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Springer电子图书(1)
CNKI学位论文(36)
知网期刊论文(28)
在“
Elsevier电子期刊
”中,
命中:
86
条,耗时:0.0439486 秒
在所有数据库中总计命中:
65
条
1.
Experimental observation of
TDDB
-like behavior in reverse-biased green InGaN LEDs
作者:
M. Buffolo
;
matteo.buffolo@dei.unipd.it" class="auth_mail" title="E-mail the corresponding author
;
M. Meneghini
;
matteo.meneghini@dei.unipd.it" class="auth_mail" title="E-mail the corresponding author
;
C. De Santi
;
H. Felber
;
N. Renso
;
G. Meneghesso
;
E. Zanoni
关键词:
LED
;
Time
-
dependent
dielectric
breakdown
;
GaN
;
Reliability
刊名:Microelectronics Reliability
出版年:2016
2.
Processor-level reliability simulator for
time
-
dependent
gate
dielectric
breakdown
作者:
Chang-Chih ChenAuthor Vitae
;
Taizhi LiuAuthor Vitae
;
Soonyoung ChaAuthor Vitae
;
Linda Milor
;
linda.milor@ece.gatech.edu" class="auth_mail" title="E-mail the corresponding author
Author Vitae
关键词:
Microprocessor
;
Modeling
;
Timing analysis
;
Cache
;
Gate oxide
breakdown
;
Time
-
dependent
dielectric
breakdown
刊名:Microprocessors and Microsystems
出版年:2015
3.
Trapping and Detrapping Effects on Current Conduction Mechanisms at Interface of Au/HfO
2
High-k Films
作者:
Zhang Yuqian
;
20742232@qq.com" class="auth_mail" title="E-mail the corresponding author
;
Fu Li
关键词:
Schottky emission
;
Poole-Frenkel mechanism
;
reliability
刊名:Rare Metal Materials and Engineering
出版年:2015
4.
Electron fluence driven, Cu catalyzed, interface
breakdown
mechanism for BEOL low-k
time
dependent
dielectric
breakdown
作者:
Fen Chen
;
chenfe@us.ibm.com" class="auth_mail
;
Michael A. Shinosky
刊名:Microelectronics Reliability
出版年:March, 2014
5.
Time
dependent
dielectric
breakdown
(
TDDB
) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate
dielectric
s
作者:
H.W. Hsu
;
H.S. Huang
;
H.W. Chen
;
C.P. Cheng
;
K.C. Lin
;
S.Y. Chen
;
M.C. Wang
;
C.H. Liu
关键词:
HfLaO
;
HfZrLaO
;
Time
dependent
dielectric
breakdown
(
TDDB
)
;
Life
time
刊名:Solid-State Electronics
出版年:2012
6.
Time
-
dependent
-
dielectric
-
breakdown
characteristics of Hf-doped Ta
2
O
5
/SiO
2
stack
作者:
E. Atanassova
;
N. Novkovski
;
D. Spassov
;
A. Paskaleva
;
A. Skeparovski
刊名:Microelectronics Reliability
出版年:February, 2014
7.
Comprehensive
TDDB
life
time
prediction methodology for intrinsic and extrinsic failures in Cu interconnect
dielectric
s
作者:
N. Suzumura
;
naohito.suzumura.zn@renesas.com
;
M. Ogasawara
;
K. Makabe
;
T. Kamoshima
;
T. Ouchi
;
T. Furusawa
;
E. Murakami
关键词:
Time
-
dependent
dielectric
breakdown
(
TDDB
)
;
Life
time
prediction
;
Cu/low-k
;
Field acceleration model
;
Thinning model
;
Critical area analysis (CAA)
刊名:Microelectronic Engineering
出版年:2013
8.
Evaluations of intrinsic
time
dependent
dielectric
breakdown
of
dielectric
copper diffusion barriers
作者:
Larry Zhao
;
;
1
;
;
a
;
;
larryzhao78749@yahoo.com
;
Melina Lofrano
a
;
Kristof Croes
a
;
Els Van Besien
a
;
Zsolt Tő
;
kei
a
;
Christopher J. Wilson
a
;
Robin Degraeve
a
;
Thomas Kauerauf
a
;
Gerald P. Beyer
a
;
Cor Claeys
1
;
;
a
关键词:
Time
-
dependent
dielectric
breakdown
;
Dielectric
barriers
;
Breakdown
;
Copper interconnects
;
SiCN
;
BN
刊名:Thin Solid Films
出版年:2011
9.
Time
-
dependent
dielectric
breakdown
(
TDDB
) distribution in n-MOSFET with HfSiON gate
dielectric
s under DC and AC stressing
作者:
Izumi Hirano
;
Yasushi Nakasaki
;
Shigeto Fukatsu
;
Masakazu Goto
;
Koji Nagatomo
;
Seiji Inumiya
;
Katsuyuki Sekine
;
Yuichiro Mitani
;
Kikuo Yamabe
刊名:Microelectronics Reliability
出版年:December, 2013
10.
Study of preferential localized degradation and
breakdown
of HfO
2
/SiO
x
dielectric
stacks at grain boundary sites of polycrystalline HfO
2
dielectric
s
作者:
Kalya Shubhakar
a
;
b
;
c
;
shub0002@ntu.edu.sg
;
Kin Leong Pey
b
;
Nagarajan Raghavan
a
;
Sunil Singh Kushvaha
c
;
Michel Bosman
c
;
Zhongrui Wang
a
;
Sean Joseph O&rsquo
;
Shea
c
关键词:
High-K
;
Grain boundary
;
Dielectric
Breakdown
;
Conductive-AFM
刊名:Microelectronic Engineering
出版年:2013
1
2
3
4
5
6
7
8
9
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