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CNKI学位论文(94)
知网期刊论文(76)
在“
Elsevier电子期刊
”中,
命中:
60
条,耗时:小于0.01 秒
在所有数据库中总计命中:
170
条
1.
Characteristics and electrical
p
ro
p
erties of reactively s
p
uttered
AlInGaN
films from three different Al
0.05
In
x
Ga
0.95−x
N targets with x=0.075, 0.15, and 0.25
作者:
Kaifan Lin
;
Dong-Hau Kuo
p>
;
p>
p>dhkuo@mail.ntust.edu.tw" class="auth_mail" title="E-mail the corres
p
onding author
p>
关键词:
AlInGaN
;
Thin film
;
S
p
uttering
;
Electrical
p
ro
p
erty
;
High turn-on voltage
刊名:Materials Science in Semiconductor
P
rocessing
出版年:2017
2.
Room tem
p
erature hydrogen gas sensing characteristics of
p
orous quaternary
AlInGaN
film
p
re
p
ared via UV-assisted
p
hoto-electrochemical etching
作者:
Hock Jin Quah
p>a
p>
;
Naser Mahmoud Ahmed
p>b
p>
;
Norzaini Zainal
p>a
p>
;
Fong Kwong Yam
p>b
p>
;
Zainuriah Hassan
p>a
p>
p>
;
p>
p>zai@usm.my" class="auth_mail" title="E-mail the corres
p
onding author
p>
;
Way Foong Lim
p>a
p>
p>
;
p>
p>wayfoong317@yahoo.com.sg" class="auth_mail" title="E-mail the corres
p
onding author
p>
p>
;
p>
p>way_foong@usm.my" class="auth_mail" title="E-mail the corres
p
onding author
p>
关键词:
P
orous
AlInGaN
;
Semiconductors
;
Sensors
;
Ultraviolet-assisted
p
hoto-electrochemical etching
;
Hydrogen
刊名:Su
p
erlattices and Microstructures
出版年:2016
3.
Effects of growth tem
p
erature on characteristics of Mg-delta-do
p
ed
p
-
AlInGaN
e
p
i-layers
作者:
Zili Wu
p>a
p>
;
Xiong Zhang
p>a
p>
p>
;
p>
p>xzhang62@aliyun.com" class="auth_mail" title="E-mail the corres
p
onding author
p>
;
Tianhui Liang
p>a
p>
;
Zhe Chuan Feng
p>b
p>
;
Yi
p
ing Cui
p>a
p>
关键词:
MOCVD
;
p
-
AlInGaN
;
Mg-delta-do
p
ing
;
Mg-H com
p
lex
;
Hole concentration
刊名:Su
p
erlattices and Microstructures
出版年:2016
4.
Homogeneity and com
p
osition of
AlInGaN
: A multi
p
robe nanostructure study
作者:
Florian F. Krause
p>a
p>
p>
;
p>
p>f.krause@if
p
.uni-bremen.de" class="auth_mail" title="E-mail the corres
p
onding author
p>
;
Jan-
P
hili
pp
Ahl
p>b
p>
;
Darius Tytko
p>c
p>
;
P
yuck-Pa Choi
p>c
p>
;
Ricardo Egoavil
p>d
p>
;
Marco Schowalter
p>a
p>
;
Thorsten Mehrtens
p>a
p>
;
Knut Mü
;
ller-Cas
p
ary
p>a
p>
;
Johan Verbeeck
p>d
p>
;
Dierk Raabe
p>c
p>
;
Joachim Hertkorn
p>b
p>
;
Karl Engl
p>b
p>
;
Andreas Rosenauer
p>a
p>
关键词:
HAADF STEM
;
AlInGaN
;
Homogeneity
;
InAlGaN
;
EDX
;
A
P
T
;
AlGaInN
刊名:Ultramicrosco
p
y
出版年:2015
5.
Droo
p
-multimode trade-off in GaN-InGaN LEDs: Effect of
p
olarization-matched
AlInGaN
blocking layers
作者:
Vikas
P
endem
p>a
p>
p>
;
p>
p>b
p>
p>
;
p>
p>vikas6@outlook.com" class="auth_mail" title="E-mail the corres
p
onding author
p>
;
Sonachand Adhikari
p>a
p>
p>
;
p>
p>b
p>
;
Manish Mathew
p>a
p>
;
Sumitra Singh
p>a
p>
p>
;
p>
p>b
p>
;
Suchandan
P
al
p>a
p>
p>
;
p>
p>b
p>
关键词:
Droo
p
cut-off condition (DCC)
;
Efficiency droo
p
;
Internal quantum efficiency (IQE)
;
Light-emitting diode (LED)
;
Multimode cut-off condition (MCC)
;
P
olarization-matched
AlInGaN
刊名:Su
p
erlattices and Microstructures
出版年:2015
6.
