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CNKI期刊论文0611(2)
知网期刊论文(348)
在“
Elsevier电子期刊
”中,
命中:
7
条,耗时:小于0.01 秒
在所有数据库中总计命中:
524
条
1.
Removal rate and surface quality of the GLSI silicon substrate during the CMP process
作者:
Jiao Hong
;
hongjiao072095@163.com
;
Xinhuan
Niu
;
xh
niu
@hebut.edu.cn
;
Yuling Liu
;
Chenwei Wang
;
Baoguo Zhang
;
Ming Sun
;
Juan Wang
;
Liying Han
;
Wenqian Zhang
关键词:
Silicon substrate CMP
;
Alkaline slurry
;
Silicon removal rate
;
Surface roughness
;
Haze
刊名:Microelectronic Engineering
出版年:2017
2.
A study on exploring the alkaline copper CMP slurry without inhibitors to achieve high planarization efficiency
作者:
Xiaodong Luan
;
luanyz1988@126.com" class="auth_mail" title="E-mail the corresponding author
;
Yuling Liu
;
Chenwei Wang
;
Xinhuan
Niu
;
Juan Wang
;
Wenqian Zhang
关键词:
Planarization efficiency
;
Chemical mechanical planarization (CMP)
;
FA/O chelating agent
;
Inhibitors
;
Chemical activation energy
刊名:Microelectronic Engineering
出版年:2016
3.
A study on the comparison of CMP performance between a novel alkaline slurry and a commercial slurry for barrier removal
作者:
Chenwei Wang
;
Yuling Liu
;
Jianying Tian
;
Baohong Gao
;
Xinhuan
Niu
关键词:
Barrier CMP
;
Novel alkaline slurry
;
By comparison
;
Surface roughness
;
Dishing
;
Erosion
刊名:Microelectronic Engineering
出版年:2012
4.
Anisotropy of the Seebeck coefficient in Czochralski grown p-type SiGe single crystal
作者:
Jiang
;
Zhongwei
;
Zhang
;
Weilian
;
Yan
;
Liqin
;
Niu
;
Xinhuan
关键词:
SiGe single crystal
;
p-Type
;
Seebeck coefficient
;
Anisotropy
刊名:Materials Science & Engineering B
出版年:2005
5.
Distribution of Ge in high concentration Ge-doped Czochralski-Si crystal
作者:
Niu
;
Xinhuan
;
Zhang
;
Weilian
;
Lu
;
Guoqi
;
Jiang
;
Zhongwei
关键词:
81.10.Fq
;
61.66.Dk
;
81.30.Fb
;
A1. Distribution of impurity
;
A1. Doping
;
A1. Effective segregation coefficient (
K
e
)
;
A2. Czochralski method
;
A2. Single crystal growth
;
B1. SiGe bulk single crystal
刊名:Journal of Crystal Growth
出版年:2004
6.
FTIR spectroscopy of high concentration Ge-doped Czochralski-Si
作者:
Niu
;
Xinhuan
;
Zhang
;
Weilian
;
Zhang
;
Enhuai
;
Sun
;
Junsheng
;
Lu
;
Guoqi
关键词:
81.10.Fq
;
81.05.Hd
;
81.30.Fb
;
A1. Crystal date
;
A1. Doping
;
A1. FTIR-spectroscopy
;
A2. Crystal growth
;
A2. Czochralski method
;
B1. SiGe single crystal
刊名:Journal of Crystal Growth
出版年:2004
7.
Infrared measurement of Ge concentration in CZ??????Si
作者:
Jiang
;
Zhongwei
;
Zhang
;
Weilian
;
Niu
;
Xinhuan
;
Yan
;
Liqin
刊名:Journal of Crystal Growth
出版年:2005
1
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