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CNKI期刊论文0611(2)
知网期刊论文(585)
在“
Elsevier电子期刊
”中,
命中:
2,006
条,耗时:0.0799618 秒
在所有数据库中总计命中:
2,938
条
1.
Numerical approximations for the
molecular
beam
epitaxial
growth model based on the invariant energy quadratization method
作者:
Xiaofeng Yang
a
;
1
;
xfyang@math.sc.edu
;
Jia Zhao
a
;
b
;
2
;
zhao62@math.sc.edu
;
Qi Wang
a
;
c
;
d
;
3
;
qwang@math.sc.edu
关键词:
Molecular
beam
epitaxial
;
Linear
;
Invariant energy quadratization
;
Unconditional
;
Energy stability
;
Second order
刊名:Journal of Computational Physics
出版年:2017
2.
Strain in
epitaxial
high-index Bi
2
Se
3
(221) films grown by
molecular
-
beam
epitaxy
作者:
Bin Li
a
;
Weiguang Chen
b
;
c
;
Xin Guo
a
;
Wingkin Ho
a
;
Xianqi Dai
b
;
c
;
Jinfeng Jia
d
;
Maohai Xie
a
;
mhxie@hku.hk
关键词:
High-index Bi2Se3
;
Strain
;
Topological insulator
;
Heterostructure
;
Molecular
-
beam
epitaxy
刊名:Applied Surface Science
出版年:2017
3.
Suspended Ga
2
Se
3
film and
epitaxial
Bi
2
Se
3
(221) on GaSb(001) by
molecular
-
beam
epitaxy
作者:
Bin Li
;
Yipu Xia
;
Wingkin Ho
;
Maohai Xie
;
mhxie@hku.hk
关键词:
B2. Bi2Se3
;
B2. Ga2Se3
;
A1. Suspended Ga2Se3 Film
;
B1. Topological insulator
;
A3.
Molecular
-
Beam
Epitaxy
刊名:Journal of Crystal Growth
出版年:2017
4.
On the correlation of growth, structural and electrical properties of
epitaxial
Ge grown on Si by solid source
molecular
beam
epitaxy
作者:
Sudipta Das
a
;
Krista R. Khiangte
b
;
Rajveer S. Fandan
a
;
Jaswant S. Rathore
b
;
Ravindra S. Pokharia
a
;
Suddhasatta Mahapatra
b
;
Apurba Laha
a
;
laha@ee.iitb.ac.in
关键词:
Epitaxial
Ge
;
MBE
;
CMOS
;
Photodetector
刊名:Current Applied Physics
出版年:2017
5.
Exceptionally large migration length of carbon and topographically-facilitated self-limiting
molecular
beam
epitaxial
growth of graphene on hexagonal boron nitride
作者:
Annette S. Plaut
a
;
A.S.Plaut@ex.ac.uk
;
Ulrich Wurstbauer
b
;
Sheng Wang
c
;
Antonio L. Levy
b
;
Lara Fernandes dos Santos
b
;
1
;
Lei Wang
d
;
Loren N. Pfeiffer
e
;
Kenji Watanabe
f
;
Takashi Taniguchi
f
;
Cory R. Dean
d
;
James Hone
d
;
Aron Pinczuk
b
;
c
;
Jorge M. Garcia
b
;
g
刊名:Carbon
出版年:2017
6.
Low temperature non radiative process's effects on the optical emission of GaN/Al
0.5
Ga
0.5
N nanostructures
作者:
Abdelkarim Kahouli
abdelkarim.kahouli@yahoo.fr
刊名:Journal of Luminescence
出版年:2017
7.
Nucleation mechanism for
epitaxial
growth of aluminum films on sapphire substrates by
molecular
beam
epitaxy
作者:
Yunnong Zhu
a
;
b
;
Wenliang Wang
a
;
b
;
Weijia Yang
a
;
b
;
Haiyan Wang
a
;
b
;
Junning Gao
a
;
b
;
c
;
msjngao@scut.edu.cn" class="auth_mail" title="E-mail the corresponding author
;
Guoqiang Li
a
;
b
;
c
;
msgli@scut.edu.cn" class="auth_mail" title="E-mail the corresponding author
关键词:
Al
epitaxial
films
;
Sapphire substrate
;
Molecular
beam
epitaxy
;
Nucleation mechanism
刊名:Materials Science in Semiconductor Processing
出版年:2016
8.
Molecular
beam
epitaxy deposition of Gd
2
O
3
thin films on SrTiO
3
(100) substrate
作者:
Jinxing Wang
;
wjx@cqu.edu.cn" class="auth_mail" title="E-mail the corresponding author
;
Jinghua Hao
;
Yangyang Zhang
;
Hongmei Wei
;
Juyi Mu
关键词:
Molecular
beam
epitaxy
;
STO
;
Gd2O3 thin film
;
Interface
;
Orientation relation
刊名:Physica E: Low-dimensional Systems and Nanostructures
出版年:2016
9.
Plasma assisted
molecular
beam
epitaxy of Cu
2
O on MgO(001): Influence of copper flux on
epitaxial
orientation
作者:
M. Kracht
;
Max.E.Kracht@materialwiss.uni-giessen.de" class="auth_mail" title="E-mail the corresponding author
;
J. Schö
;
rmann
;
M. Eickhoff
关键词:
A1. Surface structure
;
A1. High resolution X-ray diffraction
;
A3.
Molecular
beam
epitaxy
;
B1. Oxides
;
B2. Semiconducting materials
刊名:Journal of Crystal Growth
出版年:2016
10.
Domains of
molecular
beam
epitaxial
growth of Ga(In)AsBi on GaAs and InP substrates
作者:
Wolfgang Bennarndt
;
wolfgang.bennarndt@wsi.tum.de" class="auth_mail" title="E-mail the corresponding author
;
Gerhard Boehm
;
Markus-Christian Amann
关键词:
A3.
Molecular
beam
epitaxy
;
B1. Alloys
;
B1. Bismuth compounds
;
B2. Semiconducting III&ndash
;
V materials
刊名:Journal of Crystal Growth
出版年:2016
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