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CNKI学位论文(42)
知网期刊论文(4)
在“
Elsevier电子期刊
”中,
命中:
10
条,耗时:0.0309855 秒
在所有数据库中总计命中:
46
条
1.
Generation of uniaxial tensile strain of over 1 % on a Ge substrate for short-channel strained Ge n-type Metal-Insulator-Semiconductor Field-Effect Transistors with SiGe stressors
作者:
Yoshihiko Moriyama
;
yoshihiko3.moriyama@toshiba.co.jp
;
Yuuichi Kamimuta
;
Keiji Ikeda
;
Tsutomu
Tezuka
关键词:
Strained Ge
;
Uniaxial strain
;
Anisotropic etching
;
Embedded SiGe stressor
;
Ge nMISFET
刊名:Thin Solid Films
出版年:2012
2.
Planar defect formation mechanism in Ge-rich SiGe-on-insulator substrates during Ge condensation process
作者:
Norio Hirashita
;
Shu Nakaharai
;
Yoshihiko Moriyama
;
Koji Usuda
;
Tsutomu
Tezuka
;
Naoharu Sugiyama
;
Shin-ichi Takagi
关键词:
SiGe
;
Ge condensation
;
Plastic deformation
;
Multiple slips
;
Microtwin
;
Double-cross-slip mechanism
刊名:Thin Solid Films
出版年:2008
3.
Thin-body Ge-on-insulator p-channel MOSFETs with Pt germanide metal source/drain
作者:
Tatsuro Maeda
;
Keiji Ikeda
;
Shu Nakaharai
;
Tsutomu
Tezuka
;
Naoharu Sugiyama
;
Yoshihiko Moriyama and Shinichi Takagi
关键词:
Ge
;
Schottky barrier
;
Thin-body Ge-on-insulator
;
MOSFET
刊名:Thin Solid Films
出版年:2006
4.
Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process
作者:
Tsutomu
Tezuka
;
Yoshihiko Moriyama
;
Shu Nakaharai
;
Naoharu Sugiyama
;
Norio Hirashita
;
Eiji Toyoda
;
Yoshiji Miyamura and Shin-ichi Takagi
关键词:
Silicon germanium
;
Silicon-on-insulator (SOI)
;
Dislocation
;
Lattice relaxation
刊名:Thin Solid Films
出版年:2006
5.
Preparation of proton conducting composites by mechanical milling for phosphorus-containing solid acids
作者:
Atsunori Matsuda
;
Teruaki
Tezuka
;
Yoshitaka Nono
;
Kiyoharu Tadanaga
;
Tsutomu
Minami and Masahiro Tatsumisago
关键词:
Solid acid
;
Phosphate
;
Mechanical milling
;
Proton conduction
;
Chemical durability
;
Medium temperature
刊名:Solid State Ionics
出版年:2005
6.
Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation
作者:
Usuda
;
Koji
;
Mizuno
;
Tomohisa
;
Tezuka
;
Tsutomu
;
Sugiyama
;
Naoharu
;
Moriyama
;
Yoshihiko
;
Nakaharai
;
Shu
;
et. al.
关键词:
Silicon germanium
;
Strain
;
Relaxation
;
Raman spectroscopy
;
Silicon on insulator (SOI)
刊名:Applied Surface Science
出版年:2004
7.
Fabrication and device characteristics of strained-Si-on-insulator (strained-SOI) CMOS
作者:
Takagi
;
Shin-ichi
;
Mizuno
;
Tomohisa
;
Tezuka
;
Tsutomu
;
Sugiyama
;
Naoharu
;
Numata
;
Toshinori
;
et. al.
关键词:
85.30.T
;
68.60.B
;
73.40
;
81.15
;
Strained Si
;
SOI
;
SiGe
;
Mobility
;
CMOS
刊名:Applied Surface Science
出版年:2004
8.
Cloning, expression and characterization of a poly(3-hydroxybutyrate) depolymerase from Marinobacter sp. NK-1
作者:
Kasuya
;
Ken-ichi
;
Takano
;
Tsutomu
;
Tezuka
;
Yoko
;
Hsieh
;
W.-C.
;
Mitomo
;
Hiroshi
;
Doi
;
Yoshiharu
关键词:
Marinobacter
;
P(3HB) depolymerase
;
SBD
;
GST
;
Cadherin-type linker domain
刊名:International Journal of Biological Macromolecules
出版年:2003
9.
Experimental evidence of valence band deformation due to strain in inverted hole channel of strained-Si pMOSFETs
作者:
Tezuka
;
Tsutomu
;
Kurobe
;
Atsushi
;
Sugiyama
;
Naoharu
;
Takagi
;
Shin-ichi
关键词:
Strained-Si
;
SiGe
;
Metal-oxide-semiconductor field-effect transistor
;
Hall factor
;
Valence band
;
Ultra high vacuum chemical vapor deposition
刊名:Thin Solid Films
出版年:2000
10.
Fabrication of nano-crystal silicon on SiO
2
using the agglomeration process
作者:
Sugiyama
;
Naoharu
;
Tezuka
;
Tsutomu
;
Kurobe
;
Atsushi
关键词:
Nano-crystal
;
Quantum dot
;
Agglomeration
刊名:Journal of Crystal Growth
出版年:1998
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