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CNKI期刊论文0611(3)
知网期刊论文(1118)
在“
Elsevier电子期刊
”中,
命中:
1,345
条,耗时:0.0259874 秒
在所有数据库中总计命中:
5,070
条
1.
Tuning the
tunneling
probability by mechanical stress in Schottky barrier based reconfigurable nanowire transis
to
rs
作者:
Tim Baldauf
a
;
Tim.Baldauf@namlab.com
;
André
;
Heinzig
a
;
Jens Trommer
b
;
Thomas Mikolajick
a
;
b
;
Walter Michael Weber
a
;
b
关键词:
Silicon nanowire
;
Reconfigurable logic
;
CMOS
;
RFET
;
SBFET
;
Tunneling
;
Schottky junction
;
Stress
;
Strain
;
Symmetry
;
Deformation potential
;
Self-limited oxidation
;
Simulation
;
TCAD
刊名:Solid-State Electronics
出版年:2017
2.
The strain effect on the Dirac electrons
tunneling
through the time-periodic scalar and vec
to
r barriers
作者:
Weixian Yan
wxyansxu@gmail.com" class="auth_mail" title="E-mail the corresponding author
关键词:
Graphene
;
Magnetic barriers
;
Strain
;
Side-
band
Transmission
刊名:Physica B: Physics of Condensed Matter
出版年:2017
3.
Optimum
to
p and bot
to
m oxide thicknesses and flat-
band
voltages for improving subthreshold characteristics of 5 nm DGMOSFET
作者:
Hakkee Jung
a
;
hkjung@kunsan.ac.kr
;
Sima Dimitrijev
b
关键词:
Subthreshold
;
Threshold voltage
;
DGMOSFET
;
Tunneling
current
;
ΔVon&ndash
;
off
刊名:Superlattices and Microstructures
出版年:2017
4.
Gate Drain Underlapped-PNIN-GAA-TFET for Comprehensively Upgraded Analog/RF Performance
作者:
Jaya Madan
jayamadan.2012@gmail.com
;
Rishu Chaujar
;
rishu.phy@dce.edu
关键词:
Band
to
band
tunneling
(BTBT)
;
Source pocket
;
Gate-drain underlapping (GDU)
;
Parasitic capacitance
;
Tunneling
FET (TFET)
刊名:Superlattices and Microstructures
出版年:2017
5.
A solution approach
to
p-type Cu
2
FeSnS
4
thin-films and pn-junction solar cells: Role of electron selective materials on their performance
作者:
Soumyo Chatterjee
;
Amlan J. Pal
;
sspajp@iacs.res.in
关键词:
Cu2FeSnS4 (CFTS) thin-films
;
pn-junctions formed through SILAR method
;
Solar cell characteristics
;
Band
-diagram from scanning
tunneling
spectroscopy
;
Junction properties and device resistances
刊名:Solar Energy Materials and Solar Cells
出版年:2017
6.
Realization of Silicon nanotube
tunneling
FET on junctionless structure using single and multiple gate workfunction
作者:
R. Ambika
a
;
omambika3@gmail.com
;
N. Keerthana
b
;
keerthanaec12@gmail.com
;
R. Srinivasan
a
;
srinivasanr@ssn.edu.in
关键词:
Tunnel FET
;
Junctionless Silicon nanotube
;
Single gate workfunction
刊名:Solid-State Electronics
出版年:2017
7.
Influence of Germanium source on dopingless tunnel-FET for improved analog/RF performance
作者:
Kanchan Cecil
;
c.kanchan@iiitdmj.ac.in
;
Jawar Singh
jawar@iiitdmj.ac.in
关键词:
Tunnel field effect transis
to
r (TFETs)
;
Band
-
to
-
band
tunneling
(BTBT)
;
Charge plasma
;
Band
gap engineering
;
Germanium (Ge)
;
Analog FOMs
;
RF FOMs
;
TCAD
刊名:Superlattices and Microstructures
出版年:2017
8.
Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transis
to
rs
作者:
Nguyen Dang Chien
a
;
chiennd@dlu.edu.vn
;
Chun-Hsing Shih
b
关键词:
Source doping effects
;
EOT scaling
;
Band
-
to
-
band
tunneling
;
Tunnel field-effect transis
to
r
;
Low-
band
gap TFET
刊名:Superlattices and Microstructures
出版年:2017
9.
Performance comparison of single and dual metal dielectrically modulated TFETs for the application of label free biosensor
作者:
Madhulika Verma
madhulikaverma@iiitdmj.ac.in
;
Dheeraj Sharma
dheeraj@iiitdmj.ac.in
;
Sunil Pandey
;
sunilpandey@iiitdmj.ac.in
;
Kaushal Nigam
kaushal.nigam@iiitdmj.ac.in
;
P.N. Kondekar
pnkondekar@iiitdmj.ac.in
关键词:
Band
to
band
tunneling
(BTBT)
;
Dielectrically modulated TFETs
;
Biosensors
;
Technology computer aided design (TCAD)
;
Sensitivity
刊名:Superlattices and Microstructures
出版年:2017
10.
Double gate impact ionization MOS transis
to
r: Proposal and investigation
作者:
Zhaonian Yang
;
yzn@xaut.edu.cn
;
Yue Zhang
;
Yuan Yang
;
Ningmei Yu
关键词:
Band
-
to
-
band
tunneling
(BTBT)
;
Double gate
;
Impact ionization
;
IMOS
;
Leakage current
刊名:Superlattices and Microstructures
出版年:2017
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3
4
5
6
7
8
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