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CNKI学位论文(311)
知网期刊论文(40)
在“
Elsevier电子期刊
”中,
命中:
100
条,耗时:小于0.01 秒
在所有数据库中总计命中:
351
条
1.
Orientation control of intermediate-composition
SiGe
on insulator by low-temperature Al-induced crystallization
作者:
Mitsuki Nakata
a
;
Kaoru Toko
a
;
toko@bk.tsukuba.ac.jp" class="auth_mail" title="E-mail the corresponding author
;
Noriyuki Saitoh
b
;
Noriko Yoshizawa
b
;
Takashi Suemasu
a
关键词:
Polycrystalline
SiGe
;
Thin films
;
Crystal growth
;
Catalysis
;
Sputtering
刊名:Scripta Materialia
出版年:2016
2.
Role of thermal annealing on
SiGe
thin films fabricated by PECVD
作者:
Sudha Joseph
;
sudhajos.iisc@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Nileshi Saraf
;
Adithi Umamaheswara
;
Vijayaraghavan Madakasira
;
Navakanta Bhat
关键词:
SiGe
thin film
;
PECVD
;
Thermal annealing
;
grain size
;
Hardness
;
Strain relaxation
刊名:Materials Science in Semiconductor Processing
出版年:2015
3.
PECVD of poly-
SiGe
/Ge layers with increased total gas flow
作者:
Qiang Wang
;
Andreas G枚hlich
;
Marco Ru脽
;
Pin Yang
;
Holger Vogt
关键词:
PECVD
;
plasma-enhanced chemical vapor deposition
;
NTGF
;
normalised total gas flow
;
defined as NTGF
;
=
;
(total gas flow)/(1364
;
sccm)
刊名:Microelectronic Engineering
出版年:1 March, 2014
4.
Formation of
polycrystalline
thin-film transistors with stacked poly-
SiGe
/poly-Si channel layer for low-voltage applications
作者:
M.H. Juang
a
;
AK80492@mail.ntust.edu.tw
;
C.W. Chang
a
;
Y.S. Peng
a
;
C.C. Hwang
b
;
J.L. Wang
b
;
D.C. Shye
b
关键词:
Thin-film transistor
;
Stacked channel layer
;
Polycrystalline
SiGe
/Si layer
刊名:Thin Solid Films
出版年:2011
5.
Growth of heavily doped monocrystalline and
polycrystalline
SiGe
-based quantum dot superlattices
作者:
David Hauser
a
;
b
;
Guillaume Savelli
a
;
guillaume.savelli@cea.fr
;
Marc Plissonnier
a
;
Laurent Montè
;
s
b
;
Julia Simon
a
关键词:
Silicon&ndash
;
Germanium
;
Chemical vapor-deposition
;
Nanostructures
;
Quantum dot superlattices
;
Thermoelectric materials
刊名:Thin Solid Films
出版年:2012
6.
Submicron-meter
polycrystalline
-
SiGe
thin-film transistors with tunneling field-effect-transistor structure
作者:
M.H. Juang
;
Y.S. Peng
;
J.L. Wang
;
D.C. Shye
;
C.C. Hwang
;
S.L. Jang
关键词:
Polycrystalline
-
SiGe
thin-film transistors
;
Tunneling field-effect-transistor
;
Leakage current
刊名:Solid-State Electronics
出版年:2010
7.
Ultrathin epitaxial Ni-silicide contacts on (1 0 0) Si and
SiGe
: Structural and electrical investigations
作者:
Qing-Tai Zhao
a
;
b
;
q.zhao@fz-juelich.de
;
Lars Knoll
a
;
b
;
Bo Zhang
a
;
b
;
c
;
Dan Buca
a
;
b
;
Jean-Michel Hartmann
d
;
Siegfried Mantl
a
;
b
关键词:
Silicide
;
Epitaxial-NiSi2
;
Schottky barrier
;
Contact resistivity
;
Epitaxial Ni
SiGe
刊名:Microelectronic Engineering
出版年:2013
8.
Characterization of P-channel power trench MOSFETs with
polycrystalline
silicon germanium gate electrode for faster switching
作者:
Rohit Dikshit
;
rohitd80@gmail.com
;
rohit.dixit@fairchildsemi.com
;
Manmohan Daggubati
关键词:
Polycrystalline
silicon&ndash
;
germanium
;
p-MOSFET gate
;
Switching time reduction
;
Gate resistance
;
Boron doping profile
;
Threshold voltage
;
Boron diffusion
刊名:Solid-State Electronics
出版年:2012
9.
Formation of sub-micrometer
polycrystalline
-
SiGe
thin-film transistors by using a thinned channel layer
作者:
Miin-Horng Juang
;
C.W. Chang
;
C.W. Huang
;
J.L. Wang
;
D.C. Shye
;
C.C. Hwang
;
S.L. Jang
关键词:
Sub-micron thin-film transistor
;
Polycrystalline
-
SiGe
;
Channel layer thickness
刊名:Solid-State Electronics
出版年:2010
10.
CMOS compatible
polycrystalline
silicon-germanium based pressure sensors
作者:
Pilar Gonzalez
a
;
b
;
Pilar.Gonzalez@imec.be
;
mp.gonzalezruiz@gmail.com
Author Vitae
;
Bin Guo
a
Author Vitae
;
Michal Rakowski
a
Author Vitae
;
Kristin De Meyer
a
;
b
Author Vitae
;
Ann Witvrouw
a
Author Vitae
关键词:
Poly-
SiGe
;
MEMS monolithic integration
;
Piezoresistivity
;
Capacitive
;
Pressure sensor
;
CMOS
刊名:Sensors and Actuators A: Physical
出版年:2012
1
2
3
4
5
6
7
8
9
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