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CNKI学位论文(50)
知网期刊论文(2)
在“
Elsevier电子期刊
”中,
命中:
27
条,耗时:0.0129936 秒
在所有数据库中总计命中:
52
条
1.
Effect of Built-in Electric Field on Miniband Structure and Carrier Nonradiative Recombination in InGaAs/GaAsP Superlattice Investigated Using
Photoreflectance
and Photoluminescence Spectroscopy
作者:
Tsubasa Nakamura
a
;
h
a1
1028@student.miyazaki-u.ac.jp
;
Kouki Matsuochi
a
;
Hidetoshi Suzuki
a
;
Tetsuo Ikari
a
;
Kasidit Toprasertpong
b
;
Masakazu Sugiyama
b
;
Yoshiaki Nakano
c
;
Atsuhiko Fukuyama
a
关键词:
Superlattice
;
Miniband
;
Built-in electric field
;
Photoreflectance
;
Photoluminescence
刊名:Energy Procedia
出版年:2016
2.
Strain study of GaAs/In
x
Ga
1 − x
As/GaAs structures grown by MOVPE
作者:
M. Bedoui
;
M.M. Habchi
;
I. Moussa
;
A. Rebey
;
ahmed.rebey@fsm.rnu.tn" class="auth_mail" title="E-mail the corresponding author
;
B. El Jani
关键词:
GaAs/InxG
a1
;
&minus
;
;
xAs/GaAs structures
;
Strain effect
;
Valence-band splitting
;
Photoreflectance
;
MOVPE
刊名:Surface and Coatings Technology
出版年:2016
3.
Determination of surface electric potential by
photoreflectance
spectroscopy of HEMT heterostructures
作者:
L. Zamora-Peredo
;
I.E. Cortes-Mestizo
;
L. Garc¨ªa-Gonz¨¢lez
;
J. Hern¨¢ndez-Torres
;
D. V¨¢zquez-Cortes
;
S. Shimomura
;
A. Cisneros-de la Rosa
;
V.H. M¨¦ndez-Garc¨ªa
关键词:
A1
. Characterization
;
A1
.
Photoreflectance
;
A3. Molecular beam epitaxy
;
B3. High electron mobility transistors
刊名:Journal of Crystal Growth
出版年:2013
4.
Nitrogen-induced localized level observed by
photoreflectance
in GaAsN thin films grown by chemical beam epitaxy
作者:
Hidetoshi Suzuki
;
Akio Suzuki
;
Atsuhiko Fukuyama
;
Tetsuo Ikari
关键词:
A1
.
Photoreflectance
;
A3. Chemical beam epitaxy
;
B1. Dilute nitride
刊名:Journal of Crystal Growth
出版年:1 December, 2013
5.
Growth condition dependence of Ge-doped ¦Â-FeSi
2
epitaxial film by molecular beam epitaxy
作者:
Keiichi Noda
;
Yoshikazu Terai
;
Yasufumi Fujiwara
关键词:
A1
. Crystal morphology
;
A1
. Doping
;
A3. Molecular beam epitaxy
;
B1. Germanium silicon alloys
;
B2. Semiconducting silicon compounds
;
B3. Infrared devices
刊名:Journal of Crystal Growth
出版年:2013
6.
Optical characterization of a GaAsSb/GaAs/GaAsP strain-compensated quantum well structure grown by metal-organic vapor phase epitaxy
作者:
C.T. Huang
a
;
1
;
J.D. Wu
a
;
C.F. Liu
a
;
Y.S. Huang
a
;
ysh@mail.ntust.edu.tw
;
C.T. Wan
b
;
Y.K. Su
b
;
K.K. Tiong
c
关键词:
A1
. Optical Characterization
;
A3. Metal-organic vapor phase epitaxy
;
B2. Semiconducting III&ndash
;
V materials
刊名:Journal of Crystal Growth
出版年:2013
7.
Photoreflectance
study of GaMnAs layers grown by MBE
作者:
I. Martí
;
nez-Velis
a
;
imartinez@fis.cinvestav.mx"" rel=""nofollow
;
R. Contreras-Guerrero
a
;
J.S. Rojas-Ramí
;
rez
a
;
M. Ramí
;
rez-Ló
;
pez
a
;
S. Gallardo-Herná
;
ndez
b
;
Y. Kudriatsev
b
;
C. Vá
;
zquez-Ló
;
pez
a
;
S. Jimé
;
nez-Sandoval
c
;
V.-T. Rangel-Kuoppa
d
;
M. Ló
;
pez-Ló
;
pez
a
关键词:
A3. Molecular beam epitaxy
;
A1
. Atomic force microscopy
;
A1
. Characterization
;
B2. Magneto-optic materials
;
B2. Semiconducting gallium arsenide
刊名:Journal of Crystal Growth
出版年:2011
8.
Growth of GaAsBi alloy under alternated bismuth flows by metalorganic vapor phase epitaxy
作者:
Z. Chine
a
;
H. Fitouri
;
a
;
hedi.fitouri@fsm.rnu.tn"" rel=""nofollow
;
I. Zaied
a
;
A. Rebey
a
;
B. El Jani
a
关键词:
B1. GaAs
1−
;
x
Bi
x
;
A1
. HRXRD
;
A3. AP-MOVPE
刊名:Journal of Crystal Growth
出版年:2011
9.
Photoreflectance
study of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy
作者:
T. Mozume
;
J. Kasai
;
M. Nagase
;
T. Simoyama
;
H. Ishikawa
关键词:
A1
.
Photoreflectance
;
A3. Quantum wells
;
B1. InGaAs/AlAsSb
刊名:Journal of Crystal Growth
出版年:2007
10.
Study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs substrates subjected to different treatments
作者:
R. Contreras-Guerrero
;
A. Guillen-Cervantes
;
Z. Rivera-Alvarez
;
A. Pulzara-Mora
;
S. Gallardo-Hern
;
ez
;
Y. Kudriatsev
;
V.M. Sanchez-Resendiz
;
J.S. Rojas-Ramirez
;
E. Cruz-Hern
;
ez
;
V.H. Mé
;
ndez-Garc
关键词:
A1
. Carbon
;
A1
. GaAs surface treatment
;
A1
. Impurities
;
A1
. Oxygen
;
A3. Quantum wells
刊名:Journal of Crystal Growth
出版年:2009
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