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CNKI会议论文(1)
CNKI学位论文(138)
知网期刊论文(73)
在“
Elsevier电子期刊
”中,
命中:
15
条,耗时:0.1119457 秒
在所有数据库中总计命中:
212
条
1.
High
performance Ge
ultra
-shallow junctions fabricated by a novel formation technique featuring spin-on dopant and laser annealing for sub-10 nm technology applications
作者:
Junkang Li
a
;
Ran Cheng
a
;
Chang Liu
a
;
c
;
Pengzhan Zhang
c
;
Jiwu Lu
a
;
Kunji Chen
c
;
Rui Zhang
a
;
Yi Zhao
a
;
b
;
yizhao@zju.edu.cn
关键词:
Laser annealing
;
Spin-on dopant
;
Germanium
;
Junction
刊名:Microelectronic Engineering
出版年:2017
2.
InGaAs/InP heterojunction-channel tunneling field-effect transistor for
ultra
-low operating and standby power application below supply voltage of 0.5聽V
作者:
Kyung Rok Kim
;
Young Jun Yoon
;
Seongjae Cho
;
Jae Hwa Seo
;
Jung-Hee Lee
;
Jin-Hyuk Bae
;
Eou-Sik Cho
;
In Man Kang
关键词:
Heterojunction
;
Tunneling field-effect transistor
;
Subthreshold swing
;
Current
ratio
;
Low operating power
;
High
speed
刊名:
Current
Applied Physics
出版年:November, 2013
3.
Transfer-free grown bilayer graphene transistors for digital applications
作者:
Pia Juliane Wessely
a
;
pj.wessely@iht.tu-darmstadt.de
;
Frank Wessely
a
;
Emrah Birinci
a
;
Bernadette Riedinger
b
;
Udo Schwalke
a
关键词:
Bilayer graphene transistor
;
Transfer-free growth on insulator
;
Ultra
-
high
on/off-
current
ratio
;
Full silicon CMOS compatible
刊名:Solid-State Electronics
出版年:2013
4.
Silicon-CMOS compatible in-situ CCVD grown graphene transistors with
ultra
-
high
on/off-
current
ratio
作者:
Pia Juliane Wessely
a
;
pj.wessely@iht.tu-darmstadt.de
;
Frank Wessely
a
;
1
;
wessely@iht.tu-darmstadt.de
;
Emrah Birinci
a
;
2
;
birinci@iht.tu-darmstadt.de
;
Karsten Beckmann
a
;
2
;
beckmann@iht.tu-darmstadt.de
;
Bernadette Riedinger
b
;
3
;
bernadette.riedinger@iwm.fraunhofer.de
;
Udo Schwalke
a
;
4
;
schwalke@iht.tu-darmstadt.de
刊名:Physica E
出版年:2012
5.
Embedded-Ge source and drain in InGaAs/GaAs dual channel MESFET
作者:
Shang-Chao Hung
;
Qiuping Luan
;
Hau-Yu Lin
;
Shuguang Li
;
Shoou-Jinn Chang
关键词:
III&ndash
V ;
InGaAs MESFET
;
Heterostructure
;
Embedded-Ge S/D
刊名:
Current
Applied Physics
出版年:2013
6.
Depth-controllable
ultra
shallow Indium Gallium Zinc Oxide/Gallium Arsenide hetero junction diode
作者:
Seong-Uk Yang
a
;
Seung-Ha Choi
a
;
Jongtaek Lee
a
;
Jeehwan Kim
b
;
Woo-Shik Jung
c
;
Hyun-Yong Yu
d
;
Yonghan Roh
a
;
Jin-Hong Park
a
;
jhpark9@skku.edu
关键词:
Gallium arsenide
;
IGZO
;
Hetero-junction
刊名:Journal of Alloys and Compounds
出版年:2013
7.
Enhancing the performance of organic thin-film transistors using an organic-doped inorganic buffer layer
作者:
Shui-Hsiang Su
;
shsu@isu.edu.tw
;
Chung-Ming Wu
;
Shu-Yi Kung
;
Meiso Yokoyama
关键词:
Organic thin-film transistors
;
Buffer layer
;
Interface dipole
刊名:Thin Solid Films
出版年:2013
8.
Enhancement of electrical properties in pentacene-based thin-film transistors using a lithium fluoride modification layer
作者:
Dei-Wei Chou
a
;
Yu-Ju Lin
b
;
Jhih-Hao Wei-Chin
b
;
Yu-Chang Li
b
;
Yeong-Her Wang
b
;
;
YHW@eembox.ncku.edu.tw
关键词:
Organic thin film transistor
;
Pentacene
;
LiF
;
Electrodes
;
On/off
current
ratio
;
Mobility
刊名:Solid-State Electronics
出版年:2011
9.
Air stable organic complementary inverter with
high
and balance noise margin based on polymer/metal oxide hybrid gate dielectrics
作者:
Ting-Hsiang Huang
;
Hsin-Cheng Lai
;
Bo-Jie Tzeng
;
Zingway Pei
;
zingway@dragon.nchu.edu.tw
关键词:
Air-stable
;
Organic complementary inverter
;
Balanced noise margin
刊名:Organic Electronics
出版年:2012
10.
Dual-gate field effect transistor based on ZnO nanowire with
high
-K gate dielectrics
作者:
Zongni Yao
;
Weijie Sun
;
Wuxia Li
;
Haifang Yang
;
Junjie Li
;
Changzhi Gu
关键词:
ZnO nanowire
;
Field&ndash
;
effect transistor
;
Dual gate
;
High
-k dielectrics
刊名:Microelectronic Engineering
出版年:2012
1
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