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知网期刊论文(6532)
在“
Elsevier电子期刊
”中,
命中:
1,775
条,耗时:0.0499762 秒
在所有数据库中总计命中:
19,976
条
1.
Complicated behaviors and bifurcation
mechanism
of the periodic parameter-
switching
Chen system
作者:
Chun Zhang
a
;
;
Xiu-jing Han
b
;
Qinsheng Bi
b
关键词:
Switched system
;
Floquet multiplies
;
Symmetric
switching
oscillation
;
Bifurcation
mechanism
刊名:Optik - International Journal for Light and Electron Optics
出版年:2017
2.
Bipolar resistive
switching
and conduction
mechanism
of an Al/ZnO/Al-based memristor
作者:
Fatih Gul
a
;
fatihgul@atauni.edu.tr
;
Hasan Efeoglu
a
;
b
关键词:
Memristor
;
Zinc oxide
;
Bipolar resistive
switching
;
Schottky emission
;
Oxygen vacancies
刊名:Superlattices and Microstructures
出版年:2017
3.
Memory
switching
and the
switching
mechanism
of Se
60
Ge
40
and Se
60
Ge
36
In
4
phase change alloys
作者:
A.M. Shakra
;
amshakra@yahoo.com
关键词:
Chalcogenide semiconductor
;
Memory
switching
;
Electrothermal model
;
Effect of In addition to SeGe composition
刊名:Journal of Alloys and Compounds
出版年:2017
4.
Uniform resistive
switching
properties of fully transparent TiO
2
-based memory devices
作者:
Lilan Zou
a
;
18312015139@163.com
;
Wei Hu
b
;
Wei Xie
c
;
Dinghua Bao
c
;
stsbdh@mail.sysu.edu.cn
关键词:
Resistive
switching
;
Transparent device
;
TiO2 film
;
Conductive
mechanism
刊名:Journal of Alloys and Compounds
出版年:2017
5.
Investigations of domain
switching
and lattice strains in (Na,K)NbO
3
-based lead-free ceramics across orthorhombic-tetragonal phase boundary
作者:
Jian Fu
a
;
Ruzhong Zuo
a
;
piezolab@hfut.edu.cn" class="auth_mail" title="E-mail the corresponding author
;
rzzuo@hotmail.com" class="auth_mail" title="E-mail the corresponding author
;
Yudong Xu
a
;
Jing-Feng Li
b
;
Min Shi
a
关键词:
Piezoelectricity
;
Strain
;
X-ray diffraction
;
Domain
switching
刊名:Journal of the European Ceramic Society
出版年:2017
6.
Detection of resistive
switching
behavior based on the Al
2
O
3
/ZnO/Al
2
O
3
structure with alumina buffers
作者:
Q. Qiao
a
;
D. Xu
a
;
Y.W. Li
a
;
ywli@ee.ecnu.edu.cn
;
J.Z. Zhang
a
;
Z.G. Hu
a
;
J.H. Chu
a
;
b
关键词:
Non-polar resistive
switching
;
Transition metal oxide
;
Sandwich structure
;
Buffer layer
刊名:Thin Solid Films
出版年:2017
7.
An extension of the Néel-Brown model for systems with multiple
switching
pathways
作者:
Arnab Roy
;
P.S. Anil Kumar
;
anil@physics.iisc.ernet.in" class="auth_mail" title="E-mail the corresponding author
关键词:
Né
;
el-Brown model
;
Switching
field distribution
;
Permalloy
;
Planar Hall effect
刊名:Journal of Magnetism and Magnetic Materials
出版年:2017
8.
Light controlled resistive
switching
and photovoltaic effects in ferroelectric 0.5Ba(Zr
0.2
Ti
0.8
)O
3
-0.5(Ba
0.7
Ca
0.3
)TiO
3
thin films
作者:
J.P.B. Silva
a
;
b
;
josesilva@fisica.uminho.pt" class="auth_mail" title="E-mail the corresponding author
;
K. Kamakshi
a
;
b
;
c
;
K.C. Sekhar
a
;
d
;
X.R. Nó
;
voa
e
;
E.C. Queiró
;
s
f
;
J. Agostinho Moreira
b
;
A. Almeida
b
;
M. Pereira
a
;
P.B. Tavares
f
;
M.J.M. Gomes
a
关键词:
Light controlled resistive
switching
;
Photovoltaic effect
;
Ferroelectricity
;
(0.5BZT-0.5BCT) thin films
刊名:Journal of the European Ceramic Society
出版年:2017
9.
Low voltage bipolar resistive
switching
in self-assembled PVDF nanodot network in capacitor like structures on Au/Cr/Si with Hg as a top electrode
作者:
K. Pramod
;
R.B. Gangineni
;
rameshg.phy@pondiuni.edu.in
;
rameshcu@gmail.com
关键词:
PVDF thin films
;
Self-assembled nanodots
;
Bipolar resistive
switching
刊名:Organic Electronics
出版年:2017
10.
A novel type of tunable magnetorheological dampers operated by permanent magnets
作者:
Wan Ho Kim
a
;
Jhin Ha Park
a
;
Suresh Kaluvan
a
;
Yang-Sup Lee
b
;
Seung-Bok Choi
a
;
seungbok@inha.ac.kr
Author Vitae
关键词:
Magnetorheological (MR) fluid
;
MR damper
;
Permanent magnet based MR (PMMR) damper
;
Magnetization area
;
Switching
mechanism
;
Cylinder shape
刊名:Sensors and Actuators A: Physical
出版年:2017
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