设为首页
收藏本站
网站地图
|
English
|
公务邮箱
About the library
Background
History
Leadership
Organization
Readers' Guide
Opening Hours
Collections
Help Via Email
Publications
Electronic Information Resources
常用资源
电子图书
期刊论文
学位会议
外文资源
特色专题
内部出版物
中国地质文献-中文(2)
Springer电子图书(1)
CNKI学位论文(44)
万方学位论文(2)
馆藏期刊(1)
万方学术会议(1)
知网期刊论文(146)
在“
Elsevier电子期刊
”中,
命中:
119
条,耗时:小于0.01 秒
在所有数据库中总计命中:
197
条
1.
Study of line-
TFET
analog performance comparing with other TFET and MOSFET architectures
作者:
Paula Ghedini Der Agopian
a
;
b
;
agopian@lsi.usp.br
;
Joã
;
o Antonio Martino
a
;
Anne Vandooren
c
;
Rita Rooyackers
c
;
Eddy Simoen
c
;
Aaron Thean
c
;
Cor Claeys
c
;
d
关键词:
Line-
TFET
;
Intrinsic voltage gain
;
Different device architectures
刊名:Solid-State Electronics
出版年:2017
2.
Gate Drain Underlapped-PNIN-GAA-
TFET
for Comprehensively Upgraded Analog/RF Performance
作者:
Jaya Madan
jayamadan.2012@gmail.com
;
Rishu Chaujar
;
rishu.phy@dce.edu
关键词:
Band to band tunneling (BTBT)
;
Source pocket
;
Gate-drain underlapping (GDU)
;
Parasitic capacitance
;
Tunneling FET (
TFET
)
刊名:Superlattices and Microstructures
出版年:2017
3.
Benchmarks of a III-V
TFET
technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits
作者:
S. Strangio
a
;
seb88str@gmail.com
;
P. Palestri
a
;
M. Lanuzza
b
;
D. Esseni
a
;
F. Crupi
b
;
L. Selmi
a
关键词:
III-V
;
TFET
;
Full adders
;
Ripple carry adders
刊名:Solid-State Electronics
出版年:2017
4.
Design guidelines for GaSb/InAs
TFET
exploiting strain and device size
作者:
Michele Visciarelli
michele.visciarelli2@unibo.it
;
Elena Gnani
;
elena.gnani@unibo.it
;
Antonio Gnudi
;
Susanna Reggiani
;
Giorgio Baccarani
关键词:
Full-quantum simulation
;
Tunnel Field-Effect Transistor (
TFET
)
;
Strain configurations
刊名:Solid-State Electronics
出版年:2017
5.
Performance comparison of single and dual metal dielectrically modulated
TFET
s for the application of label free biosensor
作者:
Madhulika Verma
madhulikaverma@iiitdmj.ac.in
;
Dheeraj Sharma
dheeraj@iiitdmj.ac.in
;
Sunil Pandey
;
sunilpandey@iiitdmj.ac.in
;
Kaushal Nigam
kaushal.nigam@iiitdmj.ac.in
;
P.N. Kondekar
pnkondekar@iiitdmj.ac.in
关键词:
Band to band tunneling (BTBT)
;
Dielectrically modulated
TFET
s
;
Biosensors
;
Technology computer aided design (TCAD)
;
Sensitivity
刊名:Superlattices and Microstructures
出版年:2017
6.
Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors
作者:
Nguyen Dang Chien
a
;
chiennd@dlu.edu.vn
;
Chun-Hsing Shih
b
关键词:
Source doping effects
;
EOT scaling
;
Band-to-band tunneling
;
Tunnel field-effect transistor
;
Low-bandgap
TFET
刊名:Superlattices and Microstructures
出版年:2017
7.
Influence of Germanium source on dopingless tunnel-FET for improved analog/RF performance
作者:
Kanchan Cecil
;
c.kanchan@iiitdmj.ac.in
;
Jawar Singh
jawar@iiitdmj.ac.in
关键词:
Tunnel field effect transistor (
TFET
s)
;
Band-to-band tunneling (BTBT)
;
Charge plasma
;
Band gap engineering
;
Germanium (Ge)
;
Analog FOMs
;
RF FOMs
;
TCAD
刊名:Superlattices and Microstructures
出版年:2017
8.
A novel self-aligned charge plasma Schottky barrier tunnel FET using work function engineering
作者:
Sangeeta Singh
a
;
sangeeta.singh@iiitdmj.ac.in
;
Arun Pratap Singh
b
;
P.N. Kondekar
a
关键词:
Schottky barrier tunnel FET (SB-
TFET
)
;
Charge plasma
;
Work-function engineering
;
Sub-threshold slope (SS)
;
Drain induced barrier lowering (DIBL)
;
Random dopant fluctuations (RDFs)
刊名:Microelectronic Engineering
出版年:2017
9.
Study of novel junctionless Ge n-Tunneling Field-Effect Transistors with lightly doped drain (LDD) region
作者:
Xiangyu Liu
;
Huiyong Hu
;
18595580989@163.com
;
Bin Wang
;
Meng Wang
;
Genquan Han
;
Shimin Cui
;
Heming Zhang
关键词:
Junctionless Ge n-
TFET
;
LDD region
;
GIDL
;
Sloped gate oxide structure
刊名:Superlattices and Microstructures
出版年:2017
10.
Experimental demonstration of strained Si nanowire GAA n-
TFET
s and inverter operation with complementary TFET logic at low supply voltages
作者:
G.V. Luong
a
;
g.luong@fz-juelich.de" class="auth_mail" title="E-mail the corresponding author
;
S. Strangio
b
;
A. Tiedemannn
a
;
S. Lenk
a
;
S. Trellenkamp
a
;
K.K. Bourdelle
c
;
Q.T. Zhao
a
;
q.zhao@fz-juelich.de" class="auth_mail" title="E-mail the corresponding author
;
S. Mantl
a
关键词:
Si nanowire
TFET
;
Analog performance
;
Gate-all-around
;
Inverter
;
C-
TFET
;
Subthreshold slope
刊名:Solid State Electronics
出版年:2016
1
2
3
4
5
6
7
8
9
按检索点细分(119)
题名(30)
关键词(48)
文摘(103)
按出版年细分(119)
2027年及以后(10)
2017年(9)
2016年(43)
2015年(9)
2013年(10)
2012年(12)
2011年(5)
2010年(3)
2009年(3)
2008年(3)
2006年(1)
2004年(4)
2003年(2)
2002年(1)
2001年(1)
2000年及以前(3)
NGLC 2004-2010.National Geological Library of China All Rights Reserved.
Add:29 Xueyuan Rd,Haidian District,Beijing,PRC. Mail Add: 8324 mailbox 100083
For exchange or info please contact us via
email
.