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在“Elsevier电子期刊”中，命中：2,060条，耗时：0.0579713 秒

在所有数据库中总计命中：599条

1.Effect of shock on transition metal carbides and nitrides {MC/N (M = Zr, Nb, Ta, Ti)}

作者：Chandrani Bhattacharya

关键词：Transition metal carbides/nitrides ; EOS ; Shock ; Hugoniot ; Melting ; DFT

刊名：Computational Materials Science

出版年：2017

2.Novel synthesis, characterization and magnetic properties of nano-structured γ-Mo₂N and γ-Co_0.25Mo_1.75N nitrides

作者：Pragnya P. Mishra ; Rabi N. Panda ; ^{rnp@goa.bits-pilani.ac.in} ; ^{uniprofessional@gmail.com}

关键词：A. Nitride ; B. Chemical synthesis ; B. Magnetic properties ; C. X-ray diffraction ; C. Transmission electron microscopy (TEM)

刊名：Materials Research Bulletin

出版年：2017

3.Near zero thermal expansion in Ge-doped Mn₃GaN compounds

作者：Yongjuan Dai^a ; Rongjin Huang^b ; Wei Wang^b ; Laifeng Li^b ; Zhonghua Sun^c ;

关键词：X-ray diffraction ; Thermal expansion ; Nitrides ; Magnetic properties

刊名：Ceramics International

出版年：2017

4.Fe-doped semi-insulating GaN with solid Fe source grown on (110) Si substrates by NH₃ molecular beam epitaxy

作者：Young Kyun Noh^a ; ^c ; ^{young.k.noh@gmail.com} ; Sang Tae Lee^b ; Moon Deock Kim^b ; Jae Eung Oh^a

关键词：A1.Characterization ; A1.Doping ; A3.Molecular beam epitaxy ; B1.Nitrides ; B2.Semiconducting III-V materials ; B3. Heterojunction semiconductor devices

刊名：Journal of Crystal Growth

出版年：2017

5.Indium incorporation in semipolar and nonpolar InGaN grown by plasma assisted molecular beam epitaxy

作者：M. Sawicka^a ; ^b ; ^{sawicka@unipress.waw.pl} ; A. Feduniewicz-Żmuda^a ; M. Kryśko^a ; H. Turski^a ; G. Muziol^a ; M. Siekacz^a ; P. Wolny^c ; C. Skierbiszewski^a ; ^b

关键词：A3. Molecular beam epitaxy ; B1. Nitrides ; A1. Atomic force microscopy ; A1. Characterization

刊名：Journal of Crystal Growth

出版年：2017

6.Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band

作者：J. Mickevičius ; ^{juras.mickevicius@ff.vu.lt} ; D. Dobrovolskas ; R. Aleksiejūnas ; K. Nomeika ; T. Grinys ; A. Kadys ; G. Tamulaitis

关键词：A1. Carrier localization ; A3. MOCVD ; A3. Quantum wells ; A3. SPSL ; B1. Nitrides

刊名：Journal of Crystal Growth

出版年：2017

7.Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing

作者：Maud Nemoz^a ; ^{mn@crhea.cnrs.fr} ; Roy Dagher^a ; Samuel Matta^a ; ^b ; Adrien Michon^a ; Philippe Venné ; guè ; s^a ; Julien Brault^a

关键词：B1. Nitrides ; B2. Semiconducting III-V materials ; A3. Molecular beam epitaxy ; A1. X-ray diffraction ; A1. Atomic force microscopy

刊名：Journal of Crystal Growth

出版年：2017

8.Thick nonpolar m-plane and semipolar GaN on an ammonothermal seed by tri-halide vapor-phase epitaxy using GaCl₃

作者：Kenji Iso ; ^{isokenji@cc.tuat.ac.jp} ; Karen Matsuda ; Nao Takekawa ; Kazuhiro Hikida ; Naoto Hayashida ; Hisashi Murakami ; Akinori Koukitu

关键词：A1. Substrates ; A3. Hydride vapor-phase epitaxy ; B1. Nitrides ; B2. Semiconducting III-V materials

刊名：Journal of Crystal Growth

出版年：2017

9.Miscut dependent surface evolution in the process of N-polar growth under N-rich condition

作者：Filip Krzyżewski^a ; ^{fkrzy@ifpan.edu.pl} ; Magdalena A. Załuska-Kotur^a ; ^b ; ^{zalum@ifpan.edu.pl} ; Henryk Turski^c ; Marta Sawicka^c ; Czesław Skierbiszewski^c

关键词：A1. Diffusion ; A1. Growth models ; A1. Surface structure ; A3. Molecular beam epitaxy ; B1. Nitrides ; B2. Semiconducting III&ndash ; V materials

刊名：Journal of Crystal Growth

出版年：2017

10.Theoretical assessment of the electro-optical features of the group III nitrides (B₁₂N₁₂, Al₁₂N₁₂ and Ga₁₂N₁₂) and group IV carbides (C₂₄, Si₁₂C₁₂ and Ge₁₂C₁₂) nanoclusters encapsulated with alkali metals (Li, Na and K)

作者：Elham Tahmasebi^a ; Ehsan Shakerzadeh^b ; ^{e.shakerzadeh@scu.ac.ir" class="auth_mail" title="E-mail the corresponding author} ; Zeinab Biglari^a

关键词：Cluster ; Alkali metals ; DFT calculation ; TD-DFT ; Hyperpolarizability

刊名：Applied Surface Science

出版年：2016

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