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在“Elsevier电子期刊”中，命中：149条，耗时：0.0110231 秒

在所有数据库中总计命中：1,102条

1.The activation energy for Mg acceptor in the Ga-rich InGaN alloys

作者：Chuan-Zhen Zhao^a ; ^{as3262001@aliyun.com} ; Tong Wei^b ; Li-Ying Chen^a ; Sha-Sha Wang^a ; Jun Wang^a

关键词：InGaN alloy ; Activation energy ; Mg-doped ; Hydrogen atom like model

刊名：Superlattices and Microstructures

出版年：2017

2.Numerical simulation of InGaN Schottky solar cell

作者：Sidi Ould Saad Hamady^a ; ^b ; ^{sidi.hamady@univ-lorraine.fr" class="auth_mail" title="E-mail the corresponding author} ; Abdoulwahab Adaine^a ; ^b ; ^{abdoulwahab.adaine@univ-lorraine.fr" class="auth_mail" title="E-mail the corresponding author} ; Nicolas Fressengeas^a ; ^b ; ^{nicolas@fressengeas.net" class="auth_mail" title="E-mail the corresponding author}

关键词：Simulation ; Solar cell ; InGaN ; Schottky

刊名：Materials Science in Semiconductor Processing

出版年：2016

3.Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs

作者：J. Yang^a ; D.G. Zhao^a ; ^{dgzhao@red.semi.ac.cn" class="auth_mail" title="E-mail the corresponding author} ; D.S. Jiang^a ; P. Chen^a ; J.J. Zhu^a ; Z.S. Liu^a ; J.P. Liu^b ; L.Q. Zhang^b ; H. Yang^a ; ^b ; Y.T. Zhang^c ; G.T. Du^c

关键词：Quantum wells ; Localization states ; Growth temperature

刊名：Journal of Alloys and Compounds

出版年：2016

4.Carrier localization and phonon-assisted hopping effects in semipolar InGaN/GaN light-emitting dioses grown by selective area epitaxy

作者：Fanming Zeng^a ; Lihong Zhu^a ; ^{lhzhu@xmu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Wei Liu^a ; Xiaoying Li^a ; Weicui Liu^a ; Bo-Jhih Chen^b ; Yueh-Chien Lee^b ; Zhe Chuan Feng^c ; Baolin Liu^a ; ^{blliu@xmu.edu.cn" class="auth_mail" title="E-mail the corresponding author}

关键词：III-Nitrides ; Semipolar ; Carrier localization ; Electron-phonon interactions ; Selective area epitaxy

刊名：Journal of Alloys and Compounds

出版年：2016

5.Confocal electroluminescence investigations of highly efficient green InGaN LED via ZnO nanorods

作者：Hyun Jeong^a ; Mun Seok Jeong^a ; ^b ; ^{mjeong@skku.edu" class="auth_mail" title="E-mail the corresponding author}

关键词：Nitride materials ; Nanostructured materials ; Nanofabrications ; Scanning electron microscopy ; Optical spectroscopy ; Luminescence

刊名：Journal of Alloys and Compounds

出版年：2016

6.Epitaxial growth of high In-content In_0.41Ga_0.59N/GaN heterostructure on (11-20) Al₂O₃ substrate

作者：Shibin Krishna^a ; ^b ; Neha Aggarwal^a ; ^b ; Monu Mishra^a ; ^b ; K.K. Maurya^c ; Mandeep Kaur^d ; Geetanjali Sehgal^c ; Sukhveer Singh^c ; Nita Dilawar^e ; Bipin Kumar Gupta^f ; Govind Gupta^a ; ^b ; ^{govind@nplindia.org" class="auth_mail" title="E-mail the corresponding author}

关键词：InGaN ; a-plane sapphire ; MBE ; HRXRD

刊名：Journal of Alloys and Compounds

出版年：2016

7.Influence of TMIn flow rate on structural and optical quality of AlInGaN/GaN epilayers grown by MOCVD

作者：R. Loganathan ^{logu73511@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; K. Prabakaran ; S. Pradeep ; S. Surender ; Shubra Singh ; K. Baskar ; ^{drbaskar2009@gmail.com" class="auth_mail" title="E-mail the corresponding author}

关键词：Nitride materials ; Optical materials ; Vapor deposition ; AFM ; Luminescence

刊名：Journal of Alloys and Compounds

出版年：2016

8.Study on the Ultrafast Carrier Dynamics in the Bulk In_0.265GaN Thin Film

作者：Yi Zhang ; Xiaoming Wen ; Yu Feng ; Tran Smyth ; Shujuan Huang ; Santosh Shrestha ; Gavin Conibeer ; ^{z3283677@student.unsw.edu.au" class="auth_mail" title="E-mail the corresponding author}

关键词：third generation solar cells ; hot carrier solar cell ; InGaN alloy ; bulk thin film ; carrier dynamics ; ultrafast spectroscopy ; time-resolved photoluminescence ; transient absorption

刊名：Energy Procedia

出版年：2015

9.Growth of InGaN layers on (1 1 1) silicon substrates by reactive sputtering

作者：Qixin Guo ; Tomoya Nakao ; Takaya Ushijima ; Wangzhou Shi ; Feng Liu ; Katsuhiko Saito ; Tooru Tanaka ; Mitsuhiro Nishio

关键词：InGaN ; Reactive sputtering ; AFM ; Raman spectra

刊名：Journal of Alloys and Compounds

出版年：25 February, 2014

10.Influence of a low-temperature capping on the crystalline structure and morphology of InGaN quantum dot structures

作者：B. Krause ; B. Miljevic ; T. Aschenbrenner ; E. Piskorska-Hommel ; C. Tessarek ; M. Barchuk ; G. Buth ; R. Donfeu Tchana ; S. Figge ; J. Gutowski ; D. H盲nschke ; J. Kalden ; T. Laurus ; S. Lazarev ; R. Magalhaes-Paniago ; K. Sebald ; A. Wolska ; D. Hommel ; J. Falta ; V. Hol媒 ; et al.

关键词：InGaN ; Quantum dots ; X-ray diffraction ; EXAFS ; MOPVE

刊名：Journal of Alloys and Compounds

出版年：5 February, 2014

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