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CNKI学位论文(187)
知网期刊论文(41)
在“
Elsevier电子期刊
”中,
命中:
34
条,耗时:小于0.01 秒
在所有数据库中总计命中:
228
条
1.
Effect of asymmetrical double-pockets and gate-drain underlap on Schottky barrier tunneling FET:
Ambipolar
conduction
vs. high frequency performance
作者:
Ahmed Shaker
a
;
Mahmoud Ossaimee
a
;
m_ossaimee@yahoo.com" class="auth_mail" title="E-mail the corresponding author
;
A. Zekry
b
关键词:
SB-TFET
;
Gate-drain underlapping
;
Double pockets
;
Ambipolar
conduction
;
Unit-gain cutoff frequency (fT)
刊名:Superlattices and Microstructures
出版年:2016
2.
A novel gate and drain engineered charge plasma tunnel field-effect transistor for low sub-threshold swing and
ambipolar
nature
作者:
Dharmendra Singh Yadav
tech.dharmendra26@gmail.com
;
Bhagwan Ram Raad
;
bhagwanramraad@gmail.com
;
Dheeraj Sharma
dheeraj24482@gmail.com
关键词:
Ambipolar
conduction
;
Charge plasma
;
Sub-threshold swing
;
Gate to drain capacitance
;
Work function engineering
刊名:Superlattices and Microstructures
出版年:2016
3.
Investigation of dielectric pocket induced variations in tunnel field effect transistor
作者:
Upasana
a
;
upasanakardam@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Rakhi Narang
b
;
rakhinarang@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Manoj Saxena
c
;
saxena_manoj77@yahoo.co.in" class="auth_mail" title="E-mail the corresponding author
;
Mridula Gupta
a
;
mridula@south.du.ac.in" class="auth_mail" title="E-mail the corresponding author
关键词:
Ambipolar
conduction
;
Dielectric pocket
;
High-k dielectric pocket
;
Low-k dielectric pocket
;
Tunnel FET
刊名:Superlattices and Microstructures
出版年:2016
4.
Spacer engineered Trigate SOI TFET: An investigation towards harsh temperature environment applications
作者:
Mallikarjunarao
a
;
mallikarjunarao524@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Rajeev Ranjan
a
;
rajeevranjan212@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
K.P. Pradhan
a
;
kp2.etc@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
L. Artola
b
;
laurent.artola@onera.fr" class="auth_mail" title="E-mail the corresponding author
;
P.K. Sahu
a
;
pksahu@nitrkl.ac.in" class="auth_mail" title="E-mail the corresponding author
关键词:
Trigate TFET
;
Band-to-band tunneling (BTBT)
;
Subthreshold swing (SS)
;
High-k spacer
;
Ambipolar
conduction
;
Reliability
刊名:Superlattices and Microstructures
出版年:2016
5.
Dielectric modulated overlapping gate-on-drain tunnel-FET as a label-free biosensor
作者:
Dawit Burusie Abdi
;
dave.abdi@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
M. Jagadesh Kumar
mamidala@ee.iitd.ac.in" class="auth_mail" title="E-mail the corresponding author
关键词:
Tunnel FET
;
Biosensors
;
Dielectric modulation
;
Nanogap
;
Overlapping gate-on-drain
;
Controlling
ambipolar
current
;
Ambipolar
ity
;
Label-free
刊名:Superlattices and Microstructures
出版年:2015
6.
A stabilized Runge-Kutta-Legendre method for explicit super-time-stepping of parabolic and mixed equations
作者:
Chad D. Meyer
;
Dinshaw S. Balsara
;
Tariq D. Aslam
关键词:
Numerical methods
;
Super-time-stepping
;
Parabolic operators
;
PDEs
刊名:Journal of Computational Physics
出版年:15 January, 2014
7.
Effect of samarium content on onset of minor p-type conductivity in ceria-based electrolytes
作者:
D. Pé
;
rez-Coll
a
;
dpcoll@icv.csic.es
;
dpcoll@ull.es
;
P. Nú
;
ñ
;
ez
b
;
J.R. Frade
c
关键词:
Ceria-based electrolytes
;
Mixed
conduction
;
Oxidizing conditions
;
Electrochemical permeability
;
p-type electronic conductivity
刊名:Journal of Power Sources
出版年:2013
8.
Effects of film morphology on
ambipolar
transport in top-gate-type organic field-effect transistors using poly(9,9-dioctylfluorene-co-bithiophene)
作者:
Kyohei Koiwai
;
Hirotake Kajii
;
;
;
kajii@oled.eei.eng.osaka-u.ac.jp
;
Yutaka Ohmori
关键词:
Ambipolar
organic field-effect transistor
;
Polyfluorene
;
Film morphology
;
Top-gate
;
Light-emitting device
刊名:Synthetic Metals
出版年:2011
9.
Contact vs bulk effects in N-semi-insulating-N and P-semi-insulating-P diodes
作者:
J.C. Manifacier
;
jean-claude.manifacier@univ-montp2.fr
关键词:
Semi-insulating
;
GaAs
;
InP
;
I&ndash
;
V curve
;
P-SI-P and N-SI-N diodes
刊名:Solid-State Electronics
出版年:2013
10.
The influences of substrate temperature on
ambipolar
organic heterojunction transistors
作者:
Wen Gu
;
Xifeng Li
;
Hao Zhang
;
Bin Wei
;
Jianhua Zhang
;
Jun Wang
关键词:
Organic heterojunction transistors
;
Substrate temperature
;
Ambipolar
transport
刊名:Thin Solid Films
出版年:2010
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