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在“Elsevier电子期刊”中，命中：501条，耗时：0.0219906 秒

在所有数据库中总计命中：473条

1.An investigation of near-infrared photoluminescence from AP-MOVPE grown InSb/GaSb quantum dot structures

作者：C.C. Ahia^a ; ; N. Tile^a ; Z.N. Urgessa^a ; J.R. Botha^a ; J.H. Neethling^b

关键词：A1. Defects ; A1. Nucleation ; A1. Substrates ; A3. Metalorganic vapor phase epitaxy ; A3. Quantum wells

刊名：Journal of Crystal Growth

出版年：2017

2.Synthesis, structure, lattice energy and enthalpy of 2D hybrid perovskite [NH₃(CH₂)₄NH₃]CoCl_4, compared to [NH₃(CH₂)_nNH₃]CoCl₄, n=3-9

作者：Seham K. Abdel-Aal ; ^{seham@sci.cu.edu.eg} ; Ahmed S. Abdel-Rahman

关键词：A1. Crystal structure ; A2. Growth from high temperature solutions ; A2. Single crystal growth ; A3. Quantum wells ; B1. Perovskites ; B1. Inorganic compound

刊名：Journal of Crystal Growth

出版年：2017

3.Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band

作者：J. Mickevičius ; ^{juras.mickevicius@ff.vu.lt} ; D. Dobrovolskas ; R. Aleksiejūnas ; K. Nomeika ; T. Grinys ; A. Kadys ; G. Tamulaitis

关键词：A1. Carrier localization ; A3. MOCVD ; A3. Quantum wells ; A3. SPSL ; B1. Nitrides

刊名：Journal of Crystal Growth

出版年：2017

4.Growth and characterization of charge carrier spatially confined SrMnO₃/La_0.7Sr_0.3MnO₃/SrMnO₃ trilayers

作者：A. Galdi^c ; ^{agaldi@unisa.it} ; C. Sacco^a ; ^b ; P. Orgiani^b ; F. Romeo^d ; L. Maritato^a ; ^b

关键词：A1. Interfaces ; A3. Molecular beam epitaxy ; A3. Quantum wells. ; B1. Manganites ; B1. Oxides ; B1. Perovskites

刊名：Journal of Crystal Growth

出版年：2017

5.Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells

作者：Kaddour Lekhal^a ; Sakhawat Hussain^a ; ^b ; Philippe De Mierry^a ; Philippe Venné ; guè ; s^a ; Maud Nemoz^a ; Jean-Michel Chauveau^a ; ^b ; Benjamin Damilano^a ; ^{bd@crhea.cnrs.fr" class="auth_mail" title="E-mail the corresponding author}

关键词：A1. Stresses ; A3. Metalorganic vapor phase epitaxy ; A3. Quantum wells ; B1. Nitrides ; B2. Semiconducting III&ndash ; V materials

刊名：Journal of Crystal Growth

出版年：2016

6.Tuning emission in violet, blue, green and red in cubic GaN/InGaN/GaN quantum wells

作者：I.E. Orozco Hinostroza^a ; ^{ignacio.orozco@ipicyt.edu.mx" class="auth_mail" title="E-mail the corresponding author} ; M. Avalos-Borja^a ; ^b ; V.D. Compeá ; n Garcí ; a^c ; C. Cuellar Zamora^c ; A.G. Rodrí ; guez^c ; E. Ló ; pez Luna^c ; M.A. Vidal^c ; ^{mavidalborbolla@yahoo.com.mx" class="auth_mail" title="E-mail the corresponding author}

关键词：A3. Quantum wells ; A3. Molecular beam epitaxy ; B2. Semiconducting III&ndash ; V materials ; B3. Heterojunction semiconductor devices

刊名：Journal of Crystal Growth

出版年：2016

7.Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility >35×10⁶ cm²/V s in AlGaAs/GaAs quantum wells grown by MBE

作者：Geoffrey C. Gardner^a ; ^b ; Saeed Fallahi^a ; John D. Watson^a ; Michael J. Manfra^a ; ^b ; ^c ; ^{mmanfra@purdue.edu" class="auth_mail" title="E-mail the corresponding author}

关键词：A1. Electron mobility ; A3. Molecular beam epitaxy (MBE) ; A3. Quantum wells ; Gallium arsenide ; Two dimensional electron gas (2DEG)

刊名：Journal of Crystal Growth

出版年：2016

8.GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source

作者：Yvon Cordier^a ; ^{yc@crhea.cnrs.fr" class="auth_mail" title="E-mail the corresponding author} ; Benjamin Damilano^a ; Phannara Aing^b ; Catherine Chaix^b ; Florence Linez^c ; Filip Tuomisto^c ; Philippe Venné ; guè ; s^a ; Eric Frayssinet^a ; Denis Lefebvre^a ; Marc Portail^a ; Maud Nemoz^a

关键词：A1. Crystal morphology ; A1. Impurities ; A1. Point defects ; A3. Molecular beam epitaxy ; A3. Quantum wells ; B1. Nitrides

刊名：Journal of Crystal Growth

出版年：2016

9.Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells

作者：George Zerveas^a ; ^{gzerveas@iis.ee.ethz.ch" class="auth_mail" title="E-mail the corresponding author} ; Enrico Caruso^b ; Giorgio Baccarani^c ; Lukas Czornomaz^d ; Nicolas Daix^d ; David Esseni^b ; Elena Gnani^c ; Antonio Gnudi^c ; Roberto Grassi^c ; Mathieu Luisier^a ; Troels Markussen^e ; Patrik Osgnach^b ; Pierpaolo Palestri^b ; Andreas Schenk^a ; Luca Selmi^b ; Marilyne Sousa^d ; Kurt Stokbro^e ; Michele Visciarelli^c

关键词：III-V semiconductors ; Band-structure ; DFT ; Tight-binding ; k ; · ; p ; Non-parabolic effective mass models ; Ultra-Thin Body MOSFET

刊名：Solid State Electronics

出版年：2016

10.Controlling the compositional inhomogeneities in Al_xGa_1−xN/Al_yGa_1−yN MQWs grown by PA-MBE: Effect on luminescence properties

作者：Pallabi Pramanik^a ; Sayantani Sen^a ; Chirantan Singha^a ; Abhra Shankar Roy^a ; Alakananda Das^b ; Susanta Sen^b ; Anirban Bhattacharyya^b ; ; Deepak Kumar^c ; D.V. Sridhara Rao^c

关键词：A1. Characterization ; A3. Molecular beam epitaxy ; A3. Quantum wells ; B1. Nitrides ; B2. Semiconducting III&ndash ; V materials

刊名：Journal of Crystal Growth

出版年：2016

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