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内部出版物
CNKI学位论文(33)
知网期刊论文(42)
在“
Elsevier电子期刊
”中,
命中:
23
条,耗时:小于0.01 秒
在所有数据库中总计命中:
75
条
1.
Process modules for GeSn nanoelectronics with
high
Sn-contents
作者:
C. Schulte-Braucks
a
;
c.schulte-Braucks@fz-juelich.de
;
S. Glass
a
;
E. Hofmann
a
;
D. Stange
a
;
N. von den Driesch
a
;
J.M. Hartmann
b
;
c
;
Z. Ikonic
d
;
Q.T. Zhao
a
;
D. Buca
a
;
S. Mantl
a
关键词:
GeSn
;
MOSFET
;
High
-k/metal
gate
;
NiGeSn
刊名:Solid-State Electronics
出版年:2017
2.
Analytical modeling and numerical simulation of novel double-
gate
InGaAs vertical nanowire transistor device for threshold voltage tuning and improved performance
作者:
Subha Subramaniam
a
;
b
;
subha.sakec@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Sangeeta M. Joshi
c
;
R.N. Awale
a
关键词:
Vertical nanowire
;
DG-VNWT
;
High
-k
gate
stack
;
Leakage current
;
Analytical model
刊名:Engineering Science and Technology,an International Journal
出版年:2016
3.
Low-power DRAM-compatible Replacement
Gate
High
-k/Metal Gate
Stack
s
作者:
R. Ritzenthaler
a
;
romain.ritzenthaler@imec.be
;
T. Schram
a
;
E. Bury
a
;
c
;
A. Spessot
b
;
C. Caillat
b
;
V. Srividya
b
;
F. Sebaai
a
;
J. Mitard
a
;
L.-Å
;
. Ragnarsson
a
;
G. Groeseneken
a
;
c
;
N. Horiguchi
a
;
P. Fazan
b
;
A. Thean
a
关键词:
DRAM periphery transistors
;
RMG (Replacement Metal
Gate
)
;
Work Function Engineering
刊名:Solid-State Electronics
出版年:2013
4.
Backside medium energy ion scattering study of the lanthanum diffusion in advanced
gate
stack
s for the 32 nm node
作者:
F. Pierre
;
D. Jalabert
;
R. Boujamaa
;
M. Py
;
J.P. Barnes
;
F. Bertin
关键词:
High
-k/metal
gate
stack
;
Threshold voltage tuning
;
LaOx capping layer
;
Lanthanum diffusion
;
Backside preparation and analysis
;
MEIS
刊名:Microelectronic Engineering
出版年:2013
5.
Electrical characterization of thulium silicate interfacial layers for integration in
high
-k/metal
gate
CMOS technology
作者:
Eugenio Dentoni Litta
;
eudl@kth.se" class="auth_mail
;
Per-Erik Hellströ
m ;
Christoph Henkel
1
;
Mikael Ö
;
stling
关键词:
TmSiO
;
LaSiO
;
Silicate
;
Interfacial layer
;
High
-k
刊名:Solid-State Electronics
出版年:August 2014
6.
The fabrication and the reliability of poly-Si MOSFETs using ultra-thin
high
-K/metal-
gate
stack
作者:
M.H. Lee
;
mhlee@ntnu.edu.tw
;
K.-J. Chen
关键词:
3D-ICs
;
Poly-Si
;
High
-K
;
Reliability
刊名:Solid-State Electronics
出版年:2013
7.
Charge trapping induced frequency-dependence degradation in n-MOSFETs with
high
-k/metal
gate
stack
s
作者:
Chih-Hao
;
Dai
a
;
Ting-Chang
;
Chang
a
;
;
b
;
;
c
;
;
tcchang@mail.phys.nsysu.edu.tw
;
Ann-Kuo
;
Chu
a
;
Yuan-Jui
;
Kuo
a
;
Ya-Chi
;
Hung
d
;
Wen-Hung
;
Lo
b
;
Szu-Han
;
Ho
e
;
Ching-En
;
Chen
e
;
Jou-Miao
;
Shih
b
;
Wan-Lin
;
Chung
b
;
Hua-Mao
;
Chen
b
;
Bai-Shan
;
Dai
b
;
Tsung-Ming
;
Tsai
d
;
Guangrui
;
Xia
f
;
Osbert
;
Cheng
g
;
Cheng Tung
;
Huang
g
关键词:
High
-k
gate
dielectric
;
TiN metal
gate
;
Electron trapping
;
Threshold voltage instability
刊名:Thin Solid Films
出版年:2011
8.
Effect of negative bias temperature instability induced by a low stress voltage on nanoscale
high
-k/metal
gate
pMOSFETs
作者:
Seonhaeng Lee
;
Cheolgyu Kim
;
Hyeokjin Kim
;
Gang-Jun Kim
;
Ji-Hoon Seo
;
Donghee Son
;
Bongkoo Kang
刊名:Microelectronics Reliability
出版年:2013
9.
Enhanced degradation of n-MOSFETs with
high
-k/metal
gate
stack
s under channel hot-carrier/
gate
-induced drain leakage alternating stress
作者:
Dongwoo Kim
;
Seonhaeng Lee
;
Cheolgyu Kim
;
Chiho Lee
;
Jeongsoo Park
;
Bongkoo Kang
刊名:Microelectronics Reliability
出版年:2012
10.
Substrate dependent mobility and strain effects for silicon and SiGe transistor channels with HKMG first
stack
s
作者:
S. Flachowsky
;
T. Herrmann
;
J. H?ntschel
;
R. Illgen
;
S.Y. Ong
;
M. Wiatr
关键词:
CMOS
;
Mobility enhancement
;
SiGe channel
;
Strained silicon
;
Stress
;
Substrate orientation
刊名:Solid-State Electronics
出版年:2013
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