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Springer电子图书(1)
CNKI学位论文(183)
知网期刊论文(76)
在“
Elsevier电子期刊
”中,
命中:
983
条,耗时:小于0.01 秒
在所有数据库中总计命中:
260
条
1.
Evidence of minority carrier traps contribution in deep level transient spectroscopy measurement in n-GaN Schottky diode
作者:
S. Amor
a
;
b
;
A. Ahaitouf
a
;
Az Ahaitouf
c
;
J.P. Salvestrini
b
;
d
;
jean-paul.salvestrini@univ-lorraine.fr
;
A. Ougazzaden
d
关键词:
DLTS
;
Carrier traps
;
GaN
;
Schottky diode
刊名:Superlattices and Microstructures
出版年:2017
2.
Investigation of defects in indium doped TiO
2
thin films using electrical and optical techniques
作者:
Noor Alhuda Al Saqri
a
;
b
;
ppxnaal@nottingham.ac.uk
;
Aniruddha Mondal
c
;
Jorlandio Francisco Felix
d
;
Yara Galvã
;
o Gobato
e
;
Vanessa Orsi Gordo
e
;
Hind Albalawi
a
;
Dler Jameel
a
;
f
;
Haifa Alghamdi
a
;
Faisal Al Mashary
a
;
David Taylor
a
;
Mahmmoud S. Abd El-sadek
g
;
Mohamed Henini
a
关键词:
TiO2
;
In doping
;
I&ndash
V ;
DLTS
;
PL
刊名:Journal of Alloys and Compounds
出版年:2017
3.
Investigation of a combined platinum and electron lifetime control treatment for silicon
作者:
Yunpeng Jia
a
;
Zhihang Cui
a
;
czhczh321321@126.com
;
Fei Yang
b
;
Bao Zhao
a
;
Shikai Zou
a
;
Yongsheng Liang
a
关键词:
Platinum
;
Electron irradiation
;
Combined Lifetime Treatment
;
Lifetime
刊名:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
出版年:2017
4.
Current transport and deep levels in p-Si/n-Zn
0.9
Mg
0.1
O/n-ZnO heterojunction
作者:
K.M. Paradowska
a
;
karolina.paradowska@pwr.edu.pl" class="auth_mail" title="E-mail the corresponding author
;
E. Płaczek-Popko
a
;
M.A. Pietrzyk
b
;
K. Gwó
;
źdź
a
;
A. Kozanecki
b
关键词:
Zinc oxide
;
Deep level transient spectroscopy
;
Current transport
;
Deep levels
刊名:Journal of Alloys and Compounds
出版年:2017
5.
Electrical Characterisation of electron beam exposure induced Defects in silicon
作者:
Helga T. Danga
;
helga.danga@up.ac.za" class="auth_mail" title="E-mail the corresponding author
;
Francois D. Auret
;
Sergio M.M. Coelho
;
Mmantsae Diale
关键词:
Silicon
;
Electron beam exposure
;
DLTS
;
Laplace-
DLTS
刊名:Physica B: Physics of Condensed Matter
出版年:2016
6.
Electrical characterization of deep levels created by bombarding nitrogen-doped 4H-SiC with alpha-particle irradiation
作者:
Ezekiel Omotoso
a
;
b
;
ezekiel.omotoso@up.ac.za" class="auth_mail" title="E-mail the corresponding author
;
Walter E. Meyer
a
;
wmeyer@up.ac.za" class="auth_mail" title="E-mail the corresponding author
;
F. Danie Auret
a
;
Alexander T. Paradzah
a
;
Matshisa J. Legodi
a
关键词:
DLTS
;
4H-SiC
;
Alpha-particle irradiation
;
Annealing
;
Schottky barrier diode
刊名:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
出版年:2016
7.
Vacancy-related defects in n-type Si implanted with a rarefied microbeam of accelerated heavy ions in the MeV range
作者:
I. Capan
a
;
Ž. Pastuović
b
;
zkp@ansto.gov.au" class="auth_mail" title="E-mail the corresponding author
;
R. Siegele
b
;
R. Jaćimović
c
关键词:
Ion implantation
;
Silicon
;
Defects
;
Vacancy
;
DLTS
刊名:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
出版年:2016
8.
Effect of gamma-ray irradiation on the device process-induced defects in 4H-SiC epilayers
作者:
T. Miyazaki
a
;
T. Makino
b
;
A. Takeyama
b
;
S. Onoda
b
;
T. Ohshima
b
;
Y. Tanaka
c
;
M. Kandori
c
;
T. Yoshie
c
;
Y. Hijikata
a
;
yasuto@opt.ees.saitama-u.ac.jp
关键词:
4H-SiC
;
Gamma-ray irradiation
;
Photoluminescence (PL) imaging
;
Basal plane dislocation (BPD)
;
Stacking fault
;
Deep level transient spectroscopy (
DLTS
)
刊名:Superlattices and Microstructures
出版年:2016
9.
Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC
作者:
E. Omotoso
a
;
b
;
ezekiel.omotoso@up.ac.za" class="auth_mail" title="E-mail the corresponding author
;
wmeyer@up.ac.za" class="auth_mail" title="E-mail the corresponding author
;
W.E. Meyer
a
;
S.M.M. Coelho
a
;
M. Diale
a
;
P.N.M. Ngoepe
a
;
F.D. Auret
a
关键词:
4H-SiC
;
Defects
;
DLTS
;
Annealing
;
Electron beam deposition
刊名:Materials Science in Semiconductor Processing
出版年:2016
10.
Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences
作者:
E. Omotoso
a
;
b
;
ezekiel.omotoso@up.ac.za" class="auth_mail" title="E-mail the corresponding author
;
W.E. Meyer
a
;
F.D. Auret
a
;
M. Diale
a
;
P.N.M. Ngoepe
a
关键词:
DLTS
;
Free carrier removal rate
;
Carrier concentration
;
4H-SiC
;
Alpha-particle irradiation
刊名:Physica B: Physics of Condensed Matter
出版年:2016
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