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在“
Elsevier电子期刊
”中,
命中:
3,349
条,耗时:小于0.01 秒
在所有数据库中总计命中:
8,680
条
1.
Back-gated InGaAs-on-insulator lateral N
+
NN
+
MOSFET
: Fabrication and typical conduction mechanisms
作者:
H.J. Park
a
;
hyungjin.park@imep.grenoble-inp.fr
;
L. Pirro
a
;
L. Czornomaz
b
;
I. Ionica
a
;
M. Bawedin
a
;
V. Djara
b
;
V. Deshpande
b
;
S. Cristoloveanu
a
关键词:
III&ndash
V ;
InGaAs
;
SOI
;
pseudo-
MOSFET
;
MOSFET
;
Wafer bonding
;
Carrier mobility
;
Strain
;
Selective regrowth
刊名:Solid-State Electronics
出版年:2017
2.
High performance multi-channel
MOSFET
on InGaAs for RF amplifiers
作者:
Manoj Singh Adhikari
;
manoj.space99@gmail.com
;
Yashvir Singh
关键词:
InGaAs
;
MOSFET
;
Transconductance
;
Cut-off frequency
刊名:Superlattices and Microstructures
出版年:2017
3.
Elimination of the channel current effect on the characterization of
MOSFET
threshold voltage using junction capacitance measurements
作者:
Daniel Tomaszewski
a
;
dtomasz@ite.waw.pl
;
Grzegorz Głuszko
a
;
ggluszko@ite.waw.pl
;
Lidia Łukasiak
b
;
l.lukasiak@imio.pw.edu.pl
;
Krzysztof Kucharski
a
;
kucharsk@ite.waw.pl
;
Jolanta Malesińska
a
;
jmales@ite.waw.pl
关键词:
MOSFET
;
CMOS
;
Threshold voltage
;
Junction capacitance
;
Parameter extraction
刊名:Solid-State Electronics
出版年:2017
4.
Modeling and analysis of sub-surface leakage current in nano-
MOSFET
under cutoff regime
作者:
Yashu Swami
;
yashuswami@hotmail.com
;
Sanjeev Rai
srai@mnnit.ac.in
关键词:
Leakage current
;
Sub-surface current
;
Tunneling
;
Nano-
MOSFET
;
Modeling
;
Short channel effects
;
Sub-threshold region
刊名:Superlattices and Microstructures
出版年:2017
5.
Analysis of the reverse recovery oscillation of superjunction
MOSFET
body diode
作者:
Peng Xue
;
demosupen@buaa.edu.cn
;
Guicui Fu
关键词:
Superjunction
;
Power
MOSFET
body diode
;
Reverse recovery oscillation
;
Mixed-mode numerical simulation
;
Plasma extraction transient time oscillation
刊名:Solid-State Electronics
出版年:2017
6.
A review of DC extraction methods for
MOSFET
series resistance and mobility degradation model parameters
作者:
Adelmo Ortiz-Conde
a
;
ortizc@usb.ve
;
Andrea Sucre-Gonzá
;
lez
a
;
Fabiá
;
n Zá
;
rate-Rincó
;
n
b
;
Reydezel Torres-Torres
b
;
Roberto S. Murphy-Arteaga
b
;
Juin J. Liou
c
;
Francisco J. Garcí
;
a-Sá
;
nchez
a
关键词:
MOSFET
model parameter extraction
;
Mobility degradation
;
Parasitic series resistance
刊名:Microelectronics Reliability
出版年:2017
7.
An enhanced
MOSFET
threshold voltage model for the 6-300 K temperature range
作者:
Nguyen Cong Dao
a
;
nguyen.dao@sydney.edu.au
;
Abdallah El Kass
a
;
Mostafa Rahimi Azghadi
a
;
Craig T. Jin
a
;
Jonathan Scott
b
;
Philip H.W. Leong
a
关键词:
Cryogenic electronics
;
Threshold voltage
;
MOSFET
s
刊名:Microelectronics Reliability
出版年:2017
8.
Systematic method for electrical characterization of random telegraph noise in
MOSFET
s
作者:
Carlos Marquez
a
;
carlosmg@ugr.es
;
Noel Rodriguez
a
;
Francisco Gamiz
a
;
Akiko Ohata
b
关键词:
Random telegraph noise
;
MOSFET
reliability
;
Low frequency noise (LFN)
刊名:Solid-State Electronics
出版年:2017
9.
Effect of spacer dielectric engineering on Asymmetric Source Underlapped Double Gate
MOSFET
using Gate Stack
作者:
Ankush Chattopadhyay
b
;
Arpan Dasgupta
b
;
arpan24470367@gmail.com
;
Rahul Das
b
;
Atanu Kundu
a
;
Chandan K. Sarkar
b
关键词:
Source underlap
;
Gate Stack
;
Analog and RF analysis
;
Non Quasi Static
;
Single stage amplifier
刊名:Superlattices and Microstructures
出版年:2017
10.
Superior electrical characteristics of novel nanoscale
MOSFET
with embedded tunnel diode
作者:
Meysam Zareiee
a
;
Ali A. Orouji
b
;
aliaorouji@semnan.ac.ir
关键词:
Metal Oxide Semiconductor Field Effect Transistor
;
Silicon On Insulator
;
Self heating effect
;
Floating body effect
;
Short channel effects
刊名:Superlattices and Microstructures
出版年:2017
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