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在“Elsevier电子期刊”中，命中：1,169条，耗时：0.0349867 秒

在所有数据库中总计命中：6,927条

1.Improvements on thermal stability of graphene and top gate graphene transistors by Ar annealing

作者：Bo Liu^a ; In-Shiang Chiu^a ; Chao-Sung Lai^a ; ^b ; ^c ; ^d ; ^{cslai@mail.cgu.edu.tw}

关键词：Graphene ; Thermal stability ; Raman spectrum ; Graphene transistors ; High mobility ; Low defects

刊名：Vacuum

出版年：2017

2.PCM based heat sinks of paraffin/nanoplatelet graphite composite for thermal management of IGBT

作者：Tien-Chan Chang^a ; Shyong Lee^b ; Yiin-Kuen Fuh^b ; ^{mikefuh@ncu.edu.tw} ; Ya-Chi Peng^c ; Zhi-Yu Lin^c

关键词：Paraffin ; Graphite nanoplatelets (GNPs) ; Insulated gate bipolar transistors (IGBT) ; Thermal conductivity enhancement (TCE) ; Differential scanning calorimeter (DSC) ; Scanning electron microscopy (SEM)

刊名：Applied Thermal Engineering

出版年：2017

3.High temperature storage test and its effect on the thermal stability and electrical characteristics of AlGaN/GaN high electron mobility transistors

作者：Jong-Min Lee ; ^{leejongmin@etri.re.kr} ; Byoung-Gue Min ; Cheol-Won Ju ; Ho-Kyun Ahn ; Jong-Won Lim

关键词：AlGaN/GaN ; HEMT ; High temperature storage ; Reliability ; Gate contact

刊名：Current Applied Physics

出版年：2017

4.Gate leakage currents induced by thermal fluctuation on two-dimensional electron gas in AlGaN/GaN high-electron-mobility transistors

作者：Jian Peng^a ; Xiwen Liu^a ; Dong Ji^b ; Yanwu Lu^a ; ^{ywlu@bjtu.edu.cn}

关键词：Nitride semiconductor ; Heterostructure ; Two-dimensional electron gas ; Leakage current

刊名：Thin Solid Films

出版年：2017

5.Thermal characteristics of a microscopic model of thermal transistor

作者：M.G. Vachhani^a ; ^b ; ^{mgv5974@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Tarika K. Patel^b ; ^{tarikapatel1987@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; P.N. Gajjar^b ; ^{pngajjar@rediffmail.com" class="auth_mail" title="E-mail the corresponding author}

关键词：Thermal transistor ; Nano scale heat transport ; Thermal output characteristics ; Thermal transfer characteristics ; Non-equilibrium molecular dynamics simulation

刊名：International Journal of Thermal Sciences

出版年：2016

6.Development of a novel micro w-EDM power source with a multiple Resistor-Capacitor (mRC) relaxation circuit for machining high-melting point, -hardness and -resistance materials

作者：Shun-Tong Chen ; ^{chenst@ntnu.edu.tw" class="auth_mail" title="E-mail the corresponding author} ; ^{chenst@ntu.edu.tw" class="auth_mail" title="E-mail the corresponding author} (Professor) ; Chi-Hung Chen (Graduate student)

关键词：Multiple Resistor-Capacitor (mRC) ; Spark erosion rate (SER) ; Electro-thermal machinability (ETM) ; Cutting performance (CP) ; High-melting point ; -hardness and -resistance materials

刊名：Journal of Materials Processing Technology

出版年：2017

7.Monte-Carlo parallel simulation of phonon transport for 3D silicon nano-devices

作者：Zahra Shomali^a ; Behrad Pedar^a ; Jafar Ghazanfarian^b ; ^{j.ghazanfarian@znu.ac.ir} ; Abbas Abbassi^a

关键词：Monte-Carlo ; Nanoscale ; MOS devices ; Phonon transport ; Boltzmann equation

刊名：International Journal of Thermal Sciences

出版年：2017

8.Radiation and annealing effects on integrated bipolar Operational Amplifier

作者：J. Assaf ^{pscientific@aec.org.sy}

关键词：Radiation effect ; Operational Amplifier ; Frequency response ; Thermal annealing

刊名：Radiation Physics and Chemistry

出版年：2017

9.Experimental DC extraction of the thermal resistance of bipolar transistors taking into account the Early effect

刊名：Solid-State Electronics

出版年：2017

10.Ambient effect on thermal stability of amorphous InGaZnO thin film transistors

作者：Jianeng Xu ; Qi Wu ; Ling Xu ; Haiting Xie ; Guochao Liu ; Lei Zhang ; Chengyuan Dong ; ^{cydong@sjtu.edu.cn" class="auth_mail" title="E-mail the corresponding author}

关键词：Amorphous InGaZnO (a-IGZO) ; Thin film transistor (TFT) ; Thermal stability ; Ambient gas

刊名：Solid State Electronics

出版年：2016

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