High-efficiency of
AlInGaN
/Al(In)GaN-delta AlGaN quantum wells for dee
p
-ultraviolet emission
作者:
Hosni Saidi
p>a
p>
p>
;
p>
p>hosni.saidi@yahoo.fr" class="auth_mail" title="E-mail the corres
p
onding author
p>
;
Said Ridene
p>a
p>
p>
;
p>
p>b
p>
关键词:
Large o
p
tical gain
;
Al(In)GaN-delta AlGaN quantum wells laser active regions
;
Dee
p
-ultraviolet emission
刊名:Su
p
erlattices and Microstructures
出版年:2016
7.
Structural and o
p
tical investigation of
p
orous quaternary Al
0.10
In
0.10
Ga
0.80
N films
p
roduced via ultraviolet-assisted
p
hoto-electrochemical etching in acidic solutions
作者:
Hock Jin Quah
p>a
p>
p>
;
p>
p>b
p>
;
Way Foong Lim
p>a
p>
p>
;
p>
p>b
p>
p>
;
p>
p>way_foong@usm.my" class="auth_mail" title="E-mail the corres
p
onding author
p>
p>
;
p>
p>wayfoong317@yahoo.com.sg" class="auth_mail" title="E-mail the corres
p
onding author
p>
;
Zainuriah Hassan
p>a
p>
p>
;
p>
p>b
p>
p>
;
p>
p>zai@usm.my" class="auth_mail" title="E-mail the corres
p
onding author
p>
;
Fong Kwong Yam
p>a
p>
;
Norzaini Zainal
p>a
p>
关键词:
P
hoto-electrochemical
;
P
orous
;
AlInGaN
;
Mechanism
;
Strain analysis
;
P
hotoluminescence
刊名:Journal of Alloys and Com
p
ounds
出版年:2016
8.
Structural and o
p
tical
p
ro
p
erties of Si-do
p
ed Al
0.08
In
0.08
Ga
0.84
N thin films grown on different substrates for o
p
toelectronic devices
作者:
Alaa Jabbar Ghazai
p>a
p>
p>
;
p>
p>b
p>
p>
;
p>
p>alaa
p
hys74@gmail.com" class="auth_mail" title="E-mail the corres
p
onding author
p>
;
Haslan Abu Hassan
p>b
p>
;
Zanuri Bint Hassan
p>b
p>
关键词:
AlInGaN
quaternary
;
XRD
;
P
L
;
Strain
;
Si-do
p
ed
刊名:Su
p
erlattices and Microstructures
出版年:2016
9.
Influence of TMIn flow rate on structural and o
p
tical quality of
AlInGaN
/GaN e
p
ilayers grown by MOCVD
作者:
R. Loganathan
p>logu73511@gmail.com" class="auth_mail" title="E-mail the corres
p
onding author
p>
;
K.
P
rabakaran
;
S.
P
radee
p
;
S. Surender
;
Shubra Singh
;
K. Baskar
p>
;
p>
p>drbaskar2009@gmail.com" class="auth_mail" title="E-mail the corres
p
onding author
p>
关键词:
Nitride materials
;
O
p
tical materials
;
Va
p
or de
p
osition
;
AFM
;
Luminescence
刊名:Journal of Alloys and Com
p
ounds
出版年:2016
10.
Effect of different EBL structures on dee
p
violet InGaN laser diodes
p
erformance
作者:
Gh. Alahyarizadeh
p>a
p>
p>
;
p>
p>g_alahyarizadeh@yahoo.com" class="auth_mail" title="E-mail the corres
p
onding author
p>
;
M. Amirhoseiny
p>a
p>
p>
;
p>
p>b
p>
;
Z. Hassan
p>c
p>
关键词:
InGaN DQW laser diode
;
Quantum well
;
Electron blocking layer
;
Quaternary
;
Numerical simulation
刊名:O
p
tics & Laser Technology
出版年:2016
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