1. Antimonides
;
B2. Semiconducting III&ndash
;
V materials
刊名:Journal of Crystal Growth
出版年:2013
7.
Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors
作者:
Masanobu Hiroki
;
Yasuhiro Oda
;
Noriyuki Watanabe
;
Narihiko Maeda
;
Haruki Yokoyama
;
Kazuhide Kumakura
;
Hideki Yamamoto
关键词:
A1. Semiconducting III&ndash
;
V materials
;
A2. Metalorganic vapor phase epitaxy
;
B1. Nitrides
;
B2. Semiconducting indium compounds
刊名:Journal of Crystal Growth
出版年:2013
8.
Accurate vapor pressure equation for
trimethylindium
in OMVPE
作者:
Deodatta V. Shenai-Khatkhate
;
Ronald L. DiCarlo Jr.
;
Robert A. Ware
关键词:
A1. Vapor pressure
;
A3. Metalorganic vapor phase epitaxy
;
A3. Organomettalic vapor phase epitaxy
;
B1. Precursors
;
B1. Metalorganics
;
B1.
Trimethylindium
刊名:Journal of Crystal Growth
出版年:2008
9.
Tailoring the in-plane epitaxial relationship of InN films on (1 1 1)SrTiO
3
substrates by substrate pretreatment
作者:
C.H. Jia
a
;
b
;
Y.H. Chen
a
;
yhchen@red.semi.ac.cn
;
B. Zhang
a
;
X.L. Liu
a
;
S.Y. Yang
a
;
W.F. Zhang
b
;
Z.G. Wang
a
关键词:
In-plane orientation
;
InN
;
SrTiO3
;
MOCVD
刊名:Applied Surface Science
出版年:2012
10.
Optimization of growth parameters for MOVPE-grown GaSb and Ga
1?span style='font-style: italic'>x
In
x
Sb
作者:
S.S. Miya
;
V. Wagener
;
J.R. Botha
;
reinhardt.botha@nmmu.ac.za
关键词:
Photoluminescence
;
MOVPE
;
GaInSb
;
Triethylgallium
;
Atmospheric pressure
刊名:Physica B
出版年:2012
1
2
3
4
5
6
7
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