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内部出版物
CNKI学位论文(429)
知网期刊论文(167)
在“
Elsevier电子期刊
”中,
命中:
85
条,耗时:0.063968 秒
在所有数据库中总计命中:
596
条
1.
A comprehensive analysis of nanoscale single- and
multi
-
gate
MOSFETs
作者:
Rupendra Kumar Sharma
a
;
1
;
rupendra1984@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Charalabos A. Dimitriadis
b
;
Matthias Bucher
a
;
1
;
bucher@electronics.tuc.gr" class="auth_mail" title="E-mail the corresponding author
关键词:
Multi
-
gate
MOSFETs
;
Analog/RF performance
;
Linearity
;
ATLAS device simulator
刊名:Microelectronics Journal
出版年:2016
2.
A novel low specific on-resistance double-
gate
LDMOS with
multi
ple buried p-layers in the drift region based on the Silicon-On-Insulator substrate
作者:
Yinhui Chen
a
;
Shengdong Hu
a
;
b
;
hushengdong@hotmail.com" class="auth_mail" title="E-mail the corresponding author
;
Kun Cheng
a
;
YuYu Jiang
a
;
Jun Luo
b
;
Jian'an Wang
b
;
Fang Tang
a
;
Xichuan Zhou
a
;
Jianlin Zhou
a
;
Ping Gan
a
关键词:
SOI
;
Multi
ple buried p-layers
;
Specific on-resistance
;
Breakdown voltage
;
RESURF
刊名:Superlattices and Microstructures
出版年:2016
3.
A 2D compact model for lightly doped DG
MOSFETs
(P-DGFETs) including negative bias temperature instability (NBTI) and short channel effects (SCEs)
作者:
Omnia Samy
a
;
b
;
Hamdy Abdelhamid
b
;
hamdy.abdelhamid@gmail.com
;
Yehea Ismail
b
;
Abdelhalim Zekry
a
关键词:
Negative bias temperature instability (NBTI)
;
Analytical modeling
;
2D Poisson equation
;
Double-
gate
(DG)
;
Reliability
;
Aging
;
Short channel effects (SCEs)
刊名:Microelectronics Reliability
出版年:2016
4.
Strain effect on mobility in nanowire
MOSFETs
down to 10 nm width: Geometrical effects and piezoresistive model
作者:
J. Pelloux-Prayer
a
;
johan.pelloux-prayer@cea.fr" class="auth_mail" title="E-mail the corresponding author
;
M. Cassé
;
a
;
F. Triozon
a
;
S. Barraud
a
;
Y.-M. Niquet
b
;
J.-L. Rouviè
;
re
b
;
O. Faynot
a
;
G. Reimbold
a
关键词:
Nanowire
;
FDSOI
;
MOSFET
;
MultiGate
;
Strain
刊名:Solid State Electronics
出版年:2016
5.
Impact of the drain and source extensions on nanoscale Double-
Gate
Junctionless MOSFET analog and RF performances
作者:
T. Bentrcia
a
;
F. Djeffal
b
;
c
;
faycal.djeffal@univ-batna.dz" class="auth_mail" title="E-mail the corresponding author
;
faycaldzdz@hotmail.com" class="auth_mail" title="E-mail the corresponding author
;
E. Chebaki
b
;
D. Arar
b
关键词:
DGJ MOSFET
;
Junctionless
;
Source/drain extensions
;
Nanoscale
;
Analog/RF parameters
刊名:Materials Science in Semiconductor Processing
出版年:2016
6.
A review of electrical characterization techniques for ultrathin FDSOI materials and devices
作者:
Sorin Cristoloveanu
;
Maryline Bawedin
;
Irina Ionica
关键词:
Characterization
;
SOI
;
Size effects
;
Ultrathin films
;
Pseudo-MOSFET
;
Parameter extraction
刊名:Solid State Electronics
出版年:2016
7.
Impact of elliptical cross-section on the propagation delay of
multi
-channel
gate
-all-around MOSFET based inverters
作者:
Subindu Kumar
;
Shankaran
;
Jha
关键词:
Metal-oxide-semiconductor field-effect transistor (MOSFET)
;
Gate
-all-around (GAA)
;
Effective diameter
;
Multi
-channel
;
Propagation delay
;
Scaling
刊名:Microelectronics Journal
出版年:2013
8.
An analytical mobility model for square
Gate
-All-Around
MOSFETs
作者:
I.M. Tienda-Luna
;
J.B. Rold谩n
;
F.G. Ruiz
;
C.M. Blanque
;
F. G谩miz
关键词:
SOI
;
Multi
-
gate
devices
;
Silicon GAA MOSFET
;
Mobility model
;
Surface-roughness mobility
;
Phonon mobility
刊名:Solid-State Electronics
出版年:December, 2013
9.
Planar GaAs nanowire tri-
gate
MOSFETs
by vapor-liquid-solid growth
作者:
Chen Zhang
;
Xiuling Li
关键词:
Metalorganic chemical vapor deposition (MOCVD)
;
Metal&ndash
;
oxide&ndash
;
semiconductor field effect transistor (MOSFET)
;
Nanowire
刊名:Solid-State Electronics
出版年:March, 2014
10.
Simulation of low Schottky barrier
MOSFETs
using an improved
Multi
-subband Monte Carlo model
作者:
Valur Gudmundsson
a
;
valur@kth.se
;
Pierpaolo Palestri
b
;
palestri@uniud.it
;
Per-Erik Hellströ
;
m
a
;
pereh@kth.se
;
Luca Selmi
b
;
luca.selmi@uniud.it
;
Mikael Ö
;
stling
a
;
ostling@kth.se
关键词:
Schottky barrier (SB)
;
Metallic source/drain
;
Monte Carlo (MC) method
;
MOSFETs
刊名:Solid-State Electronics
出版年:2013
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